28C1213A(K) Silicon NPN Epitaxial HITACHI Application e Low frequency amplifier Medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3102SC1213A (K) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage Veo 50 Vv Collector to emitter voltage Veco 50 Vv Emitter to base voltage Veso 4 Vv Collector current l, 500 mA Collector power dissipation P. 400 - mw : Junction temperature Tj 150 - 8G Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) item Symbol Min Typ Max Unit Test conditions Collector to base breakdown = Vigayczg = 0 Vv 1, = 10 nA, 1, =0 voltage Collector to emitter breakdown Vegaceo 50 _ _ Vv I, = 1.0 mA, Ro = voltage Emitter to base breakdown Vieneso | 4 Vv I-=10yA,1,=0 voltage Collector cutoff current logo 0.5 pA Vog= 20 V, 1. =0 DC current transfer ratio hee* 60 _ 320 Voe@ 3 V, 1, = 10 mA Nee 10 _ Voe= 3 V, I, = 500 mA? Base to emitter voltage Vag 0.64 _ Vv Voe= 3 V, i, = 10mA Collector to emitter saturation Vegr.ay _ 0.12 0.6 V Ig = 150 mA, |, = 15 mA voltage Base to emitter satruation Vesercat) 0.83 1.2 Vv I, = 150 mA, I, = 15 mA voltage Collector output capacitance Cob 7.0 pF Veg = 10 V, 1. = 0, f = 1 MHz Gain bandwidth product f, _ 120 _ MHz Voe= 3 V, I, = 10mA Turn on time ton 0.25 us Voc = 10.3 V I, = 101,,=-10 1, =10mA Turn off time ton 0.85 us Storage time tag 0.4 us Vee = 5 V 1, = 15, = lps = 20 MA Notes: 1. The 2SC1213A(K) is grouped by h,, as follows. 2. Pulse test B Cc D 60 to 120 100 to 200 160 to 320 HITACHI 31]2SC1213A (K) Switching Time Test Circuit tons tow Test Circuit D. UT. r> CRT 6k A ee z1k =6 #50 | 0.002 | 0.002 P.G. Sot t, << 15 ns ove 50 | 50 703 PW 2 5 ys aR - duty ratio < 10% nee Response Waveform Switching Time Test Circuit tog Test Circuit D.U.T. +e CRT 1,0 216 TAS = 240 #200 2100 P.G. 0.002 | 0.002 t.<5ns & | ty PW 25 us 7Vvz 50 50 =5y duty ratio < 2% I oe | unitR-@ Cc: Response Waveform O 10% Input 9V Output 0 10% +t t stg Typical Output Characteristics (1) 500 20 = Maximum Collector Dissipation Curve i 8 500 =< 400 6 ~ E 5 oO a 9 4 400 = 5 NX ~ 300 3 = a Na = a 300 a 3 N ~ 200 a MN, - 200 oO 8 N 2 C= 40g f XN S 100 my ~ 100 3 3 lg = 0 S 0 50 100 150 0 1 2 3 4 5 Ambient Temperature Ta (C) Collector to Emitter Voltage Voge (V) HITACHI 312Collector Current lego (NA) Typical Output Characteristics (2) 100 30 0.9 _ 0. = 80 = 10 ad 2 60 < & 5 > 40 2 s s SC oO 2 2 10 S 20 8 100 30 10 1.0 0.3 0.1 0.03 lp = 0 0 10 20 30 40 Collector to Emitter Voltage Vee (V) Collector Cutoff Current vs. Collector to Base Voltage 1 0 10 20 30 40 50 Collector to Base Voltage Veg [V) Q2 P =q 01 mA t= 400 my 50 DC Current Transfer Ratio hee 0.3 140 _ nN oO 100 we oO oD oO aa oO nN oO Oo 0 2SC1213A (K) Typical Transfer Characteristics Vog =3V 02 04 06 O08 10 12 Base to Emitter Voltage Vee (V) DC Current Transfer Ratio vs. Collector Current Voge =3V 5 10 20 50 100 200 500 Collector Current Ig (mA) HITACHI2SC1213A (K) 314 Collector to Emitter Saturation Voltage Vee;sary (V) Collector Output Capacitance C,, (pF) Emitter input Capacitance Cj), (pF) 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 0.1 0.3 70 60 50 40 30 20 10 Collector to Emitter Saturation Voliage vs. Collector Current =1 Base to Emitter Saturation Voitage Vge;sat (V) 1.0 3 10 30 100 300 1,000 Collector Current Ic (mA) Input And Output Capacitance vs. Voltage = 1 MHz Cc Ie = 0) Gain Bandwidth Product f; (MHz) 0 0.1 a3 1.0 3 10 Collector to Base Voltage Vcg (V)} Emitter to Base Voltage Veg (V) 30 HITACHI Base to Emitter Saturation Voltage vs. Collector Current 1.1 =10 Ip Pulse 1.0 0.9 0.8 0.7 0.6 0.5 {a7 0.4 0.102 0510 2 5 10 20 50 100200 500 Collector Current Ic (mA) Gain Bandwidth Product vs. Collector Current 280 240 200 160 120 80 40 2 5 10 20 Collector Current Ie (mA) 50 100 200 5002SC1213A (K) Switching Time t (ns) 1,000 500 200 100 50 20 10 5 Switching Time vs. Collector Current Vec = 10.3 Vv lo = 10 Ig, = 10 Ips 10 20 50 100 200 500 Collector Current I, (mA) HITACHI 315