PLANETA JS , 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia Ph./Fax: +7–816–2231736
E-mail: planeta@novgorod.net
© July 2000 Re v 1 http://www.novgor od.n et/~planeta
PLANETA
The RF Line
NPN Silicon
High-Frequency Transistor
DESCRIPTION
The BFR91A is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
This small-signal p lastic transistor offers superior quality and
performance at low cost.
FEATURES
High Gain -Ba n d width Products
fT= 6.0 GHz (Ty p ) @ 3 0 mA
Low Noise Figure
NF= 1.6 dB (Typ) @ 800 MHz
High Gain
GPS= 13.0 dB (Typ) @ 800 MHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Rating Symbol Value Unit
Collector- Emitter Voltage VCEO 12 V
Collector- Base Voltage VCBO 20 V
Emitter- Base Voltage VEBO 2 V
Collector C ur rent IC 50 mA
Power Dissipation Ptot 300 mW
Junction Temperature TJMAX 150 °C
Operating Junction Temperature Range TJ -45 to +70 °C
Storage Temp erat u re Range TSTG -65 to +150 °C
THERMAL CHARACTERISTIC
Thermal Resistance, Junction to Case RΘJC 400 °C/W
ORDERING INFORMATION
Device Marking Package Quantity Packing Style
BFR91A BFR91A SOT-37 1 Kpcs / pl astic bags In bulk
BFR91A
SOT37
JEDEC TO-50
EIAJ –
GOST KT-29
Weight: 0.2g
1
2
3
1 – Base
2 – Collector
3 – Emitter
BFR91A
Ph./Fax: +7–816–2231736 PLANETA JSC, 2 /13 Fedorovsky Ruc hei, Veliky Novgorod, 173004, Russia
E-mail: planeta@novgorod.net
http://www.novgorod.net/~planeta © July 2000 Rev 1
2
ELECTRICAL CHARACTERISTICS (TA = 25 °C unl ess otherwise noted)
Characteristic Symbol Min Typ Max Unit
DC CHARACTERISTICS
Collect or Cutoff Current,
IE= 0mA, VCB=10V ICBO
–
–
100 nA
Emitter Cut off Current,
IC= 0mA, VEB= 2V IEBO
–
–
10 µA
Collector – Emitter Breakdown Voltage,
IC= 1mA, IB= 0mA V(BR)CEO
12
–
– V
DC Curr e n t Gain,
IE=30mA, VCB= 5V hFE
50
120
300 –
Collector – Emitter Saturation Voltage,
IC= 1mA, IB= 0mA VCE(sat)
–
100
400 mV
AC CHARACTERIST I C S
Transition Frequency,
IC=30mA, VCB= 5V, f=300MHz fT
4.5
6.0
– GHz
Collector-Base Capacitance,
IE= 0mA, VCB=10V, f= 1MHz Ccb
–
0.4
0.9 pF
Noise Figure,
IE= 5mA, VCE= 8V, f=800MHz NF
–
1.6
2.0 dB
Power Gain,
IE=30mA, VCE= 8V, f=800MHz GPS
12.0
13.0
– dB
hFE CLASSIFICATION
Class K H F E
hFE 50 to 300 50 to 100 80 to 160 125 to 250
TIPICAL CHARACTERISTICS (TA = 25 °C unl ess othe rwise noted)
Figure 1. Total Power Dissipation vs.
Ambient Temperature Figure 2. Collector – Base Capacitance vs.
Collector – Base Voltage
0
0,2
0,4
0,6
0,8
1
0 5 10 15 20
VCB - Collector Base Voltage (V)
Ccb - Collector Base Capacitance (p
F
VCB=10V
f=1MHZ
0
50
100
150
200
250
300
350
0 20 40 60 80 100 120 140 160
Tamb - Ambient Temperature (°C)
Ptot - Total Power Dissipation (m
W
BFR91A
PLANETA JS , 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia Ph./Fax: +7–816–2231736
E-mail: planeta@novgorod.net
© July 2000 Re v 1 http://www.novgor od.n et/~planeta
3
TIPICAL CHARACTERISTICS (TA = 25 °C unl ess othe rwise noted)
Figur e 3. Transition Frequency vs.
Emitter Cur re nt Figur e 4. Noise Figure vs.
Emitter Current
Figure 5. Power Gain vs.
Emitter Current Figure 6. DC Current Gain vs.
Emitter Current+
0
2
4
6
8
10
12
14
0 5 10 15 20 25 30 35 40
IE - Emitter Current (mA
GPS - Power Gain (dB
)
VCE=8V
f=800MHZ
0
20
40
60
80
100
120
140
0 5 10 15 20 25 30
IE - Emitter Current (mA
hFE - DC Current Gai
n
VCB=5V
0
0,5
1
1,5
2
2,5
3
3,5
0 5 10 15 20 25 30 35 40
IE - Emitter Current (mA
NF - Noise Figure (dB
)
VCE=8V
f=800MHZ
0
1
2
3
4
5
6
7
0 5 10 15 20 25 30 35 40 45 50
IE - Emitter Current (mA)
fT - Transition Frequency (GH
z
VCB=5V
f=300MHZ
BFR91A
Ph./Fax: +7–816–2231736 PLANETA JSC, 2/1 3 Fe do rovsky Ruc h ei, Veliky Nov gorod, 173004, Russia
E-mail: planeta@novgorod.net
http://www.novgorod.net/~planeta © July 2000 Rev 1
4
PACKAGE DIMENSIONS in mm
PLASTIC CASE KT-29
