© 2010 IXYS CORPORATION, All Rights Reserved DS100249A(4/16)
VDSS = 500V
ID25 = 52A
RDS(on)
120m
trr(typ) = 400ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 500 V
VDGR TJ= 25C to 150C, RGS = 1M500 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C52A
IDM TC= 25C, Pulse Width Limited by TJM 150 A
IATC= 25C52A
EAS TC= 25C 1.5 J
dv/dt IS IDM, VDD VDSS,T
J 150C 10 V/ns
PD TC= 25C 960 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque 1.13/10 Nm/lb.in.
Weight 5.5 g
IXTQ480P2
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 500 V
VGS(th) VDS = VGS, ID = 250μA 3.0 5.0 V
IGSS VGS = 30V, VDS = 0V  100 nA
IDSS VDS = VDSS, VGS = 0V 5 A
TJ = 125C 50 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 120 m
PolarP2TM
Power MOSFET
Features
Avalanche Rated
Fast Intrinsic Diode
Dynamic dv/dt Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
G = Gate D = Drain
S = Source Tab = Drain
TO-3P
G
DSTab
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTQ480P2
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 30 48 S
Ciss 6800 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 680 pF
Crss 44 pF
td(on) 22 ns
tr 11 ns
td(off) 40 ns
tf 8 ns
Qg(on) 108 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 37 nC
Qgd 38 nC
RthJC 0.13 C/W
RthCS 0.25 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 52 A
ISM Repetitive, Pulse Width Limited by TJM 204 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 400 ns
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IF = 26A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External)
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.