MBRF10H45-E3/45 - Vishay [General Semiconductor]

MBR(F,B)10H35 thru MBR(F,B)10H60

Vishay General Semiconductor

Document Number: 88780

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

Schottky Barrier Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 260 °C, 40 s (for TO-220AC and

ITO-220AC package)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters or polarity protection application.

MECHANICAL DATA

Case: TO-220AC, ITO-220AC, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

IF(AV) 10 A

VRRM 35 V to 60 V

IFSM 150 A

VF0.55 V, 0.61 V

IR100 µA

TJ max. 175 °C

CASE

PIN 2

PIN 1

TO-220AC

MBR10Hxx

ITO-220AC

MBRF10Hxx

MBRB10Hxx

HEATSINK

PIN 1

PIN 2

PIN 1

TO-263AB

MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL MBR10H35 MBR10H45 MBR10H50 MBR10H60 UNIT

Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V

Working peak reverse voltage VRWM 35 45 50 60 V

Maximum DC blocking voltage VDC 35 45 50 60 V

Maximum average forward rectified current (Fig. 1) IF(AV) 10 A

Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L = 10 mH EAS 80 mJ

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load IFSM 150 A

Peak repetitive reverse current at tp = 2.0 µs, 1 kHz IRRM 1.0 0.5 A

Peak non-repetitive reverse energy (8/20 µs waveform) ERSM 20 10 mJ

Electrostatic discharge capacitor voltage human body model:

C = 100 pF, R = 1.5 kΩ VC 25 kV

Voltage rate of change (rated VR) dV/dt 10 000 V/µs

MBR(F,B)10H35 thru MBR(F,B)10H60

Vishay General Semiconductor

www.vishay.com For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88780

Revision: 19-May-08

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ≤ 40 ms

Note:

(1) Automotive grade AEC Q101 qualified

Operating junction temperature range TJ - 65 to + 175 °C

Storage temperature range TSTG - 65 to + 175 °C

Isolation voltage (ITO-220AC only)

from terminal to heatsink t = 1 min VAC 1500 V

MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL MBR10H35 MBR10H45 MBR10H50 MBR10H60 UNIT

ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL

MBR10H35

MBR10H45

MBR10H50

MBR10H60 UNIT

TYP. MAX. TYP. MAX.

Maximum instantaneous forward voltage (1)

IF = 10 A

IF = 20 A

TJ = 25 °C

TJ = 125 °C

TJ = 25 °C

TJ = 125 °C

0.49

0.62

0.63

0.55

0.75

0.68

0.57

0.68

0.71

0.61

0.85

0.71

Maximum reverse current at rated VR (2) TJ = 25 °C

TJ = 125 °C IR -

4.0

100

2.0

100

µA

THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL MBR MBRF MBRB UNIT

Maximum thermal resistance RθJC 2.0 4.0 2.0 °C/W

ORDERING INFORMATION (Example)

PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE

TO-220AC MBR10H45-E3/45 1.80 45 50/tube Tube

ITO-220AC MBRF10H45-E3/45 1.94 45 50/tube Tube

TO-263AB MBRB10H45-E3/45 1.33 45 50/tube Tube

TO-263AB MBRB10H45-E3/81 1.33 81 800/reel Tape and reel

TO-220AC MBR10H45HE3/45 (1) 1.80 45 50/tube Tube

ITO-220AC MBRF10H45HE3/45 (1) 1.94 45 50/tube Tube

TO-263AB MBRB10H45HE3/45 (1) 1.33 45 50/tube Tube

TO-263AB MBRB10H45HE3/81 (1) 1.33 81 800/reel Tape and reel

MBR(F,B)10H35 thru MBR(F,B)10H60

Vishay General Semiconductor

Document Number: 88780

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Figure 1. Forward Current Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

Figure 3. Typical Instantaneous Forward Characteristics

250 50 75 100 125 150 175

MBRF

MBR, MBRB

Average Forward Current (A)

Case Temperature (°C)

101 100

100

125

150

175

= T

max.

