Si2302DS
Vishay Siliconix
Document Number: 70628
S-53600—Rev. D, 22-May-97 www.vishay.com FaxBack 408-970-5600
2-1
N-Channel 1.25-W, 2.5-V MOSFET
VDS (V) rDS(on) () ID (A)
20
0.085 @ VGS = 4.5 V 2.8
20
0.115 @ VGS = 2.5 V 2.4
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2302DS (A2)*
*Marking Code
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20
V
Gate-Source V oltage VGS 8
V
Continuous Drain Current (TJ
=
150
C)
bTA= 25C
ID
2.8
A
Continuous
Drain
Current
(T
J =
150C)b
TA= 70C
I
D2.2
A
Pulsed Drain CurrentaIDM 10
A
Continuous Source Current (Diode Conduction)bIS1.6
Power Dissipation
bTA= 25C
PD
1.25
W
Power
Dissipationb
TA= 70C
P
D0.80
W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C
Parameter Symbol Limit Unit
Maximum Junction-to-Ambientb
RthJA
100
C/W
Maximum Junction-to-Ambientc
R
thJA 166
C/W
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide W eb: http://www.vishay .com/www/product/spice.htm
Si2302DS
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2 Document Number: 70628
S-53600—Rev. D, 22-May-97
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA 20
V
Gate-Threshold V oltage VGS(th) VDS = VGS, ID = 50 mA0.65 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V 1
mA
Zero
Gate
Voltage
Drain
Current
I
DSS VDS = 20 V, VGS = 0 V, TJ = 55C 10 m
A
On
-
State Drain Current
a
ID(on)
VDS w 5 V, VGS = 4.5 V 6
A
On
-
State
Drain
Currenta
I
D(on) VDS w 5 V, VGS = 2.5 V 4
A
Drain
-
Source On
-
Resistance
a
rDS(on)
VGS = 4.5 V, ID = 3.6 A 0.07 0.085
W
Drain
-
Source
On
-
Resistancea
r
DS(on) VGS = 2.5 V, ID = 3.1 A 0.085 0.115
W
Forward T ransconductance agfs VDS = 5 V, ID = 3.6 A 10 S
Diode Forward V oltage VSD IS = 1.6 A, VGS = 0 V 0.76 1.2 V
Dynamic
Total Gate Charge Qg
V 10VV 45VI 36A
5.4 10
C
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 3.6 A 0.65 nC
Gate-Drain Charge Qgd 1.60
Input Capacitance Ciss
V 10VV 0Vf 1MH
340
F
Output Capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz 115 pF
Reverse T ransfer Capacitance Crss 33
Switching
T urn-On Delay Time td(on)
V10VR55W
12 25
Rise T ime trVDD = 10 V, RL = 5.5 W
I36AV 45VR6W
36 60
ns
T urn-Off Delay T ime td(off)
DD ,L
ID ^ 3.6 A, VGEN = 4.5 V, RG = 6 W34 60
ns
Fall-Time tf10 25
Notes
a. Pulse test: PW v300 ms duty cycle v2%.. VNLR02
Si2302DS
Vishay Siliconix
Document Number: 70628
S-53600—Rev. D, 22-May-97 www.vishay.com FaxBack 408-970-5600
2-3
0
2
4
6
8
10
0 0.5 1.0 1.5 2.0 2.5
On-Resistance vs. Drain Current
Output Characteristics T ransfer Characteristics
VDS – Drain-to-Source Voltage (V)
– Drain Current (A)I D
VGS – Gate-to-Source Voltage (V)
– Drain Current (A)I D
0
2
4
6
8
10
012345
T
C
= 125C
–55C
0, 0.5, 1 V
VGS = 5 thru 2.5 V
1.5 V
2 V
0
200
400
600
800
1000
0 4 8 12 16 20
0.6
0.8
1.0
1.2
1.4
1.6
1.8
–50 0 50 100 150
0
1
2
3
4
5
01234567
0
0.03
0.06
0.09
0.12
0.15
0246810
Gate Charge
– Gate-to-Source Voltage (V)
Qg – Total Gate Charge (nC)
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF)
VGS
Crss
Coss
Ciss
VDS = 10 V
ID = 3.6 A
– On-Resistance (rDS(on) )
ID – Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 3.6 A
TJ – Junction Temperature (C)
(Normalized)
– On-Resistance (rDS(on) )
VGS = 2.5 V
VGS = 4.5 V
25C
Si2302DS
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4 Document Number: 70628
S-53600—Rev. D, 22-May-97
0.2 0.4 0.6 0.8 1.0 1.2
Power (W)
–0.4
–0.3
–0.2
–0.1
–0.0
0.1
0.2
–50 0 50 100 150
0
0.04
0.08
0.12
0.16
0.20
02468
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square W ave Pulse Duration (sec)
2
1
0.1
0.01
10–4 10–3 10–2 10–1 1
Normalized Effective T ransient
Thermal Impedance
30
– On-Resistance (rDS(on) W)
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
– Source Current (A)I S
TJ – Temperature (C)
Variance (V)VGS(th)
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
ID = 3.6 A
ID = 250 mA
10
1
10
TJ = 25C
TJ = 150C
0.01 0.10 1.00 10.00
T ime (sec)
TC = 25C
Single Pulse
14
12
8
4
0
2
6
10
