© 2010 IXYS All rights reserved 1 - 8
20100921b
VUM 33-06PH
IXYS reserves the right to change limits, test conditions and dimensions.
Power MOSFET Stage
for Boost Converters
Module for Power Factor Correction
Single Phase
Rectifier Boost Diode MOSFET
VRRM = 1600 V VRRM = 600 V VDSS = 600 V
IDAV = 106 A IF25 = 60 A ID25 = 50 A
IFSM = 300 A VF (30A) = 2.24 V RDS(on) = 120 mΩ
Features:
• Package with DCB ceramic base plate
• Soldering connections for PCB
mounting
• Isolation voltage 3600 V~
• Low RDS(on) Polar™ MOSFET
• Low package inductance for high
speed switching
• SONIC™ boost diode
- fast and soft reverse recovery
- low operating forward voltage
Package:
• "V1-Pack" standard outline
Insulated copper base plate
Part name (Marking on product)
VUM33-06PH
Application:
• Power factor pre-conditioner for
SMPS, UPS, battery chargers and
inverters
• Boost topology for SMPS including
1~ rectifier bridge
• Power supply for welding equipment
Advantages:
• 3 functions in one package
• Output power up to 8 kW
• No external isolation
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power
cycling capability
• Fits easily to all available PFC
controller ICs
1
34
5678
2
1
2
DT
D3
D2
D1
D4 T
3
8
D
4 6
5 7
© 2010 IXYS All rights reserved 2 - 8
20100921b
VUM 33-06PH
IXYS reserves the right to change limits, test conditions and dimensions.
MOSFET T
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VDSS drain source voltage TVJ = 25°C 600 V
VGSS
VGSM
max. DC gate voltage
max. transient gate source voltage
continuous
transient
±20
±30
V
V
ID25
ID80
drain current TC = 25°C
TC = 80°C
50
37
A
A
Ptot total power dissipation TC = 80°C 500 W
RDS(on) drain source on resistance ID = 30 A; VGE = 10 V TVJ = 25°C
TVJ = 125°C
120
240
mΩ
mΩ
VGS(th) gate source threshold voltage IC = 8 mA; VDS = VGS TVJ = 25°C 2.5 5.0 V
IDSS drain source leakage current VDS = VDSS; VGS = 0 V TVJ = 25°C
TVJ = 125°C
50
500
µA
µA
IGSS gate source leakage current VGS = ±20 V; VDS = 0 V ±500 nA
Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz 8.0 nF
QG(on) total gate charge VDS = 300 V; VGS = 10 V; ID = 50 A 165 nC
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 25°C
VDS = 380 V; ID = 20 A
VGS = 0/10 V; RG = 4.7 W
RG eff = 5.5 W 1)
56
12
110
12
0.3
0.16
ns
ns
ns
ns
mJ
mJ
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 125°C
VDS = 380 V; ID = 20 A
VGS = 0/10 V; RG = 4.7 W
RG eff = 5.5 W 1)
56
16
144
14
0.47
0.20
ns
ns
ns
ns
mJ
mJ
RthJC
RthJH
thermal resistance junction to case
thermal resistance case to heatsink with heat transfer paste (IXYS test setup) 0.18
0.14
0.24
K/W
K/W
1) RG eff includes the driver resistance of 0.8 W
© 2010 IXYS All rights reserved 3 - 8
20100921b
VUM 33-06PH
IXYS reserves the right to change limits, test conditions and dimensions.
