DPG30P300PJ
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Phase leg
HiPerFRED²
1 2 3
Part number
DPG30P300PJ
Backside: isolated
FAV
rr
tns35
RRM
30
300
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
ISOPLUS220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG30P300PJ
n
s
3
A
T
VJ
=°C
reverse recovery time
A
8.5
35
65
n
s
I
RM
max. reverse recovery current
I
F
=A;30
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V200
T
VJ
=°C25
T=125°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.27
R1.05 K/
W
R
min.
30
V
RSM
V
1T = 25°C
VJ
T = °C
VJ
m
A
0.2V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
135
P
tot
145
W
T = 25°C
C
RK/
W
30
300
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.57
T = 25°C
VJ
150
V
F0
V
0.60T = °C
VJ
175
r
F
10.3 m
Ω
V
0.98T = °C
VJ
I = A
F
V
30
1.30
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
µ
A
150
V
RRM
V
300
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
60
j
unction capacitance V = V200 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
450
A
300
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
300
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG30P300PJ
Ratings
Product
M
arkin
g
Date Code
Part No.
Logo
UL listed
IXYS
abcd
Assembly Code
Ayyww
Assembly Line
XXXXXXXXX
®
ISOPLUS®
D
P
G
30
P
300
PJ
Part number
Diode
HiPerFRED
extreme fast
Phase leg
ISOPLUS220AB (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g2
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mount ing for ce w i th cli p 20
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
1.0
3.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 35 A
per terminal
150-55
terminal to terminal
ISOPLUS220
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DPG30P300PJ 508134Tube 50DPG30P300PJStandard
3600
ISOL
T
stg
°C150
storage temperature -55
3000
threshold voltage V0.6
mΩ
V
0 max
R
0 max
slope resistance * 7.1
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Fast
Diode
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG30P300PJ
T
12 3
EAE1
D1
D
L1
L
b4
2x b2
2x e
3x b
A1
c
D3
A2
D2
W
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic
surface level of device bottom side
Die Gehäuseabmessungen entsprechen dem Typ TO-273
gemäß JEDEC außer D und D1.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-273 except D and D1.
min max min max
A 4.00 5.00 0.157 0.197
A1 2.50 3.00 0.098 0.118
A2 1.60 1.80 0.063 0.071
b 0.90 1.30 0.035 0.051
b2 2.35 2.55 0.093 0.100
b4 1.25 1.65 0.049 0.065
c 0.70 1.00 0.028 0.039
D 15.00 16.00 0.591 0.630
D1 12.00 13.00 0.472 0.512
D2 1.10 1.50 0.043 0.059
D3 14.90 15.50 0.587 0.610
E 10.00 11.00 0.394 0.433
E1 7.50 8.50 0.295 0.335
e 2.54 BSC 0.100 BSC
L 13.00 14.50 0.512 0.571
L1 3.00 3.50 0.118 0.138
T° 42.5 47.5
W - 0.1 - 0.004
Dim.
Millimeters Inches
1 2 3
Outlines ISOPLUS220
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG30P300PJ
0.0 0.4 0.8 1.2 1.6 2.0
10
20
30
40
50
60
70
80
0 200 400 600
40
50
60
70
80
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 40 80 120 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
K
f
T
VJ
id-]C°[
F
/dt [A/μs]
t[ms]
0200400600
100
200
300
400
500
600
700
1
2
3
4
5
6
7
0 200 400 600
4
6
8
10
12
14
16
18
0 200 400 600
0.1
0.2
0.3
0.4
0.5
0.6
Q
rr
[μC]
V
F
[V] -di
F
/dt [A/μs]
Z
thJC
[K/W]
I
F
=60A
30 A
15 A
I
RM
Q
rr
V
FR
t
fr
Fig. 1 Forward current
IFversus VF
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF/dt
Fig. 3 Typ. reverse recov. current
IRM versus -diF/dt
Fig. 4 Typ. dynamic parameters
Qrr,I
RM versus TVJ
Fig. 5 Typ. reverse recov. time
trr versus -diF/dt
Fig. 6 Typ. forward recovery voltage
VFR &timet
fr versus diF/dt
Fig. 8 Transient thermal impedance junction to case
IF
[A]
-diF/dt [A/μs]
IRM
[A]
trr
[ns]
-diF/dt [A/μs]
tfr
[ns]
VFR
[V]
0 200 400 600
0
2
4
6
8
10
12
E
rec
[μJ]
-di
F
/dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -di
F
/dt
I
F
=60A
30 A
15 A
I
F
= 60 A
30 A
15 A
I
F
= 60 A
30 A
15 A
T
VJ
= 125°C
V
R
=200 V
T
VJ
= 125°C
V
R
= 200 V
T
VJ
=125°C
V
R
= 200 V
I
F
=30 A
T
VJ
=125°C
V
R
=200V
T
VJ
= 150°C
25°C T
VJ
=125°C
V
R
= 200 V
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
