DATA SH EET
Product specification
Supersedes data of 2001 Oct 29 2001 Nov 02
DISCRETE SEMICONDUCTORS
BGD714
750 MHz, 20.3 dB gain power
doubler amplifier
b
ook, halfpage
M3D252
2001 Nov 02 2
Philips Semiconductors Product specification
750 MHz, 20.3 dB gain power doubler amplifier BGD714
FEATURES
•Excellent linearity
•Extremely low noise
•Excellent return loss properties
•Silicon nitride passivation
•Rugged construction
•Gold metallization ensures excellent reliability.
APPLICATIONS
•CATV systems operating in the 40 to 750 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5+V
B
7, 8 common
9 output
handbook, halfpage
789
2351
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Gppower gain f = 45 MHz 20 20.6 dB
f = 750 MHz 20.8 21.8 dB
Itot total current consumption (DC) VB= 24 V 380 410 mA
SYMBOL PARAMETER MIN. MAX. UNIT
VBsupply voltage −30 V
ViRF input voltage −70 dBmV
Tstg storage temperature −40 +100 °C
Tmb operating mounting base temperature −20 +100 °C
2001 Nov 02 3
Philips Semiconductors Product specification
750 MHz, 20.3 dB gain power doubler amplifier BGD714
CHARACTERISTICS
Bandwidth 40 to 750 MHz; VB= 24 V; Tmb =35°C; ZS=Z
L=75Ω
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Gppower gain f = 45 MHz 20 20.3 20.6 dB
f = 750 MHz 20.8 21.3 21.8 dB
SL slope straight line f = 45 to 100 MHz; note 1 0.5 1 1.5 dB
FL flatness straight line f = 45 to 100 MHz −−±0.35 dB
f = 100 to 700 MHz −−±0.5 dB
f = 700 to 750 MHz −−±0.15 dB
S11 input return losses f = 45 to 80 MHz 23 −−dB
f = 80 to 160 MHz 23 −−dB
f = 160 to 320 MHz 21 −−dB
f = 320 to 550 MHz 20 −−dB
f = 550 to 650 MHz 20 −−dB
f = 650 to 750 MHz 19 −−dB
f = 750 to 790 MHz 17 −−dB
S22 output return losses f = 45 to 80 MHz 23 −−dB
f = 80 to 160 MHz 23 −−dB
f = 160 to 320 MHz 20 −−dB
f = 320 to 550 MHz 20 −−dB
f = 550 to 650 MHz 20 −−dB
f = 650 to 750 MHz 19 −−dB
f = 750 to 790 MHz 17 −−dB
S21 phase response f = 50 MHz −45 −+45 deg
CTB composite triple beat 112 channels flat; Vo= 44 dBmV;
fm= 745.25 MHz −−−61 dB
79 channels; Vo= 44 dBmV; fm= 547.25 MHz −−−67 dB
79 channels; fm= 445.25 MHz;
Vo= 49.3 dBmVat 547 MHz; note 2 −−−62 dB
Xmod cross modulation 112 channels flat; Vo= 44 dBmV;
fm= 55.25 MHz −−−62 dB
79 channels flat; Vo= 44 dBmV;
fm= 55.25 MHz −−−66 dB
79 channels; fm= 745.25 MHz;
Vo= 49.3 dBmVat 547 MHz; note 2 −−−58 dB
2001 Nov 02 4
Philips Semiconductors Product specification
750 MHz, 20.3 dB gain power doubler amplifier BGD714
Notes
1. Slope straight line is defined as gain at 750 MHz −gain at 45 MHz.
2. Tilt = 7.3 dB (55 to 547 MHz).
3. fp= 55.25 MHz; Vp= 44 dBmV;
fq= 691.25 MHz; Vq= 44 dBmV;
measured at fp+f
q= 746.5 MHz.
4. Measured according to DIN45004B:
fp= 740.25 MHz; Vp=V
o
;
f
q= 747.25 MHz; Vq=V
o−6 dB;
fr= 749.25 MHz; Vr=V
o−6 dB;
measured at fp+f
q−f
r= 738.25 MHz.
5. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
CSO composite second
order distortion 112 channels flat; Vo= 44 dBmV;
fm= 746.5 MHz −−−62 dB
79 channels flat; Vo= 44 dBmV;
fm= 548.5 MHz −−−67 dB
79 channels; fm= 746.5 MHz;
Vo= 49.3 dBmVat 547 MHz; note 2 −−−60 dB
d2second order distortion note 3 −−−74 dB
Vooutput voltage dim =−60 dB; note 4 64 −−dBmV
NF noise figure f = 50 MHz −−5.5 dB
f = 550 MHz −−5.5 dB
f = 750 MHz −−7dB
I
tot total current
consumption (DC) note 5 380 395 410 mA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2001 Nov 02 5
Philips Semiconductors Product specification
750 MHz, 20.3 dB gain power doubler amplifier BGD714
handbook, halfpage
2000 400 800600
MCD845
f (MHz)
CTB
(dB)
−50
−60
−80
−90
−70
56
52
44
40
48
(1)
(2)
(3)
(4)
Vo
(dBmV)
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
(1) Vo.
(2) Typ. +3 σ.
ZS=Z
L=75Ω; VB= 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
2000 400 800600
MCD846
f (MHz)
Xmod
(dB)
−50
−60
−80
−90
−70
56
52
44
40
48
(1)
(2)
(3)
(4)
Vo
(dBmV)
Fig.3 Crossmodulationasafunctionoffrequency
under tilted conditions.
(1) Vo.
(2) Typ. +3 σ.
ZS=Z
L=75Ω; VB= 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ. −3σ.
handbook, halfpage
2000 400 800600
MCD847
f (MHz)
CSO
(dB)
−50
−60
−80
−90
−70
56
52
44
40
48
(1)
(2)
(3)
(4)
Vo
(dBmV)
Fig.4 Composite second order distortion as a
function of frequency under tilted
conditions.
(1) Vo.
(2) Typ. +3 σ.
ZS=Z
L=75Ω; VB= 24 V; 79 channels;
tilt = 7.3 dB (50 to 550 MHz).
(3) Typ.
(4) Typ. −3σ.
2001 Nov 02 6
Philips Semiconductors Product specification
750 MHz, 20.3 dB gain power doubler amplifier BGD714
PACKAGE OUTLINE
UNIT A2
max. cee
1q
Q
max. q1q2U1
max. U2W
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 20.8 9.1 0.51
0.38 0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8 4.15
3.85 2.4 38.1 25.4 10.2 4.2 44.75 8 0.25 0.1 3.8
bF
p
6-32
UNC
yw
S
DIMENSIONS (mm are the original dimensions)
SOT115J
0 5 10 mm
scale
A
max. D
max. L
min.
E
max. Z
max.
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
D
U1q
q2
q1
b
F
S
A
Z p
E
A2
L
c
d
Q
U2
M
w
78923
We
e
1
5
p
1
d
max.
yMB
yMB
B
99-02-06
yMB
2001 Nov 02 7
Philips Semiconductors Product specification
750 MHz, 20.3 dB gain power doubler amplifier BGD714
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseorat any otherconditionsabovethosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof anyoftheseproducts, conveysnolicenceor title
under any patent, copyright, or mask work right to these
products,andmakesnorepresentations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2001 SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613518/04/pp8 Date of release: 2001 Nov 02 Document order number: 9397 750 09029
