BAS16WS SMALL SIGNAL DIODES
PRV : 100 Volts
Io : 250 mA
FEATURES :
* Silicon Epitaxial Planar Diode
* Fast switching diodes.
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-323 plastic Case
* Weight : approx. 0.004 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Reverse Voltage VR75 V
Peak Reverse Voltage VRM 100 V
Rectified Current (Continuous) IF(AV) 250 mA
Surge Forward Current at t = 1 s and Tj = 25 °CIFSM 500 mA
Power Dissipation at Tamb = 25 °CPtot 200 1) mW
Junction Temperature Tj 150 °C
Storage Temperature Range TS -65 to + 150 °C
ELECTRICAL CHARACTERISTICS
(Rating at Tj = 25 °C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit
Forward Voltage at IF = 50 mA VF- - 1 V
Leakage Current at VR=25 V, Tj=150°CIR- - 30 nA
at VR = 75 V IR- - 1 µA
at VR=75 V, Tj=150°CIR- - 50 µA
Capacitance at VF = VR = 0 V Ctot - - 4 pF
Reverse Recovery Time
from IF = 10 mA to IR = 10 mA,
IR = 6 V, RL = 100 Ω
Thermal Resistance Junction to Ambient Air RthJA - - 650 1) °C/W
Note : 1) Valid provided that electrodes are kept at ambient temperature
Page 1 of 2 Rev. 03 : March 25, 2005
nsTrr - - 6
Dimensions in inches and (millimeters)
SOD-323
0.112 (2.85)
0.076 (1.95)
0.059 (1.5)
0.043 (1.1)
0.065 (1.65)
0.100 (2.55)
0.012 (0.3)
max. 0.004(0.1)
0.049 (1.25)
max.
min. 0.010 (0.25)
max. 0.006 (0.15)
RATINGS AND CHARACTERISTIC CURVES ( BAS16WS)
Forward charecteristics Dynamic forward resistance
versus forward current
Admissible power dissipation
Relative capacitance
versus ambient temperture
versus reverse voltage
For conditions, see footnote in table
"Absolute Maximum Ratings"
Page 2 of 2 Rev. 03 : March 25, 2005
10-2
10-1
1
10
102
103
0 1 2 V
Tj = 100 °C
Tj = 25 °C
mA
VF
iF
104
103
102
10
1
2
5
2
5
2
5
2
5
10-2 10-1 110 102mA
V
Tj = 25 °C
f
=
1
kHz
rF
IF
500
400
300
200
100
00 100 200 °C
Tamb
Ptot
mW
1.1
1.0
0.9
0.8
0.7
0 2 4 6 8 10 V
VR
Ctot (VR)
Ctot (0 V) Tj = 25 °C
f = 1 kHz
