0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
13
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
1.00 (25.4)
MIN ANODE
(CASE)
Ø0.020 (0.51) 2X
0.155 (3.94)
MAX
PACKAGE DIMENSIONS
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
GaAs INFRARED EMITTING DIODE
DESCRIPTION
The LED55BF/LED55CF/LED56F series are 940nm LEDs in a wide angle, TO-46 package.
ANODE
(Connected
To Case)
3
1
CATHODE
SCHEMATIC
2001 Fairchild Semiconductor Corporation
DS300313 6/05/01 1 OF 4 www.fairchildsemi.com
LED55BF LED55CF LED56F
www.fairchildsemi.com 2 OF 4 6/05/01 DS300313
NOTE:
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, PO, is the total power radiated by the device into a solid angle of 2 !steradians.
Parameter Symbol Rating Unit
Operating Temperature TOPR -65 to +125 °C
Storage Temperature TSTG -65 to +150 °C
Soldering Temperature (Iron)(3,4,5 and 6) TSOL-I 240 for 5 sec °C
Soldering Temperature (Flow)(3,4 and 6) TSOL-F 260 for 10 sec °C
Continuous Forward Current IF100 mA
Forward Current (pw, 1µs; 200Hz) IF10 A
Reverse Voltage VR3V
Power Dissipation(TA= 25°C)(1) PD170 mW
Power Dissipation(TC= 25°C)(2) PD1.3 W
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Emission Wavelength IF= 100 mA "PE — 940 — nm
Emission Angle at 1/2 Power #— ±40 — Deg.
Forward Voltage IF= 100 mA VF— — 1.7 V
Reverse Leakage Current VR= 3 V IR— — 10 µA
Total Power LED55BF(7) IF= 100 mA PO3.5 — — mW
Total Power LED55CF(7) IF= 100 mA PO5.4 — — mW
Total Power LED56F(7) IF= 100 mA PO1.5 — — mW
Rise Time 0-90% of output tr— 1.0 — µs
Fall Time 100-10% of output tf— 1.0 — µs
ELECTRICAL / OPTICAL CHARACTERISTICS (TA=25°C) (All measurements made under pulse conditions)
GaAs INFRARED EMITTING DIODE
LED55BF LED55CF LED56F
Figure 1. Power Output vs. Input Current
0.01
.001 .002 .005 .01 .02 .05 0.1 0.2 0.5 1.0 2 5 10
IF, FORWARD CURRENT (A)
0.02
0.05
0.1
0.2
0.5
1.0
2
5
10
20
50
100
PO, NORMALIZED POWER OUTPUT
IF = 100 mA
TA = 25
°
C
NORMALIZED TO
CONTINUOUS
FORWARD
CURRENT
PW = 80 µsec
PULSED
FORWARD
CURRENT
Figure 2. Power Output vs. Temperature
0
0.2
-50
TA, AMBIENT TEMPERATURE (
°
C)
0.4
0.6
0.8
1.0
1.2
1.4
-25 0 150
PO, NORMALIZED POWER OUTPUT
755025 100 125
IF = 100 mA
TA = 25
°
C
NORMALIZED TO
Figure 5. Typical Radiation Pattern
0
20
θ - ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
40
60
80
100
-80 -60 -40
RELATIVE OUTPUT (%)
200-20 40 60 80
Figure 4. Forward Voltage vs. Forward Current
1
2
.9
VF, FORWARD VOLTAGE (V)
4
6
8
10
20
40
60
80
100
1.0 1.1 1.2
IF, FORWARD CURRENT (mA)
1.51.41.3
Figure 3. Forward Voltage vs. Forward Current
.01
.02
VF, FORWARD VOLTAGE (V)
.04
.06
.08
0.1
0.2
0.4
0.6
0.8
1.0
2.0
4.0
6.0
8.0
10
01 28
IF, FORWARD CURRENT (A)
54367109
TA = 100
°
C 25
°
C -55
°
C
DS300313 6/05/01 3 OF 4 www.fairchildsemi.com
GaAs INFRARED EMITTING DIODE
LED55BF LED55CF LED56F
TYPICAL PERFORMANCE CURVES
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
www.fairchildsemi.com 4 OF 4 6/05/01 DS300313
GaAs INFRARED EMITTING DIODE
LED55BF LED55CF LED56F
