Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
250
April 15, 1992 853-0911 06456
DESCRIPTION
The NE592 is a monolithic, two-stage, differential output, wideband
video amplifier. It offers fixed gains of 100 and 400 without external
components and adjustable gains from 400 to 0 with one external
resistor. The input stage has been designed so that with the addition
of a few external reactive elements between the gain select
terminals, the circuit can function as a high-pass, low-pass, or
band-pass filter. This feature makes the circuit ideal for use as a
video or pulse amplifier in communications, magnetic memories,
display, video recorder systems, and floppy disk head amplifiers.
Now available in an 8-pin version with fixed gain of 400 without
external components and adjustable gain from 400 to 0 with one
external resistor.
FEATURES
•120MHz unity gain bandwidth
•Adjustable gains from 0 to 400
•Adjustable pass band
•No frequency compensation required
•Wave shaping with minimal external components
•MIL-STD processing available
PIN CONFIGURATIONS
1
2
3
4 5
6
7
8
1
2
3
4
5
6
7 8
14
13
12
11
10
9
INPUT 1
NC
G2A GAIN SELECT
G1A GAIN SELECT
V+
NC
OUTPUT 1
INPUT 2
NC
G2B GAIN SELECT
G1B GAIN SELECT
V-
NC
OUTPUT 2
INPUT 2
V-
OUTPUT 2
INPUT 1
V+
OUTPUT 1
G1A GAIN SELECTG1B GAIN SELECT
D, N Packages
TOP VIEW
D, N Packages
TOP VIEW
APPLICATIONS
•Floppy disk head amplifier
•Video amplifier
•Pulse amplifier in communications
•Magnetic memory
•Video recorder systems
BLOCK DIAGRAM
+V
Q6
OUTPUT 1
OUTPUT 2
R1 R2 R8 R10 R9
Q5
Q4 Q3
R11
R12
Q11
Q10
R13 R14R16R15R7BR7A
Q7B Q8 Q9
Q7A
G2A
G1A
INPUT 1 INPUT 2
R3 R5
G1B
G2B
Q1 Q2
-V
Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
April 15, 1992 251
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
14-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE592N14 0405B
14-Pin Small Outline (SO) package 0 to +70°C NE592D14 0175D
8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE592N8 0404B
8-Pin Small Outline (SO) package 0 to +70°C NE592D8 0174C
NOTES:
N8, N14, D8 and D14 package parts also available in “High” gain version by adding “H” before
package designation, i.e., NE592HDB
ABSOLUTE MAXIMUM RATINGS
TA=+25°C, unless otherwise specified.
SYMBOL PARAMETER RATING UNIT
VCC Supply voltage ±8 V
VIN Differential input voltage ±5 V
VCM Common-mode input voltage ±6 V
IOUT Output current 10 mA
TAOperating ambient temperature range 0 to +70 °C
TSTG Storage temperature range -65 to +150 °C
PD MAX Maximum power dissipation,
TA=25°C (still air)1
D-14 package 0.98 W
D-8 package 0.79 W
N-14 package 1.44 W
N-8 package 1.17 W
NOTES:
1. Derate above 25°C at the following rates:
D-14 package at 7.8mW/°C
D-8 package at 6.3mW/°C
N-14 package at 11.5mW/°C
N-8 package at 9.3mW/°C
Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
April 15, 1992 252
DC ELECTRICAL CHARACTERISTICS
TA=+25°C VSS=±6V, VCM=0, unless otherwise specified. Recommended operating supply voltages VS=±6.0V. All specifications apply to both
standard and high gain parts unless noted differently.
SYMBOL
PARAMETER
TEST CONDITIONS
NE592
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max
UNIT
AVOL Differential voltage gain,
standard part
Gain 11RL=2kΩ, VOUT=3VP-P 250 400 600 V/V
Gain 22, 480 100 120 V/V
RIN Input resistance
Gain 114.0 kΩ
Gain 22, 410 30 kΩ
CIN Input capacitance2Gain 242.0 pF
IOS Input offset current 0.4 5.0 µA
IBIAS Input bias current 9.0 30 µA
VNOISE Input noise voltage BW 1kHz to 10MHz 12 µVRMS
VIN Input voltage range ±1.0 V
CMRR Common-mode rejection ratio
Gain 24VCM±1V, f<100kHz 60 86 dB
Gain 24VCM±1V, f=5MHz 60 dB
PSRR Supply voltage rejection ratio
Gain 24∆VS=±0.5V 50 70 dB
VOS Output offset voltage
Gain 1 RL=∞1.5 V
Gain 24RL=∞1.5 V
Gain 33RL=∞0.35 0.75 V
VCM Output common-mode voltage RL=∞2.4 2.9 3.4 V
VOUT Output voltage swing RL=2kΩ3.0 4.0 V
differential
ROUT Output resistance 20 Ω
ICC Power supply current RL=∞18 24 mA
NOTES:
1. Gain select Pins G1A and G1B connected together.
2. Gain select Pins G2A and G2B connected together.
3. All gain select pins open.
4. Applies to 14-pin version only.
Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
April 15, 1992 253
DC ELECTRICAL CHARACTERISTICS
DC Electrical CharacteristicsVSS=±6V, VCM=0, 0°C ≤TA≤70°C, unless otherwise specified. Recommended operating supply voltages VS=±6.0V.
