©2008 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FCP11N60F/FCPF11N60F Rev. A1
FCP11N60 F/FCPF11N60F 600V N-Channel MOSFET
FCP11N60F
/FCPF11N60F
600V N-Channel MOSFET
Features
• 650V @T
J
= 150°C
•Typ. R
DS(on)
= 0.32Ω
• Fast Recovery Type ( t
rr
= 120ns)
• Ultra Low Gate Charge (typ. Q
g
= 40nC)
• Low Effective Output Capacitance (typ. C
oss
eff.=95pF)
• 100% avalanche tested
Description
SuperFETTM is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
Absolute Maximum Ratings
* Drain current limited by maximum junction termperature.
Thermal Charac t eris tics
!"
!
!
!
"
"
"
!"
!
!
!
"
"
"
S
D
G
TO-220
GS
D
TO-220F
GS
D
Symbol Parameter FCP11N60F FCPF11N60F Units
I
D
Drain Current - Continuous (T
C
= 25°C) 11 11 * A
- Continuous (T
C
= 100°C) 7 7 * A
I
DM
Drain Current - Pulsed
(Note 1)
33 33 * A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
340 mJ
I
AR
Avalanche Current
(Note 1)
11 A
E
AR
Repetitive Avalanche Energy
(Note 1)
12.5 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C) 125 36 * W
- Derate above 25°C 1.0 0.29 * W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter FCP11N60F FCPF11N60F Units
R
θJC
Thermal Resistance, Junction-to-Case 1.0 3.5 °C/W
R
θCS
Thermal Resistance, Case-to-Sink 0.5 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
December 2008
SuperFET
TM
•RoHS Compliant
2www.fairchildsemi.com
FCP11N60F/FCPF11N60F Rev. A1
FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I
AS
= 5.5A, V
DD
= 50V, R
G
= 25 Ω, Starting T
J
= 25°C
3. I
SD
≤ 11A, di/dt ≤ 200A/µs, V
DD
≤ BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Device Marking Device Package Reel Size Tape Width Quantity
FCP11N60F FCP11N60F TO-220 -- -- 50
FCPF11N60F FCPF11N60F TO-220F -- -- 50
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 µA, T
J
= 25°C 600 -- -- V
V
GS
= 0 V, I
D
= 250 µA, T
J
= 150°C -- 650 -- V
∆BV
DSS
/
∆T
J
Breakdown Voltage Temperature
Coefficient I
D
= 250 µA, Referenced to 25°C -- 0.6 -- V/°C
BV
DS
Drain-Source Avalanche Breakdown
Voltage V
GS
= 0 V, I
D
= 11 A -- 700 -- V
I
DSS
Zero Gate Voltage Drain Current V
DS
= 600 V, V
GS
= 0 V -- -- 10 µA
V
DS
= 480 V, T
C
= 125°C -- -- 100 µA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -30 V, V
DS
= 0 V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA3.0--5.0V
R
DS(on)
Static Drain-Source
On-Resistance V
GS
= 10 V, I
D
= 5.5 A -- 0.32 0.38 Ω
g
FS
Forward Transconductance V
DS
= 40 V, I
D
= 5.5 A
(Note 4)
-- 9.7 -- S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 1148 1490 pF
C
oss
Output Capacitance -- 671 870 pF
C
rss
Reverse Transfer Capacitance -- 63 82 pF
C
oss
Output Capacitance V
DS
= 480 V, V
GS
= 0 V,
f = 1.0 MHz -- 35 -- pF
C
oss
eff. Effective Output Capacitance V
DS
= 0V to 480 V, V
GS
= 0 V -- 95 -- pF
Switching Characteristics
t
d(on)
Turn-On Delay Time V
DD
= 300 V, I
D
= 11 A,
R
G
= 25 Ω
(Note 4, 5)
-- 34 80 ns
t
r
Turn-On Rise Time -- 98 205 ns
t
d(off)
Turn-Off Delay Time -- 119 250 ns
t
f
Turn-Off Fall Time -- 56 120 ns
Q
g
Total Gate Charge V
DS
= 480 V, I
D
= 11 A,
V
GS
= 10 V
(Note 4, 5)
-- 40 52 nC
Q
gs
Gate-Source Charge -- 7.2 -- nC
Q
gd
Gate-Drain Charge -- 21 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 33 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 11 A -- -- 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
S
= 11 A,
dI
F
/ dt = 100 A/µs
(Note 4)
-- 120 -- ns
Q
rr
Reverse Recovery Charge -- 0.8 -- µC
3www.fairchildsemi.com
FCP11N60F/FCPF11N60F Rev. A1
FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Typ ical Perf orman ce C hara cteri stic s
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
-1
10
0
10
1
10
2
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bo tt o m : 5.5 V
* Notes :
1. 250
µ
s Pulse Te st
2. T
C
= 25
o
C
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
246810
10
-1
10
0
10
1
* N ot e
1. V
DS
= 40V
2. 250
µ
s Pulse Test
-55
o
C
150
o
C
25
o
C
I
D
, Drain Current [A]
V
GS
, G ate -Source V o ltage [V]
0 5 10 15 20 25 30 35 40
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
= 20V
V
GS
= 10V
* Note : T
J
= 25
o
C
R
DS(ON)
[
Ω
],
Drain-Source On-Resistance
I
D
, Dra in C u rren t [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
10
-1
10
0
10
1
25
o
C
150
o
C
* No tes :
1. V
GS
= 0V
2. 250
µ
s Pulse Test
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain Voltage [V]
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Notes :
1. VGS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
V
DS
, Drain-Source V oltage [V]
0 5 10 15 20 25 30 35 40 45
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 10 0V
V
DS
= 400V
* Note : I
D
= 11A
V
GS
, Gate-Source Voltage [V]
Q
G
, To ta l G a te C h a rg e [n C ]
4
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FCP11N60F/FCPF11N60F Rev. A1
FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Typ ical Perf orman ce C hara cteri stic s
(Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9-1. Safe Operating Area Figure 9-2. Safe Operating Area
for FCP11N60F for FCPF11N60F
Figure 10. Maximum Drain Current vs. Case Temperature
