MJEV70 thee MJEI72 PNP (suicon) MJE180 th. MJEI82 NPN COMPLEMENTARY PLASTIC SILICON POWER TRANSISTORS . . . designed for low power audio amplifier and low current, high speed switching applications. Collector-Emitter Sustaining Voltage VCEOl(sus) = 40 Vde MJE170, MJE180 = 60 Vde MJE171, MJE181 = 80 Vdc MJE172, MJE182 DC Current Gain hee = 30 (Min) @ Ic = 0.5 Ade = 12 (Min) @ Ic = 1.5 Ade Current-Gain Bandwidth Product fy = 50 MHz (Min) @ Ic = 100 mAdc @ Annular Construction for Low Leakages ICBO = 100 nA (Max) @ Rated Vcg 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40-60-80 VOLTS 12.5 WATTS MAXIMUM RATINGS MJE170] MJE171] MJE172 Rating Symbol! MJE180| MJE181{ MJE182 Unit Collector-Base Voltage VcoB 60 80 100 Vde Cotlector-Emitter Voltage VcEO 40 60 80 Vde Emitter-Base Voltage Vea | ~_ 7.0 Vde Collector Current Continuous le _ _ 3.0 Adc Peak _ 6.90 Base Current ig 10 Adc Total Device Dissipation @ Ta = 25C Pp $15 ee Watts Derate above 25C + 0.012 + | w/c Total Device Dissipation @ Tc = 25C PD 12.5 Watts Derate above 25C - 0.1 ~_- | w/c Operating and Storage Junction Ty.Tstg) ~ -65 to +150 = c Temperature Range THERMAL CHARACTERISTICS Characteristic Symbot Max Unit Thermal Resistance, Junction to Case 85C 10 Sciw Thermai Resistance, Junction to 8A 83.4 ciw Ambient Tate 2814 2.412 2010 1.88.0 1.26.0 POWER DISSIPATION (WATTS} Po. 20 40 60 FIGURE 1 POWER DERATING 80 100 120 140 160 T, TEMPERATURE (C) c oa N n = ne } f d+ a, | ria] t = 4, s D J -wighe [FP STYLE! - PIN 1, EMITT ESF c 2. COLLECTOR M TF 3. BASE CASE 77-03 475