LTO-DMS
MBR30100CT thru MBR30200CT
30 Amp HT Power Schottky Barrier Rectifier
100 Volts to 200 Volts
Features
* High Junction Temperature Capability
* Low Leakage Current and Low Forward Voltage Drop
* Low Power Loss and High Efficiency
Maximum Ratings
* Operating Junction Temperature: 150°C
* Storage Temperature: - 55 °C to +175°C
* Per diode Thermal Resistance 2.2°C/W Junction to Case
Mechanical Data
* Case: Molded Plastic
* Terminals: Plated Lead Sol derable per
MIL-STD-202, Method 208
* Marking:Type Number
* Weight: 2.24 grams (approx)
LTO-DMS Semiconductor Corporation
1468, 86th Street, Brooklyn
New York, 11228, USA
Tel: (718) 234 6010 / (707) 3223 4679
Fax:(718) 234 6013 / (707) 3223 6696
DIMENSIONS
INCHES
MM
DIM
MIN MAX MIN MAX
NO
TE
A 0.570 0.620.
14.4 15.75
B 0.380 0.405 9.66 10.28
C 0.100 0.120 2.54 3.04
D 0.235 0.255 5.97 6.48
E 0.335 0.365 8.51 9.27
F 0.110 0.155 2.80 3.93
G 0.500 0.562
12.7 14.27
H 0.095 0.105 2.42 2.66
I 0.025 0.035 0.64 0.89
J 0.016 0.025 0.41 0.64
K 0.142 0.147 3.61 3.37
L 0.160 0.190 4.06 4.82
M 0.045 0.055 1.14 1.39
N 0.102 typ 2.6 typ
Symbol Characteristics MBR30100CT MBR30150CT MBR30200CT Unit
VRRM Maximum Recurrent Peak Reverse Voltage 100 150 200 V
VRM ximum DC Blocking Voltage 100 150 200 V Ma
VR(RMS) Maximum RMS Voltage 70 105 140 V
I=15.0A @TJ=25°C
IF(AV) Average Forward Current per leg 15 A
FSM 8.3ms Single Half-Sine-Wave
Peak Forward Surge C
dv/dt Voltage Rate Of Change (Rated VR) 10000 V /us
IR Maximum DC Reverse Current
@TJ=25°C
@TJ=125°C 40
At Rated DC Blocking Voltage
0.2 mA
CJ Typical Junction Capacitance (Note 3) 200 pF
TSTG Storage Temperature Range -55to+175 °C
OTE 1. 300us Pulse Width, Duty Cycle
3. Measured At 1.0MHz An
VF Maximum Forward Voltage (Note 1)
F0.90 0.95 V
I urrent 150 A
RthJC Typical Thermal Resistance (Note 2) 2.0 °C/ W
TJ Operating Temperature Range -55to+150 °C
N S: 2%.
2. Thermal Resistance Junction To Case.
d Applied Reverse Voltage Of 4.0V DC.
R 2002/06/17
TO-220AB
evision:1
