PJ2N5551
NPN Epitaxial Silicon Transistors
1-3 2002/01.rev.A
AMPLIFIER TRANSISTO R
• Collector-Base Voltage: VCEO=160V
• Collector Dissipation Pc=0.625W(Tc=25℃)
Device Operating Temperature Package
PJ2N5551CT -20℃～+85℃ TO-92
• Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
Characteristic Symbol Rating Unit
Collector-base Voltage
Collector-Emitter Voltage
Emitter-base Voltage
Collector Current (DC)
* Collector Dissipation
Junction Temperature
Storage T emperature
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
180
160
5
0.6
0.625
150
-55~150
V
V
V
A
W
℃
℃
Characteristic Symbol Test Condition Min Typ Max Unit
Collector-Base Breakdown Voltage
Collector- Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth product
Noise Figure
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HEF1
HEF2
HEF3
VCE(SAT)
VBE(SAT)
Cob
f
T
NF
Ic=100μA,IE=0
Ic=1mA,IB=0
IE=10μA,IC=0
VCB=120V,IE=0
VEB=4V,Ic=0
VCE=5V,IC=1 mA
VCE=5V,IC=10mA
VCE=5V,IC=50mA
Ic=10 mA,IB=1 mA
Ic=50 mA,IB=5 mA
Ic=10 mA,IB=1 mA
Ic=50 mA,IB=5 mA
VCB=20V,IE=0, f=1MHz
VCE=10V,Ic=10Ma,f=100 MHz
VCE=5V,IC=250μA
Rs=1KΩ,f=10Hz to 15.7KHz
180
160
6
80
80
30
100
50
50
0.15
0.2
1
1
6
300
8
V
V
V
nA
nA
V
V
V
V
PF
MHz
dB
TO-92
ABSOLUTE MAXIMUM RATINGS (T a = 25℃)
ELECTRICAL CH ARACTERISTICS (T a=25℃)
ORDERING INFORMATION
Pin : 1. Emitter
2.Base
3.Collector
PJ2N5551
NPN Epitaxial Silicon Transistors
2-3 2002/01.rev.A
DC CURRENT GAIN
CURRENT GAIN-BANDWIDTH PRODUCT
OUTPUT CAPACITANCE
BASE-EMITTER ON VOLTAGE
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURANION VOLTAGE
PJ2N5551
NPN Epitaxial Silicon Transistors
3-3 2002/01.rev.A
