© 2018 IXYS CORPORATION, All Rights Reserved DS100840D(10/18)
N-Channel Enhancement Mode
IXFP72N20X3M VDSS = 200V
ID25 = 72A
RDS(on)
20m
Features
International Standard Package
Plastic Overmolded Tab
Low RDS(ON) and QG
Avalanche Rated
2500V~ Electrical Isolation
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 200 V
VGS(th) VDS = VGS, ID = 1.5mA 2.5 4.5 V
IGSS VGS = 20V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 5 A
TJ = 125C 250 A
RDS(on) VGS = 10V, ID = 36A, Note 1 15.7 20.0 m
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 200 V
VDGR TJ= 25C to 150C, RGS = 1M200 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C, Limited by TJM 72 A
IDM TC= 25C, Pulse Width Limited by TJM 130 A
IATC= 25C36A
EAS TC= 25C 1.2 J
dv/dt IS IDM, VDD VDSS, TJ 150°C 20 V/ns
PDTC= 25C36W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
VISOL 50/60 Hz, 1 Minute 2500 V~
MdMounting Torque 1.13 / 10 Nm/lb.in
Weight 2.5 g
(Electrically Isolated Tab)
X3-Class HiPerFETTM
Power MOSFET
Preliminary Technical Information
G = Gate D = Drain
S = Source
OVERMOLDED
TO-220
GDSIsolated Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP72N20X3M
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 72 A
ISM Repetitive, pulse Width Limited by TJM 288 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 95 ns
QRM 380 nC
IRM 8 A
IF = 36A, -di/dt = 100A/μs
VR = 100V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 30 48 S
RGi Gate Input Resistance 2
Ciss 3780 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 660 pF
Crss 1.7 pF
Co(er) 340 pF
Co(tr) 1030 pF
td(on) 23 ns
tr 28 ns
td(off) 78 ns
tf 11 ns
Qg(on) 55 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 19 nC
Qgd 15 nC
RthJC 3.5 C/W
RthCS 0.50 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10 (External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Terminals: 1 - Gate
2 - Drain
3 - Source
123
OVERMOLDED TO-220
(IXFP...M) oP
© 2018 IXYS CORPORATION, All Rights Reserved
IXFP72N20X3M
Fig. 1. Output Characteristics @ TJ = 25
o
C
0
10
20
30
40
50
60
70
80
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
6V
8V
5V
Fig. 3. Output Characteristics @ TJ = 125
o
C
0
10
20
30
40
50
60
70
80
00.511.522.533.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
5V
8V
7V
6V
Fig. 4. RDS(on) Normalized to ID = 36A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 72A
I
D
= 36A
Fig. 5. RDS(on) Normalized to ID = 36A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 2. Extended Output Characteristics @ TJ = 25
o
C
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
8V
7V
9V
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
- Degrees Centigrade
BV
DSS
/ V
GS(th)
- Normalized
BV
DSS
V
GS(th)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP72N20X3M
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
0 102030405060708090100
I
D
- Amperes
g
f s
- Siemens
25
o
C
125
o
C
T
J
= - 40
o
C
V
DS
= 10V
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
350
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
SD
- Volts
I
S
- Amperes
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50 55
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 100V
I
D
= 36A
I
G
= 10mA
Fig. 11. Capacitance
1
10
100
1000
10000
100000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
1ms
100μs
R
DS(
on
)
Limit
10ms
DC
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
V
DS
= 10V
© 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_72N20X3(24-S202) 5-31-17
IXFP72N20X3M
Fig. 14. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 13. Output Capacitance Stored Energy
0
1
2
3
4
5
6
7
0 20 40 60 80 100 120 140 160 180 200
V
DS
- Volts
E
OSS
- MicroJoules
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