VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectifier Boost Diode VRRM = 1600 V VRRM Module for Power Factor Correction MOSFET = 600 V VDSS 60 A ID25 = 600 V = A IDAV = 106 A IF25 IFSM = 300 A VF (30A) = 2.24 V RDS(on) = 120 m = 50 Part name (Marking on product) VUM33-06PH 2 4 6 1 D D1 D3 D2 D4 2 3 4 1 3 DT T 5 5 8 6 7 7 Features: Advantages: Package: * Package with DCB ceramic base plate * Soldering connections for PCB mounting * Isolation voltage 3600 V~ * Low RDS(on) PolarTM MOSFET * Low package inductance for high speed switching * SONICTM boost diode - fast and soft reverse recovery - low operating forward voltage * 3 functions in one package * Output power up to 8 kW * No external isolation * Easy to mount with two screws * Suitable for wave soldering * High temperature and power cycling capability * Fits easily to all available PFC controller ICs * "V1-Pack" standard outline Insulated copper base plate IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 8 Application: * Power factor pre-conditioner for SMPS, UPS, battery chargers and inverters * Boost topology for SMPS including 1~ rectifier bridge * Power supply for welding equipment 20100921b 1-8 VUM 33-06PH MOSFET T Ratings Symbol Definitions Conditions VDSS drain source voltage VGSS VGSM max. DC gate voltage max. transient gate source voltage ID25 ID80 drain current Ptot total power dissipation RDS(on) drain source on resistance ID = 30 A; VGE = 10 V VGS(th) gate source threshold voltage IC = 8 mA; VDS = VGS TVJ = 25C IDSS drain source leakage current VDS = VDSS; VGS = 0 V TVJ = 25C TVJ = 125C IGSS gate source leakage current VGS = 20 V; VDS = 0 V Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz 8.0 nF QG(on) total gate charge VDS = 300 V; VGS = 10 V; ID = 50 A 165 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VDS = 380 V; ID = 20 A VGS = 0/10 V; RG = 4.7 W RG eff = 5.5 W 1) TVJ = 25C 56 12 110 12 0.3 0.16 ns ns ns ns mJ mJ td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VDS = 380 V; ID = 20 A VGS = 0/10 V; RG = 4.7 W RG eff = 5.5 W 1) TVJ = 125C 56 16 144 14 0.47 0.20 ns ns ns ns mJ mJ RthJC RthJH thermal resistance junction to case thermal resistance case to heatsink typ. max. Unit 600 V 20 30 V V TC = 25C TC = 80C 50 37 A A TC = 80C 500 W TVJ = 25C TVJ = 125C 120 240 m m TVJ = 25C continuous transient with heat transfer paste (IXYS test setup) 1) 2.5 0.18 5.0 V 50 500 A A 500 nA 0.14 0.24 K/W K/W RG eff includes the driver resistance of 0.8 W IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved min. 20100921b 2-8 VUM 33-06PH Boost Diode D Ratings Symbol Definitions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage IR Conditions max. Unit TVJ = 25C 600 V TC = 25C TC = 80C 60 40 A A IF = 30 A; VGE = 0 V TVJ = 25C TVJ = 125C 2.24 2.19 V V reverse current VR = VRRM TVJ = 25C TVJ = 125C 30 2 A mA Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 380 V diF /dt = -790 A/s IF = 20 A 2) Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 380 V diF /dt = -700 A/s IF = 20 A 2) RthJC RthJH thermal resistance junction to case thermal resistance case to heatsink with heat transfer paste (IXYS test setup) 2) min. typ. TVJ = 25C 0.24 11.7 43 0.026 C A ns mJ TVJ = 125C 0.59 15.9 55 0.076 C A ns mJ 0.72 0.96 0.84 K/W K/W Test setup: MOSFET T driven with RG eff = 5.5 W and VGS = 0/10 V Input Rectifier Bridge D1 - D4 Ratings typ. max. 1600 Unit V 80C 80C 25C 80C 106 57 106 71.5 A A A A t = 10 ms; sine 50 Hz TVJ = 45C TVJ = 125C 300 170 A A t = 10 ms; sine 50 Hz TVJ = 45C TVJ = 125C 450 240 A2s A2s TC = 80C 110 W IF = 50 A TVJ = 25C TVJ = 150C 1.39 1.39 V V reverse current VR = VRRM TVJ = 25C TVJ = 150C 20 1.5 A mA thermal resistance junction to case thermal resistance case to heatsink (per diode) with heat transfer paste (IXYS test setup) 0.64 0.85 K/W K/W Definitions Conditions Ratings typ. max. 150 150 125 Unit C C C 3600 V~ 2.5 Nm Symbol VRRM Definitions Conditions min. max. repetitive reverse voltage IDAV IFAVM IF25 IF80 average forward output current max. average forward current (per diode) forward current forward current sine 180 rect.; d = 0.5 DC DC TC TC TC TC IFSM max. forward surge current I2t I2t value for fusing Ptot total power dissipation VF forward voltage IR RthJC RthJH TVJ = 25C = = = = 0.72 Module Symbol TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage Md mounting torque (M5) min. -40 -40 -40 IISOL < 1 mA; 50/60 Hz; 1 sec. Weight 2 35 g TC = 25C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100921b 3-8 VUM 33-06PH Outline Drawing Dimensions in mm (1 mm = 0.0394") Logo XXX XX-XXXXX Part name YYCW Date Code Product Ordering Ordering Part Name Marking on Product Standard VUM 33-06PH VUM 33-06PH IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved Delivering Mode Base Qty Ordering Code Box 10 508843 20100921b 4-8 VUM 33-06PH 1.16 60 IDSS = 1 mA 1.12 50 1.08 40 ID VDSS 1.04 normalized 30 [A] 1.00 20 0.96 10 TJ = 125C TJ = 25C 0.92 -40 -20 0 20 40 60 80 0 100 120 140 2 3 4 Fig. 1 Drain source breakdown voltage VDSS versus junction temperature TJ = 125C [A] VGS = 15/10 V 7V ID 40 [A] 30 6V 10 2 4 6 8 6V 20 5.5 V 10 5.5 V 5V 0 0 10 5V 0 4 8 Fig. 3 Typical output characteristics 2.4 300 VGS = 10 V ID = 20 A 250 RDSon 2.0 normalized 1.5 1.0 RDSon RDSon 150 [m] normalized 0 25 50 75 100 125 50 150 TVJ [C] Fig. 5 Drain source on-state resistance RDSon versus junction temperature IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20 VGS = 5.5 V 6V TVJ = 125C 1.6 100 0.5 -25 5V 2.0 200 RDSon normalized 16 Fig. 4 Typical output characteristics 3.0 RDSon 12 VDS [V] VDS [V] 2.5 7V 6.5 V 50 6.5 V 20 0 VGS = 15/10 V 60 50 30 7 70 TJ = 25C 60 40 6 Fig. 2 Typical transfer characteristics 70 ID 5 VGS [V] TJ [C] 6.5/7/10/15 V 1.2 0.8 0 10 20 30 40 50 60 ID [A] Fig. 6 Drain source on-state resistance RDSon versus ID normalized to RDSon at VGS = 10 V and ID = 20 A 20100921b 5-8 VUM 33-06PH 12 70 ID = 60 A VDS = 380 V 10 VGS [V] 60 50 8 ID 40 6 [A] 30 4 20 2 0 10 0 50 100 150 0 -40 -20 