HFA180NH40PBF - Vishay Presicion Group

Document Number: 94061 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 01-Aug-08 1

HEXFRED®

Ultrafast Soft Recovery Diode, 180 A

HFA180NH40PbF

Vishay High Power Products

FEATURES

• Very low Qrr and trr

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced snubbing

DESCRIPTION

HEXFRED® diodes are optimized to reduce losses and

EMI/RFI in high frequency power conditioning systems. An

extensive characterization of the recovery behavior for

different values of current, temperature and dI/dt simplifies

the calculations of losses in the operating conditions. The

softness of the recovery eliminates the need for a snubber in

most applications. These devices are ideally suited for

power converters, motors drives and other applications

where switching losses are significant portion of the total

losses.

PRODUCT SUMMARY

IF(AV) 180 A

VR400 V

IF(DC) at TC200 A at 100 °C

HALF-PAK (D-67)

Lug terminal

anode

Base

cathode

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage VR400 V

Continuous forward current IF

TC = 25 °C 395

ATC = 100 °C 200

Single pulse forward current IFSM Limited by junction temperature 1200

Non-repetitive avalanche energy EAS L = 100 µH, duty cycle limited by maximum TJ1.4 mJ

Maximum power dissipation PD

TC = 25 °C 657 W

TC = 100 °C 263

Operating junction and storage

temperature range TJ, TStg - 55 to + 150 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode

breakdown voltage VBR IR = 100 µA 400 - -

Maximum forward voltage VFM

IF = 180 A

See fig. 1

- 1.08 1.46

IF = 360 A - 1.22 1.8

IF = 180 A, TJ = 125 °C - 0.99 1.34

Maximum reverse

leakage current IRM TJ = 125 °C, VR = 400 V See fig. 2 - - 4 mA

Junction capacitance CTVR = 200 V See fig. 3 - 370 500 pF

Series inductance LSFrom top of terminal hole to mounting plane - 6.0 - nH

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94061

2Revision: 01-Aug-08

HFA180NH40PbF

Vishay High Power Products HEXFRED®

Ultrafast Soft Recovery

Diode, 180 A

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time

See fig. 5 trr

TJ = 25 °C

IF = 135 A

dIF/dt = 200 A/µs

VR = 200 V

- 90 140 ns

TJ = 125 °C - 280 440

Peak recovery current

See fig. 6 IRRM

TJ = 25 °C - 9 16 A

TJ = 125 °C - 18 32

Reverse recovery charge

See fig. 7 Qrr

TJ = 25 °C - 300 950 nC

TJ = 125 °C - 2650 6300

Peak rate of recovery current

See fig. 8 dI(rec)M/dt TJ = 25 °C - 300 - A/µs

TJ = 125 °C - 290 -

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage

temperature range TJ, TStg - 55 to 150 °C

Maximum thermal resistance,

junction to case RthJC DC operation

See fig. 4 0.19

°C/W

Typical thermal resistance,

case to heatsink RthCS Mounting surface, smooth and greased 0.05

Approximate weight 30 g

1.06 oz.

Mounting torque minimum 3 (26.5)

N · m

(lbf · in)

maximum 4 (35.4)

Terminal torque minimum 3.4 (30)

maximum 5 (44.2)

Case style HALF-PAK module

Document Number: 94061 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 01-Aug-08 3

HFA180NH40PbF

HEXFRED®

Ultrafast Soft Recovery

Diode, 180 A

Vishay High Power Products

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 4 - Maximum Allowable Case Temperature vs. DC

Forward Current

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt

Fig. 6 - - Typical Recovery Current vs. dIF/dt

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

03.01.0 1.5

VFM - Forward Voltage Drop (V)

IF - Instantaneous Forward Current (A)

100

0.5 2.0 2.5

1000

0.01

0.1

100

VR - Reverse Voltage (V)

IR - Reverse Current (µA)

