© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 14
1Publication Order Number:
MJE350/D
MJE350
Plastic Medium Power
PNP Silicon Transistor
This device is designed for use in line−operated applications such as
low power, line−operated series pass and switching regulators
requiring PNP capability.
Features
•High Collector−Emitter Sustaining Voltage −
VCEO(sus) = 300 Vdc @ IC
= 1.0 mAdc
•Excellent DC Current Gain −
hFE = 30−240 @ IC
= 50 mAdc
•Plastic Thermopad Package
•Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
ÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
ÎÎÎÎ
VCEO
ÎÎÎÎ
300
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEB
ÎÎÎÎ
ÎÎÎÎ
3.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Current − Continuous
ÎÎÎÎ
ÎÎÎÎ
IC
ÎÎÎÎ
ÎÎÎÎ
500
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
PD
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
20
0.16
ÎÎÎ
Î
Î
Î
ÎÎÎ
W
mW/_C
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎ
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎ
ÎÎÎÎ
–65 to +150
ÎÎÎ
ÎÎÎ
_C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Case
ÎÎÎÎ
ÎÎÎÎ
qJC
ÎÎÎÎ
ÎÎÎÎ
6.25
ÎÎÎ
ÎÎÎ
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
VCEO(sus)
ÎÎ
ÎÎ
ÎÎ
300
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 300 Vdc, IE = 0)
ÎÎÎÎ
ÎÎÎÎ
ICBO
ÎÎ
ÎÎ
−
ÎÎÎ
ÎÎÎ
100
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
IEBO
ÎÎ
ÎÎ
ÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
100
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
ÎÎÎÎ
ÎÎÎÎ
hFE
ÎÎ
ÎÎ
30
ÎÎÎ
ÎÎÎ
240
ÎÎÎ
ÎÎÎ
−
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MJE350 TO−225 500 Units/Box
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS, 20 WATTS
http://onsemi.com
MJE350G TO−225
(Pb−Free)
500 Units/Box
TO−225
CASE 77
STYLE 1
21
3
MARKING DIAGRAM
YWW
JE350G
Y = Year
WW = Work Week
JE350 = Device Code
G= Pb−Free Package
MJE350
http://onsemi.com
2
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
200
7.0 205.0
50
30
10
10 50 10030
25°C
TJ = 150°C
−55 °C
Figure 1. DC Current Gain
100
20
70
200 50030070
VCE = 2.0 V
VCC = 10 V
Figure 2. “On” Voltages
1.0
IC, COLLECTOR CURRENT (mA)
0.8
0.2
0
TJ = 25°C
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
VBE @ VCE = 10 V0.6
0.4
VCE(sat)
7.0 205.0 10 50 10030 200 50030070
IC/IB = 10
IC/IB = 5.0
1000
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
70
300
10
50
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED
Figure 3. Active−Region Safe Operating Area
1.0ms
dc
700
2001005020
TJ = 150°C
IC, COLLECTOR CURRENT (mA)
100
300
500
30
100ms
40030 70
200
20
500ms
+1.2
IC, COLLECTOR CURRENT (mA)
70
Figure 4. Temperature Coefficients
5030105.0 5007.0 20
+0.8
+0.4
0
−0.4
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8 100 200 300
*APPLIES FOR IC/IB < hFE/4
*qVC for VCE(sat)
qVB for VBE
+100 °C to +150°C
+25 °C to +100°C
−55 °C to +25°C
+25 °C to +150°C
−55 °C to +25°C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
20
TC, CASE TEMPERATURE (°C)
Figure 5. Power Derating
10080400 16020 60
16
12
8.0
4.0
0120 140
PD, POWER DISSIPATION (WATTS)
MJE350
http://onsemi.com
3
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
−B−
−A−M
K
FC
Q
H
V
G
S
D
J
R
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 −−− 1.02 −−−
__
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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