SS5P10-M3/86A - Vishay [General Semiconductor]

SS5P9, SS5P10

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Revision: 18-Jun-12 1Document Number: 88984

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High Current Density Surface Mount

Schottky Barrier Rectifiers

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode power

supplies, freewheeling diodes, DC/DC converters and

polarity protection application.

FEATURES

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Guardring for overvoltage protection

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS compliant, and

commercial grade

Base P/NHM3 - halogen-free, RoHS compliant, and

automotive grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

PRIMARY CHARACTERISTICS

IF(AV) 5.0 A

VRRM 90 V, 100 V

IFSM 150 A

VF at IF = 5.0 A 0.649 V

IR4.5 μA

TJ max. 150 °C

TO-277A (SMPC)

Anode 1

Anode 2

Cathode

eSMP

® Series

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SS5P9 SS5P10 UNIT

Device marking code S59 S510

Maximum repetitive peak reverse voltage VRRM 90 100 V

Maximum average forward rectified current (fig. 1) IF(AV) 5.0 A

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load IFSM 150 A

Non-repetitive avalanche energy

at IAS = 2.0 A, TJ = 25 °C EAS 20 mJ

Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C

SS5P9, SS5P10

www.vishay.com Vishay General Semiconductor

Revision: 18-Jun-12 2Document Number: 88984

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms

Note

(1) Units mounted on recommended PCB 1 oz. pad layout

Note

(1) Automotive grade

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT

Instantaneous forward voltage

IF = 2.5 A TA = 25 °C

VF (1)

0.708 -

IF = 5.0 A 0.832 0.88

IF = 2.5 A TA = 125 °C 0.571 -

IF = 5.0 A 0.649 0.68

Reverse current Rated VR

TA = 25 °C IR (2) 4.5 15 μA

TA = 125 °C 2.7 5 mA

Typical junction capacitance 4.0 V, 1 MHz CJ130 - pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)

PARAMETER SYMBOL SS5P9 SS5P10 UNIT

Typical thermal resistance RJA (1) 65 °C/W

RJL 3

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE

SS5P10-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel

SS5P10-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel

SS5P10HM3/86A (1) 0.10 86A 1500 7" diameter plastic tape and reel

SS5P10HM3/87A (1) 0.10 87A 6500 13" diameter plastic tape and reel

SS5P9, SS5P10

www.vishay.com Vishay General Semiconductor

Revision: 18-Jun-12 3Document Number: 88984

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 C unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Forward Power Loss Characteristics

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

1.0

2.0

3.0

4.0

5.0

6.0

80 90 100 110 120 130 140 150

Average Forward Rectified Current (A)

Lead Temperature (°C)

Resistive or Inductive Load

measured

at the Cathode Band Terminal

0123456

D = 0.1

D = 0.2

D = 0.3 D = 0.5 D = 0.8

D = 1.0

Average Forward Current (A)

Average Power Loss (W)

D = t

/T t

0.01

0.1

100

0 0.2 0.4 0.6 0.8 1.0 1.2

TA = 150 °C

TA = 125 °C

TA = 25 °C

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

0.0001

0.001

0.01

0.1

100

10 20 30 40 50 60 70 80 90 100

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Current (mA)

TA = 150 °C

TA = 125 °C

TA = 25 °C

100

1000

0.1 1 10 100

Reverse Voltage (V)

Junction Capacitance (pF)

0.01 0.1 1 10 100

100

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

Junction to Ambient

SS5P9, SS5P10

www.vishay.com Vishay General Semiconductor

Revision: 18-Jun-12 4Document Number: 88984

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Conform to JEDEC TO-277A

TO-277A (SMPC)

0.016 (0.40)

0.006 (0.15)

0.047 (1.20)

0.039 (1.00)

0.146 (3.70)

0.134 (3.40)

0.087 (2.20)

0.075 (1.90)

0.189 (4.80)

0.173 (4.40)

0.049 (1.24)

0.037 (0.94)

0.053 (1.35)

0.041 (1.05)

0.030 (0.75) NOM.

0.084 (2.13) NOM.

0.155 (3.94)

NOM.

Mounting Pad Layout

0.268

(6.80)

0.186 (4.72)

MIN.

0.050 (1.27)

MIN.

0.041

(1.04)

0.055 (1.40)

MIN.

0.189 (4.80)

MIN.

0.187 (4.75)

0.175 (4.45)

0.262 (6.65)

0.250 (6.35)

0.242 (6.15)

0.238 (6.05)

0.171 (4.35)

0.167 (4.25)

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Revision: 12-Mar-12 1Document Number: 91000

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