2N2324LEADFREE - Central Semiconductor Corp.

MAXIMUM RATINGS: (TC=25°C unless otherwise noted) 2N23__

SYMBOL 22 23 24 25 26 27 28 29 UNITS

Peak Repetitive Forward Voltage VDRM 25 50 100 150 200 250 300 400 V

Peak Repetitive Reverse Voltage VRRM 25 50 100 150 200 250 300 400 V

Non-Repetitive Peak Reverse Voltage VRSM 40 75 150 225 300 350 400 500 V

RMS On-State Current IT(RMS) 1.6 A

Average On-State Current (TC=85°C) IT(AV) 1.0 A

Peak One Cycle Surge (t=8.3ms) ITSM 15 A

Peak Gate Power PGM 0.10 W

Average Gate Power PG(AV) 0.01 W

Peak Gate Current IGM 0.10 A

Peak Gate Voltage VGM 6.0 V

Junction Temperature TJ-65 to +125 °C

Storage Temperature Tstg -65 to +150 °C

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN MAX UNITS

IDRM, IRRM Rated VDRM, VRRM, RGK=1.0kΩ 5.0 μA

IGT VD=6.0V, RL=100Ω 200 μA

IHVD=6.0V, RGK=1.0kΩ 2.0 mA

VGT VD=6.0V, RL=100Ω 0.8 V

VTM ITM=1.0A, tp=380μs 1.5 V

2N2322 2N2326

2N2323 2N2327

2N2324 2N2328

2N2325 2N2329

SILICON CONTROLLED RECTIFIER

1.6 AMPS, 25 THRU 400 VOLTS

TO-39 CASE

Central

Semiconductor Corp.

R0 (11-December 2008)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2322

Series types are hermetically sealed Silicon

Controlled Rectifiers designed for sensing

circuit applications and control systems.

MARKING: FULL PART NUMBER

Central

Semiconductor Corp.

TO-39 CASE - MECHANICAL OUTLINE

2N2322 2N2326

2N2323 2N2327

2N2324 2N2328

2N2325 2N2329

SILICON CONTROLLED RECTIFIER

1.6 AMPS, 25 THRU 400 VOLTS

R0 (11-December 2008)

LEAD CODE:

1) CATHODE

2) GATE

3) ANODE (case)

MARKING: FULL PART NUMBER