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* N ote s :
1 . V
GS
= 0 V
2 . I
D
= 250
µ
A
BV
DSS
, (Norm al ized)
Drain- So ur c e Br eakdown Volta ge
T
J
, Junction Tem perature [
o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* No te s :
1 . V
GS
= 10 V
2 . I
D
= 5.5 A
R
DS(ON)
, (Nor m a lized)
Drai n-Source On-Resistance
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
O p erat ion in This Area
is Limited by R
DS(on)
DC 10 ms
1 ms
100 us
* Notes :
1 . T
C
= 25
o
C
2 . T
J
= 150
o
C
3. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100 us
DC100 ms
10 ms
1 ms
Operation in This Ar ea
is Limited by R
DS(on)
* No t es :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Sing le Pulse
I
D
, Drai n Current [A]
V
DS
, Drain-Source Voltage [V]
25 50 75 100 125 150
0.0
2.5
5.0
7.5
10.0
12.5
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]
5
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FCP11N60F/FCPF11N60F Rev. A1
FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Typ ical Perf orman ce C hara cteri stic s
(Continued)
Figure 11-1. Transient Thermal Response Curve for FCP11N60F
Figure 11-2. Transient Thermal Response Curve for FCPF11N60F
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
* N o tes :
1 . Z
θJC
(t) = 1.0
o
C/W Max.
2 . Du ty Fa c to r , D=t
1
/t
2
3 . T
JM
- T
C
= P
DM
* Z
θJC
(t)
s in gle p u lse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θ
JC
(t), Thermal Res ponse
t
1
, S quare Wave Pulse Duration [sec]
t
1
P
DM
t
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
* N otes :
1. Z
θJC
(t) = 3.5
o
C/W Max.
2 . Du ty F a c t o r, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θJC
(t)
s ingle pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θ
JC
(t), Thermal Response
t
1
, S quare Wave Pulse Duration [sec]
t
1
P
DM
t
2
6
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FCP11N60F/FCPF11N60F Rev. A1
FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Charge
V
GS
10V Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
V
GS
10V Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50KΩ
200nF
12V
Same Type
as DUT
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
E
AS
=LI
AS2
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
L
I
D
t
p
E
AS
=LI
AS2
----
2
1
E
AS
=LI
AS2
----
2
1
----
2
1--------------------
BV
DSS
-V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
LL
I
D
I
D
t
p
Gate Charge Test Circuit & Wa veform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
7
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FCP11N60F/FCPF11N60F Rev. A1
FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Wav eforms
DUT
V
DS
+
_
Driver
R
G
Same Typ e
as DUT
V
GS
• dv/dt contro lled by R
G
•I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Per i o d
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Typ e
as DUT
V
GS
• dv/dt contro lled by R
G
•I
SD
controlled by pulse period
V
DD
LL
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Per i o d
--------------------------
D = Gate Pulse Width
Gate Pulse Per i o d
--------------------------
8
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FCP11N60F/FCPF11N60F Rev. A1
FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Mechanical Dimensions
Dimensions in Millimeters
TO - 220
9
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FCP11N60F/FCPF11N60F Rev. A1
FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
Mechanical Di mens ions
(Continued)
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30 ±0.10
15.80 ±0.20
15.87 ±0.20
6.68 ±0.20
9.75 ±0.30
4.70 ±0.20
10.16 ±0.20
(1.00x45°)
2.54 ±0.20
0.80 ±0.10
9.40 ±0.20
2.76 ±0.20
0.35 ±0.10
ø3.18 ±0.10
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
0.50 +0.10
–0.05
TO-220F
Dimensions in Millimeters
Rev. I37
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The following includes registe red and unregistered tr ademarks and service marks, owned by Fairchild Semiconductor and/or its global sub sidiaries, and is not
intended to be an exhaustive list of all such trademarks.
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporatio n, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used he r ein:
1. Life support devices or systems are devices or systems which, (a) are
intended for sur gical implant i nto t he body or (b ) support or sustai n life,
and (c) whose fai lure to perform when properly u sed in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of t he user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™ ®
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production Datasheet contains preliminary data; supple mentary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains fin al specifications. Fairchild Semicondu ctor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datashe et contains specifications on a product that is discontinued by Fairch ild
Semiconductor. The datasheet is for reference information only.
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10
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FCP11N60F/FCPF11N60F Rev. A1
FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