Input Rectifier Bridge D1 - D4
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitive reverse voltage TVJ = 25°C 1600 V
IDAV
IFAVM
IF25
IF80
average forward output current
max. average forward current (per diode)
forward current
forward current
sine 180° TC = 80°C
rect.; d = 0.5 TC = 80°C
DC TC = 25°C
DC TC = 80°C
106
57
106
71.5
A
A
A
A
IFSM max. forward surge current t = 10 ms; sine 50 Hz TVJ = 45°C
TVJ = 125°C
300
170
A
A
I2tI2t value for fusing t = 10 ms; sine 50 Hz TVJ = 45°C
TVJ = 125°C
450
240
A2s
A2s
Ptot total power dissipation TC = 80°C 110 W
VFforward voltage IF = 50 A TVJ = 25°C
TVJ = 150°C
1.39
1.39
V
V
IRreverse current VR = VRRM TVJ = 25°C
TVJ = 150°C
20
1.5
µA
mA
RthJC
RthJH
thermal resistance junction to case
thermal resistance case to heatsink
(per diode)
with heat transfer paste (IXYS test setup) 0.72
0.64
0.85
K/W
K/W
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
-40
150
150
125
°C
°C
°C
VISOL isolation voltage IISOL < 1 mA; 50/60 Hz; 1 sec. 3600 V~
Mdmounting torque (M5) 2 2.5 Nm
Weight 35 g
TC = 25°C unless otherwise stated
Boost Diode D
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitve reverse voltage TVJ = 25°C 600 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
60
40
A
A
VFforward voltage IF = 30 A; VGE = 0 V TVJ = 25°C
TVJ = 125°C
2.24
2.19
V
V
IRreverse current VR = VRRM TVJ = 25°C
TVJ = 125°C
30
2
µA
mA
Qrr
IRM
trr
Erec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
VR = 380 V
diF /dt = -790 A/µs 2) TVJ = 25°C
IF = 20 A
0.24
11.7
43
0.026
µC
A
ns
mJ
Qrr
IRM
trr
Erec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
VR = 380 V
diF /dt = -700 A/µs 2) TVJ = 125°C
IF = 20 A
0.59
15.9
55
0.076
µC
A
ns
mJ
RthJC
RthJH
thermal resistance junction to case
thermal resistance case to heatsink with heat transfer paste (IXYS test setup) 0.84
0.72
0.96
K/W
K/W
2) Test setup: MOSFET T driven with RG eff = 5.5 W and VGS = 0/10 V
© 2010 IXYS All rights reserved 4 - 8
20100921b
VUM 33-06PH
IXYS reserves the right to change limits, test conditions and dimensions.
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard VUM 33-06PH VUM 33-06PH Box 10 508843
Outline Drawing Dimensions in mm (1 mm = 0.0394“)
Product Ordering
XXX XX-XXXXX YYCW
Part name Date Code
Logo
© 2010 IXYS All rights reserved 5 - 8
20100921b
VUM 33-06PH
IXYS reserves the right to change limits, test conditions and dimensions.
-40 -20 0 20 40 60 80 100 120 140
0.92
0.96
1.00
1.04
1.08
1.12
1.16
TJ [°C]
ID
[A]
VDSS
normalized
2 3 4 5 6 7
0
10
20
30
40
50
60
VGS [V]
-25 0 25 50 75 100 125 150
0.5
1.0
1.5
2.0
2.5
3.0
50
100
150
200
250
300
0 10 20 30 40 50 60
0.8
1.2
1.6
2.0
2.4
0 4 8 12 16 20
0
10
20
30
40
50
60
70
0 2 4 6 8 10
0
10
20
30
40
50
60
70
5.5 V
TJ = 125°C
TJ = 25°C
ID
[A]
VDS [V]
5 V
6 V
6.5 V
7 V
TJ = 25°C TJ = 125°C
ID
[A]
VDS [V]
5.5 V
5 V
6 V
6.5 V
7 V
RDSon
normalized
TVJ [°C]
RDSon
[mΩ]
RDSon
RDSon
normalized
RDSon
normalized
ID [A]
5.5 V 6 V5 V
IDSS = 1 mA
VGS = 15/10 V
VGS = 15/10 V
VGS =
TVJ = 125°C
6.5/7/10/15 V
VGS = 10 V
ID = 20 A
Fig. 1 Drain source breakdown voltage
VDSS versus junction temperature
Fig. 2 Typical transfer characteristics
Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics
Fig. 5 Drain source on-state resistance
RDSon versus junction temperature
Fig. 6 Drain source on-state resistance
RDSon versus ID normalized to RDSon
at VGS = 10 V and ID = 20 A
© 2010 IXYS All rights reserved 6 - 8
20100921b
VUM 33-06PH
IXYS reserves the right to change limits, test conditions and dimensions.
