HEXFET® Power MOSFET
PD - 9.1240C
8/25/97
lGeneration V Technology
lUltra Low On-Resistance
lDual P-Channel Mosfet
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lFast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
IRF7304
D1
D1
D2
D2
G1
S2
G2
S1
T op V iew
8
1
2
3
45
6
7
SO-8
Parameter Max. Units
ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ -4.5V -4.7
ID @ TA = 25°C Continuous Drain Current, V GS @ -4.5V -4.3
ID @ TA = 70°C Continuous Drain Current, V GS @ -4.5V -3.4 A
IDM Pulsed Drain Current -17
PD
@TA = 25°C Power Dissipation 2.0
Linear Derating Factor 0.016
VGS Gate-to-Source Voltage ±12 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ,
TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
W
W/°C
VDSS = -20V
RDS(on) = 0.090Ω
Thermal Resistance Ratings
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient––– 62.5 °C/W
IRF7304
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.012 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.090 VGS = -4.5V, ID = -2.2A
––– ––– 0.140 VGS = -2.7V, ID = -1.8A
VGS(th) Gate Threshold Voltage -0.70 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance 4.0 ––– ––– S VDS = -16V, ID = -2.2A
––– ––– -1.0 VDS = -16V, V GS = 0V
––– ––– -25 VDS = -16V, V GS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
QgTotal Gate Charge ––– ––– 22 ID = -2.2A
Qgs Gate-to-Source Charge ––– ––– 3.3 nC VDS = -16V
Qgd Gate-to-Drain ("Miller") Charge ––– – –– 9. 0 VGS = -4.5V, See Fig. 6 and 12
td(on) Turn-On Delay Time ––– 8.4 ––– VDD = -10V
trRise Time ––– 26 ––– ID = -2.2A
td(off) Turn-Off Delay Time ––– 51 ––– RG = 6.0Ω
tfFall Time ––– 33 ––– RD = 4.5Ω, See Fig. 10
Between lead tip
and center of die contact
Ciss Input Capacitance ––– 6 10 ––– VGS = 0V
Coss Output Capacitance ––– 310 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5
Notes:
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage –– – –– – -1.0 V TJ = 25°C, IS = -1.8A, VGS = 0V
trr Reverse Recovery Time –– – 56 84 ns TJ = 25°C, IF = -2.2A
Qrr Reverse RecoveryCharge ––– 71 110 µC di/dt = 100A/µs
ton Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -2.2A, di/dt ≤− 50A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
––– ––– -17
––– ––– -2.5 A
IGSS
IDSS Drain-to-Source Leakage Current
LSInternal Source Inductance –– – 6.0 –– –
LDInternal Drain Inductance –– – 4.0 –– – nH
ns
nA
µA
ΩRDS(ON) Static Drain-to-Source On-Resistance
S
D
G
S
D
G
IRF7304
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
0.1
1
10
100
0.01 0.1 1 10 100
D
DS
2 0µ s PU LSE WIDTH
T = 25 °C A
-I , Drain-to-So urce Current (A)
-V , Drain-to-Source Voltage (V )
J
VG S
TO P - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BO TTO M - 1.5 V
-1.5V
0.1
1
10
100
0.01 0.1 1 10 100
D
DS
20µs PULSE WIDT H
T = 150°C A
-I , Dra in-to-S ou rc e Curre nt (A)
-V , Dr ain-to-Sou rc e Volta ge (V )
J
VG S
TO P - 7.5 V
- 5 .0V
- 4 .0V
- 3 .5V
- 3 .0V
- 2 .5V
- 2 .0V
BO TTO M - 1.5 V
-1 .5V
0.1
1
10
100
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T = 25°C T = 150°C
JJ
GS
D
A
- I , Dra in- to - So u rc e Cu rr en t ( A)
-V , Gate-to-S o urce Voltage (V )
V = -1 5V
20µs PULS E WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , J u nc t ion T empera t ure (° C)
R , D ra in-to-S ou rc e O n Res istan ce
DS(on)
(Normalized)
A
I = -3 .6A
D
V = -4 .5 V
GS
IRF7304
Fig 7. Typical Source-Drain Diode
Forward Voltage Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
500
1000
1500
1 10 100
C, C apacitance (pF )
A
DS
-V , Drain-t o-Source Voltag e ( V)
V = 0 V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd d s
rs s gd
oss ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25
G
GS
A
FO R TEST CIRCUIT
SEE F IGURE 12
-V , G ate-to-Sou rce Voltag e (V)
Q , Tota l G a te C h arg e (nC )
I = - 2.2 A
V = -16V
D
DS
0.1
1
10
100
0.3 0.6 0.9 1.2 1.5
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Cu rrent (A)
-V , Sour c e-to- Dr ai n Vo ltage (V )
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
1ms
10ms
IRF7304
+
-
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
VDS
-4.5 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 9. Maximum Drain Current Vs.
Ambient Temperature Fig 10b. Switching Time Waveforms
RD
VGS
VDD
RGD.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
IRF7304
Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-4.5 V
IRF7304
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
*
VGS*
**
Peak Diode Recovery dv/dt Test Circuit
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 13. For P-Channel HEXFETS
IRF7304
Package Outline
SO8 Outline
SO8
Part Marking Information
EXAM PLE : TH IS IS AN IRF7 101
DATE CODE (YWW)
Y = LAST DIG IT OF THE YEAR
WW = WEEK
W AF ER
L OT CODE
(LAST 4 DIG ITS)
XXXX
BOTTOM
PART NUM BER
TOP
INTERNATIONAL
RECT IFIER
L OGO
F7101
312
K x 45°
C
8X
L
8X
θ
H
0.25 (.010) M A M
A
0.10 (.004)
B 8X
0.25 (.010) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
1.78 (.070)
8X
6.46 ( .255 )
1.27 ( .050 )
3X
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
θ
0° 8° 0° 8°
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
5
6
A1
e1
IRF7304
SO8
Dimensions are shown in millimeters (inches)
Tape & Reel Information
330.00
(12.992)
M AX.
14.4 0 ( .5 66 )
12.4 0 ( .4 88 )
NO TES :
1. CO NTRO LL ING DIME NS IO N : MIL L IME TE R.
2. OUT LIN E CON FORM S TO EIA-481 & EIA-541.
FE E D DIRE CTION
TE RMINA L NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CO NTR OLLING DIMENSION : MILLIMETER.
2. ALL DIMEN SION S ARE SHOWN IN MILLIMETERS(INCHES).
3. OU TLINE C ON FORMS TO EIA-481 & EIA-541.
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http://www.irf.com/ Data and specifications subject to change without notice. 8/97