200 400300

0.001

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

0.0001

1000

10 000

1 10 100 1000

100

VR - Reverse Voltage (V)

CT - Junction Capacitance (pF)

TJ = 25 °C

160

0 100 300 500

IF(AV) - DC Forward Current (A)

Maximum Allowable

Case Temperature (°C)

140

120

100

200 400

250

100 1000

dIF/dt (A/µs)

trr (ns)

TJ = 125 °C

TJ = 25 °C

350

150

100

IF = 200 A

IF = 180 A

IF = 70 A

200

300

400

100 1000

/dt (A/µs)

RRM

(A)

IF = 200 A

IF = 180 A

IF = 70 A

TJ = 125 °C

TJ = 25 °C

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94061

4Revision: 01-Aug-08

HFA180NH40PbF

Vishay High Power Products HEXFRED®

Ultrafast Soft Recovery

Diode, 180 A

Fig. 7 - - Typical Stored Charge vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt

Fig. 9 - Maximum Thermal Impedance ZthJC Characteristics

6000

4000

100 1000

/dt (A/µs)

(nC)

TJ = 125 °C

TJ = 25 °C

2000

1000

3000

5000

IF = 200 A

IF = 180 A

IF = 70 A

1000

100

100 1000

dIF/dt (A/µs)

dI(rec)M/dt (A/µs)

TJ = 125 °C

TJ = 25 °C

200 A

180 A

70 A

10 000

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

- Rectangular Pulse Duration (s)

thJC

- Thermal Response

Single pulse

(thermal response)

0.001

D = 0.50

D = 0.33

D = 0.25

D = 0.17

D = 0.08

Document Number: 94061 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 01-Aug-08 5

HFA180NH40PbF

HEXFRED®

Ultrafast Soft Recovery

Diode, 180 A

Vishay High Power Products

Fig. 10 - Reverse Recovery Parameter Test Circuit

Fig. 11 - Reverse Recovery Waveform and Definitions

Fig. 12 - Avalanche Test Circuit and Waveforms

IRFP250

D.U.T.

L = 70 µH

= 200 V

0.01 Ω

/dt

adjust

0.5 I

RRM

(rec)M

/dt

0.75 I

RRM

/dt

(1)

(2)

(3)

(4)

(5)

(1) dIF/dt - rate of change of current

through zero crossing

(2) IRRM - peak reverse recovery current

(3) trr - reverse recovery time measured

from zero crossing point of negative

going IF to point where a line passing

through 0.75 IRRM and 0.50 IRRM

extrapolated to zero current.

(4) Qrr - area under curve defined by trr

and IRRM

trr x IRRM

Qrr =

(5) dI(rec)M/dt - peak rate of change of

current during tb portion of trr

V(AVAL)

VR(RATED)

IL(PK)

Decay

time

Current

monitor

High-speed

switch

D.U.T.

Rg = 25 Ω

Freewheel

diode

Vd = 50 V

L = 100 µH

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94061

6Revision: 01-Aug-08

HFA180NH40PbF

Vishay High Power Products HEXFRED®

Ultrafast Soft Recovery

Diode, 180 A

ORDERING INFORMATION TABLE

1- HEXFRED

family, electron irradiated

2- Average current rating

3- N = Not isolated

4- H = HALF-PAK

5- Voltage rating (400 V)

6- Lead (Pb)-free

Device code

51324

HFA 180 N H 40 PbF

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95020

Document Number: 95020 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 20-May-09 1

D-67 HALF-PAK

Outline Dimensions

Vishay Semiconductors

DIMENSIONS in millimeters (inches)

30 ± 0.05

(1.2 ± 0.002)

5 (0.20)

4 (0.16)

13 (0.51)

24.4 (0.96)

5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039)

17.5 (0.69)

16.5 (0.65)

Ø 4.3 - 0.1

0.0

(Ø 0.169 )

- 0.004

0.000

¼" - 20 UNC

40 MAX. (1.58)

21 (0.82)

20 (0.78)

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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