© 2018 IXYS CORPORATION, All Rights Reserved DS99921B(11/18)
PolarTM HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFA4N100P
IXFP4N100P
VDSS = 1000V
ID25 = 4A
RDS(on)
3.3
Features
International Standard Packages
Low RDS(on) and QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250A 1000 V
VGS(th) VDS = VGS, ID = 250A 3.0 6.0 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 10 A
TJ = 125C 750 A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1 3.3
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 1000 V
VDGR TJ= 25C to 150C, RGS = 1M1000 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C 4 A
IDM TC= 25C, Pulse Width Limited by TJM 8 A
IATC= 25C4 A
EAS TC= 25C 200 mJ
dv/dt IS IDM, VDD VDSS, TJ 150°C 10 V/ns
PDTC= 25C 150 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FCMounting Force (TO-263) 10..65 / 2.2..14.6 Nm/lb.in
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-263 2.5 g
TO-220 3.0 g
G = Gate D = Drain
S = Source Tab = Drain
TO-263 (IXFA)
G
S
D (Tab)
TO-220 (IXFP)
D (Tab)
S
GD
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA4N100P
IXFP4N100P
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS= 20V, ID = 0.5 • ID25, Note 1 1.8 3.0 S
RGi Gate Input Resistance 1.6
Ciss 1456 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 90 pF
Crss 16 pF
td(on) 24 ns
tr 36 ns
td(off) 37 ns
tf 50 ns
Qg(on) 26 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 9 nC
Qgd 12 nC
RthJC 0.83 C/W
RthCS TO-220 0.50 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 4 A
ISM Repetitive, Pulse Width Limited by TJM 16 A
VSD IF = IS, VGS = 0V, Note 1 1.3 V
trr 300 ns
IRM 5.30 A
QRM 0.34 μC
Note 1: Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
IF = 2A, VGS = 0V, -di/dt = 100A/s
VR = 100V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5 (External)
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e c
e1
e1 3X b2
e 3X b
EJECTOR
PIN
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
23
4
L3
A2
A1
e
ce
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
0.12 [3.0]
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA4N100P
IXFP4N100P
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0123456789101112
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5V
6V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
1
2
3
4
5
6
7
8
0 5 10 15 20 25 30 35
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
5V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
0 2 4 6 8 10121416182022242628
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 2A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 4A
I
D
= 2A
Fig. 5. R
DS(on)
Normalized to I
D
= 2A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
012345678
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125oC
T
J
= 25oC
Fig. 6. Maximum Drain Current vs. Case Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA4N100P
IXFP4N100P
IXYS REF: F_4N100P(45-744)7-3-13-B
Fig. 7. Input Admittance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
TJ
= 125
o
C
25
o
C
- 40
o
C
VDS
= 10V
Fig. 8. Transconductance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I
D
- Amperes
g
f s
- Siemens
TJ
= - 40
o
C
125
o
C
25
o
C
VDS
= 10V
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
2
4
6
8
10
12
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Volts
I
S
- Amperes
TJ
= 125
o
C
TJ = 25
o
C
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GS
- Volts
VDS
= 500V
I D = 2A
I G = 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
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