MMBTA55LSeries, MMBTA56LSeries, SMMBTA56LSeries Driver Transistors PNP Silicon http://onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 CASE 318 STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage MMBTA55 MMBTA56, SMMBTA56 VCEO Collector -Base Voltage MMBTA55 MMBTA56, SMMBTA56 VCBO Emitter -Base Voltage VEBO -4.0 Vdc IC -500 mAdc Collector Current - Continuous Vdc -60 -80 1 BASE 2 EMITTER Vdc -60 -80 MARKING DIAGRAM 2xx M G G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C PD RqJA PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 1 2xx = Device Code x = H for MMBTA55LT1G xx = GM for MMBTA56LT1G, SMMBTA56LT1G M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 7 1 Publication Order Number: MMBTA55LT1/D MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 3) (IC = -1.0 mAdc, IB = 0) MMBTA55 MMBTA56, SMMBTA56 V(BR)CEO Emitter -Base Breakdown Voltage (IE = -100 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = -60 Vdc, IB = 0) ICES Collector Cutoff Current (VCB = -60 Vdc, IE = 0) MMBTA55 (VCB = -80 Vdc, IE = 0) MMBTA56, SMMBTA56 ICBO Vdc -60 -80 - - -4.0 - - -0.1 Vdc mAdc mAdc - -0.1 - -0.1 100 100 - - - -0.25 - -1.2 50 - ON CHARACTERISTICS DC Current Gain (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) hFE Collector -Emitter Saturation Voltage (IC = -100 mAdc, IB = -10 mAdc) VCE(sat) Base -Emitter On Voltage (IC = -100 mAdc, VCE = -1.0 Vdc) VBE(on) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (Note 4) (IC = -100 mAdc, VCE = -1.0 Vdc, f = 100 MHz) fT MHz 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN-ON TIME TURN-OFF TIME VCC -1.0 V VCC +VBB +40 V 5.0 ms 100 +40 V RL 100 RL OUTPUT +10 V 0 tr = 3.0 ns OUTPUT RB Vin * CS t 6.0 pF 5.0 mF RB Vin * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 200 100 VCE = -2.0 V TJ = 25C TJ = 25C 70 50 100 C, CAPACITANCE (pF) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series 70 50 Cibo 30 20 Cobo 10 30 7.0 20 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) 5.0 -0.1 -0.2 -200 Figure 2. Current-Gain -- Bandwidth Product 1.0 k 700 500 Figure 3. Capacitance TJ = 125C VCE = -1.0 V ts h FE, DC CURRENT GAIN t, TIME (ns) -50 -100 400 300 200 100 70 50 tf VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25C 30 20 10 -5.0 -7.0 -10 200 25C -55C 100 80 60 tr td @ VBE(off) = -0.5 V -50 -70 -100 -200 -300 -20 -30 IC, COLLECTOR CURRENT (mA) 40 -0.5 -1.0 -2.0 -500 Figure 4. Switching Time -500 1.1 VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 150C 25C -55C 0.1 0.01 -50 -100 -200 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) Figure 5. DC Current Gain 1 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) 0.001 0.01 0.1 0.9 0.8 -55C 0.7 25C 0.6 0.5 0.4 0.3 0.2 1 IC/IB = 10 1.0 150C 0.0001 IC, COLLECTOR CURRENT (A) 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 6. Collector Emitter Saturation Voltage vs. Collector Current Figure 7. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 3 1 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.2 1.1 VCE = 1 V 1.0 0.9 -55C 0.8 0.7 25C 0.6 0.5 150C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 -1.0 TJ = 25C -0.8 IC = -100 mA IC = -50 mA IC = -250 mA IC = -500 mA -0.6 -0.4 IC = -10 mA -0.2 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 8. Base Emitter Voltage vs. Collector Current Figure 9. Collector Saturation Region 1 -0.8 IC, COLLECTOR CURRENT (A) R qVB , TEMPERATURE COEFFICIENT (mV/ C) VBE(on), BASE-EMITTER VOLTAGE (V) MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series -1.2 -1.6 RqVB for VBE -2.0 -2.4 -2.8 -0.5 -1.0 -2.0 -10 -20 -50 -100 -200 -500 1 mS 1S 100 mS 10 mS 0.1 Thermal Limit 0.01 0.001 -5.0 -50 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 10. Base-Emitter Temperature Coefficient Figure 11. Safe Operating Area ORDERING INFORMATION Package Type Shipping MMBTA55LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBTA55LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel MMBTA56LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMBTA56LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBTA56LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel SMMBTA56LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device Order Number For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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