UF1000CT – UF1008CT 1 of 4 © 2006 Won-Top Electronics
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UF1000CT – UF1008CT
10A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER
Features
! Glass Passivated Die Construction B
! Ultra-Fast Switching
! Low Forward Voltage Drop C
! Low Reverse Leakage Current
! High Surge Current Capability G A
! Plastic Material has UL Flammability
Classification 94V-O PIN1 2 3
D
Mechanical Data F E
! Case: TO-220, Molded Plastic
! Terminals: Plated Leads Solderable per P
MIL-STD- 202, Met hod 208
! Polarity: See Diagram I
! Weight: 2.24 grams (approx.)
! Mounting Position: Any H L
! Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1 - +
J PIN 3 - Case, PIN 2
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise s pecifi ed
Single Phase, half wave, 60Hz, resistive or inductive load.
For capaciti ve load, derate current by 20%.
Characteristic Symbol UF
1000CT UF
1001CT UF
1002CT UF
1003CT UF
1004CT UF
1006CT UF
1008CT Unit
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR50 100 200 300 400 600 800 V
RMS Reverse Voltage VR(RMS) 35 70 140 210 280 420 560 V
Average Rectified Output Current @TC = 100°C IO10 A
Non-Repetiti ve P eak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method) IFSM 125 A
Forward Voltage @IF = 5.0A VFM 1.0 1.3 1.7 V
Peak Reverse Current @T
A = 25°C
At Rated DC Blocking Voltage @TA = 125°C IRM 10
400 µA
Reverse Recovery Time (Note 1) trr 50 100 nS
Typi cal Junction Capacitanc e (Note 2) Cj80 50 pF
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
TO-220
Dim Min Max
A13.90 15.90
B9.80 10.70
C2.54 3.43
D3.56 4.56
E12.70 14.73
F0.51 0.96
G3.55 Ø 4.09 Ø
H5.75 6.85
I4.16 5.00
J2.03 2.92
K0.30 0.65
L1.14 1.40
P2.29 2.79
All Dimensions in mm