GUO40-12NO1
3~ Rectifier Bridge
Standard Rectifier
-
~ +~ ~
Part number
GUO40-12NO1
Backside: isolated
Features / Ad vantages: Applications: Package:
● Low forward voltage drop
● Planar passivated chips
● Easy to mount with one screw
● Space and weight savings
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
GUFP
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Base plate: Plastic overmolded tab
● Reduced weight
● Isolation Voltage: V~
2500
RRM
1200
I40
FSM
370
DAV
V=V
A
A
=
=
I
3~
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20131108cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
GUO40-12NO1
V = V
A²s
A²s
A²s
A²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.06
R4.3 K/W
R
min.
40
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
90
P
tot
35 WT = 25°C
C
RK/W
10
1200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.28
T = 25°C
VJ
150
V
F0
V0.74T = °C
VJ
175
r
F
16.3 mΩ
V0.92T = °C
VJ
I = A
F
V
10
1.23
I = A
F
30
I = A
F
30
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V1200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
10
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
370
400
495
480
A
A
A
A
315
340
685
665
1200
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20131108cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
GUO40-12NO1
R
thJA
thermal resistance junction to ambient
K/W
50
Ratings
DMA40U1800GU GUFP 1800
Package
T
op
°C
M
D
Nm1.2
mounting torque
0.8
T
VJ
°C175
virt ua l j un ctio n temp eratu re
-40
Weight g8.5
Symbol Definition typ. max.min.
Conditions
operation temperature
Unit
F
C
N120
mount ing for ce w i th cli p
20
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.7 5.4
10.0 8.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
70 A
per terminal
150-40
terminal to terminal
GUO40-16NO1
GUO40-08NO1
GUFP
GUFP
1600
800
GUFP
Similar Part Package Voltage class
DNA40U2200GU GUFP 2200
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
GUO40-12NO1 514892Tube 14GUO40-12NO1Standard
2080
2500
ISOL
T
stg
°C150
storage temperature
-40
threshold voltage
V0.74
mΩ
V
0 max
R
0 max
slope resistance *
13.7
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131108cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
GUO40-12NO1
_
~~~+
S2
Y2
Y1
X1
X2
A2
C
A3
A4
A5
A6
A
E
F
4x e
e
Z2
Z1
5x b
5x b2
L1
+1
+2
S1
Q
DL
R
ØP
O
min typ. max min typ. max
A 5.40 5.50 5.60 0.213 0.217 0.221
A2 3.90 4.00 4.10 0.154 0.158 0.162
A3 0.95 1.00 1.10 0.037 0.039 0.043
A4 0.95 1.00 1.05 0.037 0.039 0.041
A5 1.60 1.70 1.80 0.063 0.067 0.071
A6 1.25 1.30 1.35 0.049 0.051 0.053
b 0.95 1.00 1.05 0.037 0.039 0.041
b2 1.95 2.00 2.05 0.077 0.079 0.081
C 0.45 0.50 0.55 0.018 0.020 0.022
D 24.80 25.00 25.20 0.977 0.985 0.993
E 34.70 35.00 35.30 1.367 1.379 1.391
e BSC 7.50 BSC 0.296
F 2.40 2.50 2.60 0.095 0.099 0.102
L 20.30 20.40 20.50 0.800 0.804 0.808
L1 3.70 3.75 3.80 0.146 0.148 0.150
O 17.40 17.50 17.60 0.686 0.690 0.693
Ø P 4.10 4.20 4.30 0.162 0.165 0.169
Q 9.20 9.30 9.40 0.362 0.366 0.370
Ø
/
2
R
1.77 0.070
s1 3.45 3.50 3.55 0.136 0.138 0.140
s2 1.45 1.50 1.55 0.057 0.059 0.061
t1 0.95 1.00 1.05 0.037 0.039 0.041
t2 0.95 1.00 1.05 0.037 0.039 0.041
x1 3.20 3.30 3.40 0.126 0.130 0.134
x2 1.90 2.00 2.10 0.075 0.079 0.083
y1 1.60 1.65 1.70 0.063 0.065 0.067
y2 4.65 4.70 4.75 0.183 0.185 0.187
z1 2.80 2.90 3.00 0.110 0.114 0.118
Dim. Millimeter Inches
-
~ +~ ~
Outlines GUFP
IXYS reserves the right to change limits, conditions and dimensions. 20131108cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
GUO40-12NO1
011
0
200
400
600
800
V
F
[V]
I
F
[A]
0.4 0.8 1.2 1.6
0
20
40
60
10
-3
10
-2
10
-1
10
0
150
200
250
300
1 10 100 1000 10000
0
1
2
3
4
5
0 2550751001251501750481216
0
4
8
12
16
20
0 25 50 75 100 125 150 175
0
10
20
30
40
I
FSM
[A]
t[s] t[ms]
I
2
t
[A
2
s]
P
tot
[W]
I
F(AV)M
[A] T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t[ms]
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 0.302 0.002
2 1.252 0.032
3 1.582 0.227
4 1.164 0.820
0.8 x V
RRM
50 Hz
T
VJ
=45°C
V
R
=0 V
R
thJA
:
0.6 KW
0.8 KW
1KW
2KW
4KW
8KW
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C T
VJ
=25°C
T
VJ
=150°C T
VJ
=150°C
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=45°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20131108cData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