200 QG [nC] 80 1.4 70 1.2 [mJ] td(on) 0.6 tr 30 0.8 160 [ns] [mJ] 0.4 0.2 10 20 ID [A] 30 0.0 0 50 40 Erec [mJ] ID = 20 A VDS = 380 V VGS = 0/10 V TVJ = 125C td(on) 40 tf 20 30 0 50 40 Eon 40 t [ns] 300 ID = 20 A VDS = 380 V VGS = 0/10 V TVJ = 125C 0.4 tr 250 td(off) 200 Eoff [mJ] 150 100 Eoff 5 50 tf Erec boost 4 t [ns] 0.2 20 0.2 0.0 0.6 80 60 0.6 0.4 10 t [ns] Fig. 10 Typ. turn-off energy and switching times versus drain current, inductive switching 100 1.0 Eon, 80 Eoff 0 120 ID [A] Fig. 9 Typ. turn-on energy and switching times versus drain current, inductive switching 0.8 td(off) RG = 4.7 VDS = 380 V VGS = 0/10 V TVJ = 125C 10 Erec boost 0 80 100 120 140 160 200 Eoff 0.6 20 Eon 0.2 60 1.0 t 40 0.4 0.0 60 50 RG = 4.7 VDS = 380 V VGS = 0/10 V TVJ = 125C 0.8 40 Fig. 8 Drain current ID versus case temperature TC 1.6 1.0 20 TC [C] Fig. 7 Gate charge characteristics Eon 0 6 7 8 RG [] 9 10 0 11 Fig. 11 Typ. turn-on energy and switching times versus gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 0.0 4 6 8 10 0 RG [] Fig. 12 Typ. turn-off energy and switching times versus gate resistor, inductive switching 20100921b 6-8 VUM 33-06PH 80 70 trr 60 [ns] 50 20 VR = 380 V TVJ = 125C 40 A 18 IRM 20 A 16 10 A 4 5 6 7 8 RG [] 9 10 10 11 10 A 4 0.12 VR = 380 V TVJ = 125C 0.8 5 6 7 8 RG [] 10 40 A 40 A QRR Erec 0.6 20 A [mJ] 0.5 10 A 0.4 4 5 6 7 8 9 10 11 VR = 380 V TVJ = 125C 0.10 0.7 0.08 0.06 20 A 0.04 10 A 0.02 11 4 5 6 7 8 9 10 11 RG [] RG [] Fig. 15 Reverse recovery charge QRR IRM of the boost diode versus RG Fig. 16 Reverse recovery energy Erec of the boost diode versus RG 60 0.8 40 A 0.7 QRR 9 Fig. 14 Reverse recovery current IRM of the boost diode versus RG of the boost MOSFET 0.9 0.3 20 A 12 Fig. 13 Reverse recovery time trr of the boost diode versus RG of boost MOSFET [C] 40 A [A] 14 40 30 VR = 380 V TVJ = 125C 50 40 20 A 0.6 IF 30 [C] [A] 0.5 0.4 10 0.3 500 550 6.8 600 4.7 5.6 650 700 10 750 800 850 -di/dt [A(s] Fig. 17 Typ. turn off characteristics of the boost diode versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 25C 125C 150C 20 10 A 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF [V] Fig. 18 Forward characteristics boost diode 20100921b 7-8 VUM 33-06PH 70 350 60 300 50 250 IF 40 IFSM 200 [A] 30 [A] TVJ=125C 10 2 I t 300 0 0.0 0.4 0.8 1.2 1.6 TVJ = 45C TVJ = 45C 150 TVJ= 25C 2 [A s] 200 TVJ = 125C 0 0.001 TVJ = 125C 100 50 2.0 VR = 0 V 400 100 20 500 f = 50 Hz VR = 0.8VRRM 0.01 0.1 1 VF [V] t [s] Fig. 19 Forward current vs. voltage drop of input rectifier diode Fig. 20 Non-repetitive peak surge current (Rectifier Diodes) 0 1 10 t [ms] Fig. 21 I2t for fusing (Rectifier Diodes) Boost Diode 0.8 Rectifier Diode 0.6 ZthJH Fig. 22 Typ. transient thermal impedances of Boost Diode and Rectifier Diode 0.4 [K/W] 0.2 0.0 1 10 100 1000 10000 t [ms] 0.20 MOSFET 0.15 ZthJH Fig. 23 Typ. transient thermal impedances of MOSFET 0.10 [K/W] 0.05 0.00 1 10 100 1000 10000 t [ms] IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100921b 8-8