DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C; RGS = 1 M 200 V VGS Continuous 20 V VGSM Transient 30 V ID25 Tc = 25C 25 A IDM Tc = 25C, pulse width limited by TJM 150 A IAR Tc = 25C 25 A EAR Tc = 25C 20 mJ 5 V/ns dv/dt IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 >200 V/ns 590 W 284 W 3.0 W RthJC 0.25 C/W RthJHS 0.53 C/W PDC Tc = 25C Derate 1.9W/C above 25C PDAMB Tc = 25C Symbol Test Conditions SG1 VDSS VGS = 0 V, ID = 3 ma 200 VGS(th) VDS = VGS, ID = 4 ma 2.5 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25C VGS = 0 TJ = 125C Weight V 5.5 V 100 nA 50 1 A mA 18 VDS = 15 V, ID = 0.5ID25, pulse test -55 +175 -55 1.6mm(0.063 in) from case for 10 s S 175 Tstg = 25 A RDS(on) = 0.08 PDC = 590 W C C +175 SG2 SD1 SD2 * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power max. .08 TJM TL typ. VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% TJ ID25 Features Characteristic Values min. gfs 200 V DRAIN TJ = 25C unless otherwise specified RDS(on) = GATE IS = 0 PDHS VDSS C 300 C 2 g * * - - * * * cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages * Optimized for RF and high speed switching at frequencies to 100MHz * Easy to mount--no insulators needed * High power density DE275-201N25A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. RG 0.3 Ciss 2500 pF 250 pF 50 pF 21 pF 5 ns 5 ns 8 ns 8 ns 50 nC 20 nC 30 nC Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgd Source-Drain Diode Characteristic Values (TJ = 25C unless otherwise specified) Symbol Test Conditions min. IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2% typ. max. 25 A 150 A 2.0 V 300 Trr ns For detailed device mounting and installation instructions, see the "DESeries MOSFET Mounting Instructions" technical note on IXYS RF's web site at www.ixysrf.com/Technical_Support/App_notes.html IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE275-201N25A RF Power MOSFET 201N25A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. 10 DRAIN Ld 4 Lg Doff Roff D1crs Rd D2crs 20 GATE 6 8 1 5 Don 2 M3 Dcos Rds 3 Ron 7 Ls 30 SOURCE Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: ********** *SYM=POWMOSN .SUBCKT 201N25A 10 20 30 * TERMINALS: D G S * 200 Volt 25 Amp .08 ohm N-Channel Power MOSFET M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 1.5 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 2.5N RD 4 1 .08 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .1N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=25.0) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=1100P BV=500 M=.5 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=300P BV=500 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0260 Rev 2 (c) 2003 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com