
4-84
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFR9120, IRFU9120 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS -100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR -100 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS ±20 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 5.6
Refer to Peak Current Curve A
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
0.33 W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V -100 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA -2.0 - -4.0 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - -25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 150oC - - -250 µA
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source on Resistance (Note 2) rDS(ON) ID = 3.4A, VGS = -10V, (Figure 9) - - 0.600 W
Turn-On Time tON VDD = -50V, ID = 6.8A, RL = 7.1Ω,
VGS = -10V, RGS =18Ω
(Figures 13, 16, 17)
- - 60 ns
Turn-On Delay Time td(ON) - 9.6 - ns
Rise Time tr-29 - ns
Turn-Off Delay Time td(OFF) -21 - ns
Fall Time tf-25 - ns
Turn-Off Time tOFF - - 60 ns
Total Gate Charge QgVGS = 0V to -10V VDD = -80V,
ID = 5.6A,
RL = 14.3Ω
IG(REF) = 1.0mA
- - 18 nC
Gate to Drain Charge Qgd --9nC
Gate to Source Charge Qgs --3nC
Input Capacitance CISS VDS = -25V, VGS = 0V, f = 1MHz - 485 - pF
Output Capacitance COSS - 170 - pF
Reverse Transfer Capacitance CRSS -45 - pF
Thermal Resistance Junction to Case RθJC - - 3.00 oC/W
Thermal Resistance Junction to Ambient RθJA - - 100 oC/W
Source to Drain Diode Ratings and Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) VSD ISD = -5.6A - - -6.3 V
Reverse Recovery Time trr ISD = -6.8A, dISD/dt = -100A/µs - 130 150 ns
Reverse Recovery Charge QRR - 0.70 1.4 µC
NOTES:
2. Pulse test: pulse width ≤300µs, duty cycle ≤2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)
IRFR9120, IRFU9120