4 6 8 10
0.0
0.2
0.4
0.6
0
50
100
150
200
250
300
0 50 100 150 200
0
2
4
6
8
10
12
QG [nC]
VGS
[V]
-40 -20 0 20 40 60 80 100 120 140 160
0
10
20
30
40
50
60
70
4 5 6 7 8 9 10 11
0.0
0.2
0.4
0.6
0.8
1.0
0
20
40
60
80
100
0 10 20 30 40 50
0.0
0.2
0.4
0.6
0.8
1.0
0
40
80
120
160
200
0 10 20 30 40 50
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
10
20
30
40
50
60
70
80
Eon
tr
ID
[A]
TC [°C]
Eon
[mJ]
ID [A]
td(on)
Eoff
[mJ]
t
[ns]
t
[ns]
ID [A]
Eoff tf
td(off)
RG = 4.7 Ω
VDS = 380 V
VGS = 0/10 V
TVJ = 125°C
RG = 4.7 Ω
VDS = 380 V
VGS = 0/10 V
TVJ = 125°C
Eon,
Erec
[mJ]
RG [Ω]
t
[ns]
Eon
tr
Erec boost
ID = 20 A
VDS = 380 V
VGS = 0/10 V
TVJ = 125°C
td(on)
Eoff
[mJ]
RG [Ω]
t
[ns]
Eoff
tf
td(off)
ID = 20 A
VDS = 380 V
VGS = 0/10 V
TVJ = 125°C
Erec boost
ID = 60 A
VDS = 380 V
Fig. 7 Gate charge characteristics
Fig. 9 Typ. turn-on energy and switching times
versus drain current, inductive switching
Fig. 10 Typ. turn-off energy and switching times
versus drain current, inductive switching
Fig. 11 Typ. turn-on energy and switching times
versus gate resistor, inductive switching
Fig. 12 Typ. turn-off energy and switching times
versus gate resistor, inductive switching
Fig. 8 Drain current ID versus case temperature TC
© 2010 IXYS All rights reserved 7 - 8
20100921b
VUM 33-06PH
IXYS reserves the right to change limits, test conditions and dimensions.
4 5 6 7 8 9 10 11
30
40
50
60
70
80
RG [Ω]
trr
[ns]
40 A
4 5 6 7 8 9 10 11
10
12
14
16
18
20
500 550 600 650 700 750 800 850
0.3
0.4
0.5
0.6
0.7
0.8
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
50
60
4 5 6 7 8 9 10 11
0.02
0.04
0.06
0.08
0.10
0.12
4 5 6 7 8 9 10 11
0.3
0.4
0.5
0.6
0.7
0.8
0.9
20 A
10 A
VR = 380 V
TVJ = 125°C
RG [Ω]
IRM
[A]
VR = 380 V
TVJ = 125°C
40 A
20 A
10 A
RG [Ω]
QRR
[µC]
VR = 380 V
TVJ = 125°C
40 A
20 A
10 A
RG [Ω]
Erec
[mJ]
VR = 380 V
TVJ = 125°C
40 A
20 A
10 A
-di/dt [A(µs]
QRR
[µC]
40 A
20 A
10 A
10 Ω
5.6 Ω4.7 Ω
6.8 Ω
VF [V]
IF
[A]
25°C
125°C
150°C
Fig. 16 Reverse recovery energy Erec
of the boost diode versus RG
Fig. 17 Typ. turn off characteristics
of the boost diode versus di/dt Fig. 18 Forward characteristics boost diode
Fig. 13 Reverse recovery time trr of the boost
diode versus RG of boost MOSFET
Fig. 14 Reverse recovery current IRM of the boost
diode versus RG of the boost MOSFET
Fig. 15 Reverse recovery charge QRR IRM
of the boost diode versus RG
© 2010 IXYS All rights reserved 8 - 8
20100921b
VUM 33-06PH
IXYS reserves the right to change limits, test conditions and dimensions.
0.0 0.4 0.8 1.2 1.6 2.0
0
10
20
30
40
50
60
70
TVJ=125°C
0.001 0.01 0.1 1
0
50
100
150
200
250
300
350
TVJ = 125°C
1 10
0
100
200
300
400
500 VR = 0 V
TVJ = 45°C
TVJ = 125°C
TVJ= 25°C
IF
[A]
VF [V]
IFSM
[A]
t [s]
I2t
[A2s]
t [ms]
f = 50 Hz
VR = 0.8VRRM
TVJ = 45°C
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
ZthJH
[K/W]
t [ms]
Boost Diode
Rectifier Diode
1 10 100 1000 10000
0.00
0.05
0.10
0.15
0.20
ZthJH
[K/W]
t [ms]
MOSFET
Fig. 20 Non-repetitive peak
surge current
(Rectifier Diodes)
Fig. 21 I2t for fusing
(Rectifier Diodes)
Fig. 19 Forward current vs.
voltage drop of input
rectifier diode
Fig. 22
Typ. transient thermal impedances of
Boost Diode and Rectifier Diode
Fig. 23
Typ. transient thermal impedances of
MOSFET