8.3 ms Single Half Sine-Wave

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

0.01

0.1

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.80.9 1.0 1.1

100

MBR10H35 - MBR10H45

MBR10H50 - MBR10H60

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

Figure 4. Typical Reverse Characteristics

Figure 5. Typical Junction Capacitance

Figure 6. Typical Transient Thermal Impedance

020 6040 10080

0.0001

0.001

0.1

0.01

100

MBR10H35 - MBR10H45

MBR10H50 - MBR10H60

MBR10H35 - MBR10H45

MBR10H50 - MBR10H60

MBR10H35 - MBR10H45

MBR10H50 - MBR10H60

MBR10H35 - MBR10H45

MBR10H50 - MBR10H60

MBR10H35 - MBR10H45

MBR10H50 - MBR10H60

MBR10H35 - MBR10H45

MBR10H50 - MBR10H60

MBR10H35 - MBR10H45

MBR10H50 - MBR10H60

MBR10H35 - MBR10H45

MBR10H50 - MBR10H60

MBR10H35 - MBR10H45

MBR10H50 - MBR10H60

MBR10H35 - MBR10H45

MBR10H50 - MBR10H60

MBR10H35 - MBR10H45

MBR10H50 - MBR10H60

= 150 °C

= 125 °C

= 25 °C

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (mA)

01 100

1000

10 000

100

MBR10H35 - MBR10H45

MBR10H50 - MBR10H60

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

Reverse Voltage (V)

Junction Capacitance (pF)

0.01 1010.1

0.1

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

MBR(F,B)10H35 thru MBR(F,B)10H60

Vishay General Semiconductor

www.vishay.com For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88780

Revision: 19-May-08

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-220AC

CASE

PIN2

PIN1

0.635 (16.13)

0.625 (15.87)

0.415 (10.54) MAX.

0.154 (3.91) DIA.

0.148 (3.74) DIA.

0.113 (2.87)

0.103 (2.62)

0.370 (9.40)

0.360 (9.14)

0.160 (4.06)

0.140 (3.56)

0.057 (1.45)

0.045 (1.14)

0.105 (2.67)

0.095 (2.41) 0.037 (0.94)

0.027 (0.68)

0.205 (5.20)

0.195 (4.95)

0.022 (0.56)

0.014 (0.36)

1.148 (29.16)

1.118 (28.40)

0.560 (14.22)

0.530 (13.46)

0.110 (2.79)

0.100 (2.54)

0.350 (8.89)

0.330 (8.38)

0.145 (3.68)

0.135 (3.43)

0.603 (15.32)

0.573 (14.55)

0.055 (1.39)

0.045 (1.14)

0.185 (4.70)

0.175 (4.44)

ITO-220AC

0.025 (0.64)

0.015 (0.38)

0.404 (10.26)

0.384 (9.75)

0.076 (1.93) REF.

45° REF.

0.600 (15.24)

0.580 (14.73)

0.560 (14.22)

0.530 (13.46)

0.035 (0.89)

0.025 (0.64)

0.205 (5.21)

0.195 (4.95)

0.191 (4.85)

0.171 (4.35)

0.057 (1.45)

0.045 (1.14)

0.671 (17.04)

0.651 (16.54)

0.028 (0.71)

0.020 (0.51)

0.110 (2.79)

0.100 (2.54)

7° REF.

0.350 (8.89)

0.330 (8.38)

0.140 (3.56) DIA.

0.125 (3.17) DIA.

0.135 (3.43) DIA.

0.122 (3.08) DIA.

0.110 (2.79)

0.100 (2.54)

0.190 (4.83)

0.170 (4.32)

TO-263AB

Mounting Pad Layout

0.670 (17.02)

0.591 (15.00)

0.105 (2.67)

0.095 (2.41)

0.08 (2.032) MIN.

0.15 (3.81) MIN.

0.33 (8.38) MIN.

0.42 (10.66) MIN.

0.140 (3.56)

0.110 (2.79)

0.021 (0.53)

0.014 (0.36)

0.110 (2.79)

0.090 (2.29)

0 to 0.01 (0 to 0.254)

0.055 (1.40)

0.047 (1.19)

0.055 (1.40)

0.045 (1.14)

0.190 (4.83)

0.160 (4.06)

0.205 (5.20)

0.195 (4.95)

0.624 (15.85)

0.591 (15.00)

0.037 (0.940)

0.027 (0.686)

0.105 (2.67)

0.095 (2.41)

0.360 (9.14)

0.320 (8.13)

0.411 (10.45)

0.380 (9.65)

0.245 (6.22)

MIN.

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Revision: 12-Mar-12 1Document Number: 91000

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