Rev.
2
,
Feb
.
201
1
N
-
Channel
8
0V Power
MOSFET
LTP75N08P
01
Note: a. Pulse width limited by safe operating area
b. Starting Tj=25℃, ID=30A, VDD=37.5V, L=2mH
Parameter Symbol
Limit Unit
Drain-Source Voltage V
DSS
80 V
Gate-Source Voltage V
GSS
±25 V
T
C
=25℃ 80
Continuous Drain Current T
C
=100℃ I
D
75
A
Pulsed Drain Current
a
I
DM
300 A
Source-drain Current I
SD
80 A
T
C
=25℃ 273
Power Dissipation T
C
=100℃ P
D
136
W
Operating Junction and Storage Temperature Range T
J,
T
stg
-55 to 175 ℃
Avalanche Energy with Single Pulse
b
E
AS
1000 mJ
Thermal Resistance-Junction to Case R
θJC
0.55 ℃/W
Absolute Maximum Ratings (T
A
=25℃ Unless Otherwise Noted)
B
VDSS
= 80 V,
R
DS(ON )
= 9.5 mΩ,
Typ = 8.5 mΩ
ID = 80 A
Features:
Avalanche Rugged Technology
Rugged Gate Oxide Technology
High di/dt Capability
Improved Gate Charge
Application
Switching
DC-DC converter and DC motor control
UPS
Rev.
2
,
Feb
.
201
1
N
-
Channel
8
0V Power
MOSFET
LTP75N08P
02
Symbol
Parameter
Limit
Min Typ Max Unit
STATIC
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250μA 80 V
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
, I
D
=250μA 2 4 V
I
GSS
Gate-Body Leakage V
GS
=±25V ±100 nA
I
DSS
Zero Gate Voltage Drain Current V
DS
=Max Rating, V
GS
=0V 1 μA
R
DS(ON)
Drain-Source On-Resistance* V
GS
=10V, I
D
=40A 8.5 9.5 mΩ
DYNAMIC
Qg Total Gate Charge
70 98
Qgs Gate-Source Charge
19
Qgd Gate-Drain Charge
V
DD
=30V, V
GS
=10V, I
D
=40A
22
nC
Rg Gate Resistance f=1MHz
1.5 Ω
C
iss
Input Capacitance
3450
C
oss
Output Capacitance
470
C
rss
Reverse Transfer Capacitance
V
DS
=30V, V
GS
=0V,
f=1MHz
190
pF
t
d(on)
Turn-On Delay Time
23
t
r Turn-On Rise Time
12
t
d(off)
Turn-Off Delay Time
77
t
f
Turn-Off Fall Time
V
GS
=10V, R
L
=30Ω
V
DD
=30V, R
G
=6Ω, I
DS
=1A
69
ns
Symbol
Characteristic Min.
Typ.
Max.
Units
Test Condition
I
S
Continuous Source current ------
------
80
I
SM
Pulsed Source Current --- 300
Integral reverse PN diode in The
MOSFET
V
SD
Diode Forward voltage------------- 0.8 1.1 V I
S
=20A , V
GS
= 0V
Trr Reverse Recover Time 55 nS
Qrr Reverse Recover Charge 117
nC I
DS
=40A, dl
SD
/dt=100A/µs
Electrical Characteristics (TA =25℃ Unless Otherwise Specified)
Source-Drain Diode Ratings and Characteristics
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
A
Rev.
2
,
Feb
.
201
1
N
-
Channel
8
0V Power
MOSFET
LTP75N08P
03
Typical Characteristics (T
J
=25℃
℃℃
℃ Noted)
Rev.
2
,
Feb
.
201
1
N
-
Channel
8
0V Power
MOSFET
LTP75N08P
04
Typical Characteristics (T
J
=25℃
℃℃
℃ Noted)
Rev.
2
,
Feb
.
201
1
N
-
Channel
8
0V Power
MOSFET
LTP75N08P
05
Typical Characteristics (T
J
=25℃
℃℃
℃ Noted)
Rev.
2
,
Feb
.
201
1
N
-
Channel
8
0V Power
MOSFET
LTP75N08P
06
Test Circuit and Waveform
Rev.
2
,
Feb
.
201
1
N
-
Channel
8
0V Power
MOSFET
LTP75N08P
07
Package Dimension
Rev.
2
,
Feb
.
201
1
N
-
Channel
8
0V Power
MOSFET
LTP75N08P
08
Important Notice and Disclaimer
LSC reserves the right to make changes to this document and its products and
specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design, purchase or use.
LSC makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does LSC assume any liability for application
assistance or customer product design. LSC does not warrant or accept any liability
with products which are purchased or used for any unintended or unauthorized
application.
No license is granted by implication or otherwise under any intellectual property rights
of LSC.
LSC products are not authorized for use as critical components in life support devices
or systems without express written approval of LSC.
