BFS17R - Vishay Telefunken

BFS17/BFS17R/BFS17W

Vishay Telefunken

www.vishay.de • FaxBack +1-408-970-5600

Rev. 4, 20-Jan-99 1 (10)

Document Number 85038

Silicon NPN Planar RF Transistor

Electrostatic sensitive device.

Observe precautions for handling.

Applications

For broadband amplifiers up to 1 GHz.

Features

High power gain

SMD-package

13 581

94 9280

BFS17 Marking: E1

Plastic case (SOT 23)

1 = Collector, 2 = Base, 3 = Emitter

13 581

9510527

BFS17R Marking: E4

Plastic case (SOT 23)

1 = Collector, 2 = Base, 3 = Emitter

313 652 13 570

BFS17W Marking: WE1

Plastic case (SOT 323)

1 = Collector, 2 = Base, 3 = Emitter

BFS17/BFS17R/BFS17W

Vishay Telefunken

www.vishay.de • FaxBack +1-408-970-5600 Rev. 4, 20-Jan-99

2 (10) Document Number 85038

Absolute Maximum Ratings

Tamb = 25

C, unless otherwise specified

Parameter Test Conditions Symbol Value Unit

Collector-base voltage VCBO 25 V

Collector-emitter voltage VCEO 15 V

Emitter-base voltage VEBO 2.5 V

Collector current IC25 mA

Total power dissipation Tamb ≤ 60

C Ptot 200 mW

Junction temperature Tj150

Storage temperature range Tstg –55 to +150

Maximum Thermal Resistance

Tamb = 25

C, unless otherwise specified

Parameter Test Conditions Symbol Value Unit

Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3

plated with 35

m Cu RthJA 450 K/W

BFS17/BFS17R/BFS17W

Vishay Telefunken

www.vishay.de • FaxBack +1-408-970-5600

Rev. 4, 20-Jan-99 3 (10)

