MMBT3906T — PNP Epit axial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3906T Rev. 1.0.0 1
February 2008
MMBT3906T
PNP Epitaxial Silicon Transistor
Features
• General purpose amplifier transistor.
• Ultra-Small Surface Mount Package for all types.
• Suitable for general switching & amplification
• Well suited for portable application
•As complementary type, NPN MMBT3904T is recommended
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* Ta=25°C unless otherwise noted
* Minimum land pad.
Electrical Characteristics* Ta=25°C unless otherwise note d
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current 200 mA
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -55 ~ 150 °C
Symbol Parameter Max Unit
PCCollector Power Dissipation, by RθJA 250 mW
RθJA Thermal Resistance, Junction to Ambient 500 °C/W
Symbol Parameter Test Condition Min. Max. Unit
BVCBO Collector-Base Breakdown Voltage IC = -10μA, IE = 0 -40 V
BVCEO Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 40 V
BVEBO Emitter-Base Breakdown Voltage IE = -10μA, IC = 0 -5 V
ICEX Collector Cut-off Current VCE = -30V, VEB(OFF) =-0.3V -50 nA
hFE DC Current Gain VCE = 1V, IC =- 0.1mA
VCE = 1V, IC = -1mA
VCE = 1V, IC = -10mA
VCE = 1V, IC = -50mA
VCE = 1V, IC = -100mA
60
80
100
60
30
300
VCE (sat) Collector-Emitter Saturation Voltage IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA -0.25
-0.4 V
V
VBE (sat) Base-Emitter Saturation Voltage IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA -0.65 -0.85
-0.95 V
V
fTCurrent Gain Bandwidth Product VCE = -20V, IC = -10mA, f = 100MHz 250 MHz
Cob Output Capacitance VCB = -5V, IE = 0, f = 1MHz 7.0 pF
Cib Input Capacitance VEB = -0.5V, IC = 0, f = 1MHz 15 pF
tdDelay Time VCC = -3V, IC = -10mA
IB1 =- IB2 = -1mA 35 ns
trRise Time 35 ns
tsStorage Time 225 ns
tfFall Time 75 ns
SOT-523F
Marking : A06
B
C
E