All specifications apply to both standard and high gain parts unless noted differently.
SYMBOL
PARAMETER
TEST CONDITIONS
NE592
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max
UNIT
AVOL Differential voltage gain,
standard part
Gain 11RL=2kΩ, VOUT=3VP-P 250 600 V/V
Gain 22, 480 120 V/V
RIN Input resistance
Gain 22, 48.0 kΩ
IOS Input offset current 6.0 µA
IBIAS Input bias current 40 µA
VIN Input voltage range ±1.0 V
CMRR Common-mode rejection ratio
Gain 24VCM±1V, f<100kHz 50 dB
PSRR Supply voltage rejection ratio
Gain 24∆VS=±0.5V 50 dB
VOS
Output offset voltageGain 1
Gain 24
Gain 33
RL=∞1.5
1.5
1.0
V
VOUT Output voltage swing differential RL=2kΩ2.8 V
ICC Power supply current RL=∞27 mA
NOTES:
1. Gain select Pins G1A and G1B connected together.
2. Gain select Pins G2A and G2B connected together.
3. All gain select pins open.
4. Applies to 14-pin versions only.
AC ELECTRICAL CHARACTERISTICS
TA=+25°C VSS=±6V, VCM=0, unless otherwise specified. Recommended operating supply voltages VS=±6.0V. All specifications apply to both
standard and high gain parts unless noted differently.
SYMBOL PARAMETER TEST CONDITIONS NE/SA592 UNIT
Min Typ Max
BW Bandwidth Gain 11
Gain 22, 440
90 MHz
MHz
tR
Rise time Gain 11
Gain 22, 4VOUT=1VP-P 10.5
4.5 12 ns
ns
tPD
Propagation delay Gain 11
Gain 22, 4VOUT=1VP-P 7.5
6.0 10 ns
ns
NOTES:
1. Gain select Pins G1A and G1B connected together.
2. Gain select Pins G2A and G2B connected together.
3. All gain select pins open.
4. Applies to 14-pin versions only.
Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
April 15, 1992 254
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 70oC
Tamb = 0oC
COMMON-MODE REJECTION RATIO – dB
OUTPUT VOLTAGE – V
OUTPUT VOLTAGE – V
SINGLE ENDED VOLTAGE GAIN – dB
RELATIVE VOLTAGE GAIN
RELATIVE VOLTAGE GAIN OUTPUT VOLTAGE – V
OUTPUT VOLTAGE SWING – Vpp
Common-Mode Rejection Ratio
as a Function of Frequency Output Voltage Swing as
a Function of Frequency Pulse Response
Supply Current as a
Function of Temperature Pulse Response as a
Function of Supply Voltage Pulse Response as a
Function of Temperature
Voltage Gain as a
Function of Temperature Gain vs. Frequency as a
Function of Temperature Voltage Gain as a
Function of Supply Voltage
100
90
80
70
60
50
40
30
20
10
010k 100k 1M 10M 100M
7.0
6.0
5.0
4.0
3.0
2.0
1.0
01 5 10 50 100 5001000
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-0.2
-0.4-15 -10 -5 0 5 10 15 20 25 30 35
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-0.2
-0.4-15 -10 -5 0 5 10 15 20 25 30 35
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-0.2
-0.4 -15 -10 -5 0 5 10 15 20 25 30 35
1.10
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90 0 10 20 30 40 50 60 70
60
50
40
30
20
10
0
-10 1 5 10 50 100 500 1000
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4 3 4 5 6 7 8
FREQUENCY – Hz FREQUENCY – MHz TIME – ns
TIME – ns TIME – ns
FREQUENCY – MHz SUPPLY VOLTAGE – +VTEMPERATURE – oC
GAIN 2
VS = +6V
TA = 25oC
VS = +6V
TA = 25oC
RL = 1kΩ
VS = +6V
TA = 25oC
RL = 1k
GAIN 2
TA = 25oC
RL = 1kΩ
GAIN 2
VS = +6V
RL = 1kΩ
VS = +6V GAIN 2
VS = +6V
RL = 1kΩ
Tamb = 25oC
GAIN 2
GAIN 1
VS = +8V
VS = +3V
VS = +6V
TA = 25oC
GAIN 2
GAIN 1 TA = 125oC
TA = –55oC
TA = 25oC
GAIN 2
GAIN 1
SUPPLY CURRENT – mA
28
24
20
16
12
83 4 5 6 7 8
SUPPLY VOLTAGE – +V
TA = 25oC
Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