Document Number 85038

Electrical DC Characteristics

Tamb = 25

C, unless otherwise specified

Parameter Test Conditions Symbol Min Typ Max Unit

Collector cut-off current VCE = 25 V, VBE = 0 ICES 100

Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA

Emitter-base cut-off current VEB = 2.5 V, IC = 0 IEBO 10

Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 V

Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA VCEsat 0.75 V

DC forward current transfer ratio VCE = 1 V, IC = 2 mA hFE 20 100 150

VCE = 1 V, IC = 25 mA hFE 20

Electrical AC Characteristics

Tamb = 25

C, unless otherwise specified

Parameter Test Conditions Symbol Min Typ Max Unit

Transition frequency VCE = 5 V, IC = 2 mA, f = 300 MHz fT1.5 GHz

VCE = 5 V, IC = 14 mA, f = 300 MHz fT2.4 GHz

VCE = 5 V, IC = 25 mA, f = 300 MHz fT2.1 GHz

Collector-base capacitance VCB = 5 V, f = 1 MHz Ccb 0.45 pF

Collector-emitter capacitance VCE = 5 V, f = 1 MHz Cce 0.2 pF

Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.8 pF

Noise figure VCE = 5 V, IC = 2 mA, ZS = 50

f = 800 MHz F 3.5 dB

Power gain VCE = 5 V, IC = 14 mA, ZS = 50

f = 200 MHz Gpe 23 dB

VCE = 5 V, IC = 14 mA, ZS = 50

f = 800 MHz Gpe 11 dB

Linear output voltage – two

tone intermodulation test VCE = 5 V, IC = 14 mA, dIM = 60 dB,

f1 = 806 MHz, f2 = 810 MHz,

ZS = ZL = 50

V1 = V2100 mV

Third order intercept point VCE = 5 V, IC = 14 mA, f = 800 MHz IP323 dBm

BFS17/BFS17R/BFS17W

Vishay Telefunken

www.vishay.de • FaxBack +1-408-970-5600 Rev. 4, 20-Jan-99

4 (10) Document Number 85038

Common Emitter S–Parameters

Z0 = 50

Tamb = 25

C, unless otherwise specified

S11 S21 S12 S22

VCE/V IC/mA f/MHz LIN

MAG ANG LIN

MAG ANG

deg deg deg deg

100 0.89 –30.1 5.92 155.7 0.03 73.7 0.95 –9.2

300 0.67 –77.7 4.35 121.5 0.06 53.5 0.80 –18.5

500 0.52 –110.1 3.12 100.8 0.08 47.4 0.71 –20.3

800 0.42 –141.1 2.13 82.4 0.09 48.7 0.67 –21.6

2 1000 0.40 –155.6 1.77 73.5 0.10 51.3 0.67 –23.9

1200 0.40 –167.6 1.51 66.1 0.11 54.3 0.67 –27.1

1500 0.41 176.3 1.27 56.0 0.13 59.6 0.66 –32.4

1800 0.43 162.8 1.09 48.6 0.15 65.5 0.66 –37.3

2000 0.44 153.6 0.98 45.8 0.18 71.6 0.68 –41.0

100 0.75 –49.0 11.55 142.9 0.02 66.8 0.88 –14.3

300 0.48 –106.9 6.36 106.6 0.05 55.0 0.67 –18.9

500 0.39 –137.3 4.09 90.5 0.06 56.9 0.61 –17.4

800 0.36 –162.5 2.65 76.0 0.08 61.2 0.60 –17.6

5 5 1000 0.35 –173.1 2.16 68.6 0.10 63.2 0.61 –20.1

1200 0.37 178.1 1.84 62.2 0.11 65.2 0.61 –23.4

1500 0.40 165.0 1.51 53.2 0.14 68.1 0.61 –28.9

1800 0.42 153.7 1.28 46.4 0.16 71.8 0.61 –33.7

2000 0.43 146.0 1.16 44.2 0.19 76.1 0.64 –37.5

100 0.58 –70.1 16.31 130.8 0.02 62.7 0.79 –17.5

300 0.39 –129.4 7.28 98.3 0.04 61.2 0.59 –16.5

500 0.36 –154.4 4.52 85.2 0.05 64.9 0.56 –14.2

800 0.36 –174.1 2.88 72.6 0.08 67.6 0.57 –14.8

10 1000 0.36 176.8 2.33 65.9 0.10 68.7 0.58 –17.5

1200 0.38 169.3 1.97 59.8 0.11 70.2 0.59 –21.3

1500 0.41 159.0 1.61 51.7 0.14 72.7 0.59 –26.7

1800 0.44 148.4 1.36 45.4 0.17 75.6 0.60 –31.8

2000 0.46 140.9 1.23 43.0 0.20 79.6 0.62 –35.7

BFS17/BFS17R/BFS17W

Vishay Telefunken

www.vishay.de • FaxBack +1-408-970-5600

Rev. 4, 20-Jan-99 5 (10)

