1N483B 1N485B 1N486B * AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 * GENERAL PURPOSE SILICON DIODES * METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65C to +175C Storage Temperature: -65C to +175C Operating Current: 200 mA Derating: 1.2 mA/C From 25C to 150C 1.0 mA/C From 150C to 175C Forward Current: 650 mA ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified TYPE VRM V RWM IO IO TA = 150C I FSM TP = 1/120 s V (pk) V (pk) mA mA TA = 25C A 1N483B 1N485B 1N486B 80 180 250 70 180 225 200 200 200 50 50 50 2 2 2 TYPE VF @100mA I R1 at V RWM TA = 25C V dc 1N483B 1N485B 1N486B 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 I R2 at V RM TA = 25C I R3 at V RWM TA = 150C nA dc A A dc 25 25 25 100 100 100 5 5 5 FIGURE 1 DESIGN DATA CASE: Hermetically sealed glass case. DO-7 outline LEAD MATERIAL: Copper clad steel LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 200 C/W maximum THERMAL IMPEDANCE: (ZOJX): 70 C/W maximum POLARITY: Cathode end is banded. MOUNTING POSITION: Any. 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com IN483B, IN485B and IN486B 1000 1 -65C 25 C 100 C 15 0C 10 0.1 .3 .4 .5 .6 .7 .8 .9 1.0 VF - Forward Voltage (V) 1.1 1.2 1.3 FIGURE 2 Typical Forward Current vs Forward Voltage 1000 100 IR - Reverese Current - (A) IF - Forward Current - (mA) 100 10 1 150C 0.1 C 100 25C .01 -65C NOTE : .001 20 40 60 80 100 120 140 Percent of Reverse Working Voltage (%) FIGURE 3 Typical Reverse Current vs Reverse Voltage All temperatures shown on graphs are junction temperatures