April 15, 1992 255
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
SINGLE ENDED VOLTAGE GAIN – dB
DIFFERENTIAL VOLTAGE GAIN – V/V
SUPPLY CURRENT – mA
OUTPUT VOLTAGE SWING – V OR
OUTPUT SINK CURRENT – mA
OUTPUT VOLTAGE SWING – Vpp
INPUT RESISTANCE – K
INPUT NOISE VOLTAGE – Vrms
Gain vs. Frequency as a
Function of Supply Voltage Voltage Gain
Adjust Circuit Voltage Gain as a
Function of RADJ (Figure 3)
Supply Current as a
Function of Temperature Differential Overdrive
Recovery Time
Output Voltage and Current
Swing as a Function of
Supply Voltage
Output Voltage Swing as a
Function of Load Resistance Input Resistance as a
Function of Temperature Input Noise Voltage
as a Function of
Source Resistance
60
50
40
30
20
10
0
-10 1 5 10 50 100 500 1000
1000
100
10
1
.1
.01 1 10 100 1K 10K 100K 1M
21
20
19
18
17
16
15
14 -60 -20 20 60 100 140
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
3.0 4.0 5.0 6.0 7.0 8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
010 50 100 500 1K 5K 10K
70
60
50
40
30
20
10
0-60 -20 0 20 60 100 140
100
90
80
70
60
50
40
30
20
10
01 10 100 1K 10K
FREQUENCY – MHz RADJ – Ω
TEMPERATURE – oC SUPPLY VOLTAGE – +V
LOAD RESISTANCE – ΩTEMPERATURE – oC SOURCE RESISTANCE – Ω
VS = +8V
VS = +3V
VS = +6V
GAIN 2
TA = 25oC
RL = 1kΩ
VS = +6V
f = 100kHz
TA = 25oC
FIGURE 3
VS = +6V TA = 25oC
VS = +6V
TA = 25oC
GAIN 2
VS = +6V GAIN 2
VS = +6V
TA = 25oC
BW = 10MHz
VOLTAGE
CURRENT
14
1
1211 8
7
4
3
0.2µF
0.2µF
592
51 51 RADJ 1k1k
TA = 25oCVS = +6V
OVERDRIVE RECOVERY TIME – ns
70
60
50
40
30
20
10
00 20 40 60 80 100120 140 160 180 200
DIFFERENTIAL INPUT VOLTAGE – mV
VS = +6V
TA = 25oC
GAIN 2
Ω
µ
Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
April 15, 1992 256
PHASE SHIFT – DEGREES
PHASE SHIFT – DEGREES
VOLTAGE GAIN – dB
VOLTAGE GAIN – dB
Phase Shift as a
Function of Frequency Phase Shift as a
Function of Frequency
Voltage Gain as a
Function of Frequency Voltage Gain as a
Function of Frequency
0
-5
-10
-15
-20
-25 0 1 2 3 4 5 6 7 8 9 10
0
-50
-100
-150
-200
-250
-300
-3501 10 100 1000
60
50
40
30
20
10
0
1 10 100 1000 .01 .1 1 10 100 1000
40
30
20
10
0
-10
-20
-30
-40
-50
FREQUENCY – MHz FREQUENCY – MHz
FREQUENCY – MHzFREQUENCY – MHz
VS = +6V
TA = 25oC
GAIN 2
VS = +6V
TA = 25oC
VS = +6V
Tamb = 25oC
RL = 1KΩ
VS = +6V
TA = 25oC
GAIN 3
GAIN 1
GAIN 2
GAIN 1
GAIN 2
TEST CIRCUITS TA = 25°C, unless otherwise specified.
VIN VOUT
RL
592
51Ω51Ω
51Ω51Ω
ein
eout eout
1k 1k
0.2µF
0.2µF
592
Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
April 15, 1992 257
TYPICAL APPLICATIONS
NOTE:
Basic Configuration
Disc/Tape Phase-Modulated Readback Systems Differentiation with High
Common-Mode Noise Rejection
NOTE:
For frequency F1 << 1/2 π (32) C
VO1.4 x 104CdVi
dT
Z
V1
2re+6
V0
7
5
4
1
14 11 10
-6
592
READ HEAD DIFFERENTIATOR/AMPLIFIER ZERO CROSSING DETECTOR
+5
9 4 8
529
7
5
Q
Q
6
3
2
1
10
+6
14 11 10 8
7
5
4
1
-6
AMPLITUDE: 1-10 mV p-p
FREQUENCY: 1-4 MHz
592
0.2µF
+6
0.2µF
2KΩ
2KΩ
V0
V1
C
14
1
11
4
10
57
8
-6
592
V0(s)
v1(s) 1.4 104
Z(S) 2re
1.4 104
Z(S) 32
FILTER NETWORKS
NOTES:
In the networks above, the R value used is assumed to include 2re, or approximately 32Ω.
S = jω
ω = 2πf
1.4 104
L1
sRL
1.4 104
Rs
s1RC
1.4 104
Ls
s2RLs 1LC
1.4 104
Rs21LC
s21LC sRC
Z NETWORK FILTER
TYPE V0 (s) TRANSFER
V1 (s) FUNCTION
LOW PASS
HIGH PASS
BAND PASS
BAND REJECT
RL
R C
R L C
R
L
C