Document Number 85038

S11 S21 S12 S22

VCE/V IC/mA f/MHz LIN

MAG ANG LIN

MAG ANG

deg deg deg deg

100 0.49 –84.8 18.25 124.3 0.01 62.8 0.73 –18.0

300 0.37 –140.9 7.49 94.8 0.03 65.1 0.57 –14.7

500 0.36 –162.3 4.59 82.8 0.05 68.3 0.55 –12.7

800 0.37 –179.6 2.91 71.0 0.08 70.4 0.56 –13.5

15 1000 0.38 173.1 2.34 64.5 0.09 71.4 0.58 –16.5

1200 0.40 166.1 1.98 58.8 0.11 72.8 0.58 –20.4

1500 0.44 155.8 1.61 50.7 0.14 75.2 0.59 –26.2

1800 0.46 145.8 1.36 44.6 0.17 78.2 0.60 –31.4

2000 0.48 137.7 1.23 42.4 0.20 81.9 0.62 –35.2

100 0.44 –96.6 19.07 120.0 0.01 62.0 0.70 –17.6

300 0.36 –148.7 7.46 92.6 0.03 67.9 0.57 –13.3

500 0.38 –167.0 4.55 81.4 0.05 70.5 0.55 –11.6

800 0.39 177.5 2.87 69.9 0.07 72.3 0.57 –13.2

20 1000 0.40 169.8 2.31 63.5 0.09 73.3 0.58 –16.3

1200 0.42 163.8 1.95 57.9 0.11 74.9 0.59 –20.3

1500 0.46 153.8 1.58 50.1 0.13 77.5 0.59 –26.2

1800 0.49 143.7 1.34 43.9 0.17 80.4 0.60 –31.4

2000 0.49 136.1 1.21 41.9 0.20 83.7 0.62 –35.4

BFS17/BFS17R/BFS17W

Vishay Telefunken

www.vishay.de • FaxBack +1-408-970-5600 Rev. 4, 20-Jan-99

6 (10) Document Number 85038

Typical Characteristics (Tamb = 25

C unless otherwise specified)

100

150

200

250

300

0 20 40 60 80 100 120 140 160

Tamb – Ambient Temperature ( °C )96 12159

P – Total Power Dissipation ( mW )

tot

Figure 1. Total Power Dissipation vs.

Ambient Temperature

500

1000

1500

2000

2500

3000

0 5 10 15 20 25 30

IC – Collector Current ( mA )13603

f – Transition Frequency ( MHz )

VCE=5V

f=300MHz

Figure 2. Transition Frequency vs. Collector Current

0.2

0.4

0.6

0.8

1.0

0 4 8 12 16 20

VCB – Collector Base Voltage ( V )13604

C – Collector Base Capacitance ( pF )

f=1MHz

Figure 3. Collector Base Capacitance vs.

Collector Base Voltage

BFS17/BFS17R/BFS17W

Vishay Telefunken

www.vishay.de • FaxBack +1-408-970-5600

Rev. 4, 20-Jan-99 7 (10)

Document Number 85038

VCE = 5 V, IC = 10 mA , Z0 = 50

S11

13 546

–j0.2

–j0.5

–j

–j2

–j5

j0.2

j0.5

ÁÁÁ

0.2

ÁÁ

2.0 GHz

0.5

1.0

0.1

0.3

Figure 4. Input reflection coefficient

S21

13548

0°

90°

180°

–90°

8 16

–150°

–120°–60°

–30°

120°

150°

60°

30°

2.0 GHz

0.5

0.1

0.3

Figure 5. Forward transmission coefficient

S12

13 547

0°

90°

180°

–90°

0.08 0.16

–150°

–120°–60°

–30°

120°

150°

60°

30°

2.0 GHz

0.5

1.0

0.1

1.5

Figure 6. Reverse transmission coefficient

S22

13 549

–j0.2

–j0.5

–j

–j2

–j5

j0.2

j0.5

ÁÁÁ

0.2

ÁÁÁ

0.5

ÁÁ

2.0 GHz

0.5 0.1

Figure 7. Output reflection coefficient

BFS17/BFS17R/BFS17W

Vishay Telefunken

www.vishay.de • FaxBack +1-408-970-5600 Rev. 4, 20-Jan-99

8 (10) Document Number 85038

Dimensions of BFS17 in mm

95 11346

Dimensions of BFS17R in mm

95 11347

BFS17/BFS17R/BFS17W

Vishay Telefunken

www.vishay.de • FaxBack +1-408-970-5600

Rev. 4, 20-Jan-99 9 (10)

Document Number 85038

Dimensions of BFS17W in mm

96 12236

BFS17/BFS17R/BFS17W

Vishay Telefunken

www.vishay.de • FaxBack +1-408-970-5600 Rev. 4, 20-Jan-99

10 (10) Document Number 85038

Ozone Depleting Substances Policy Statement

It is the policy of V ishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423