© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1200 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 1.0 A
IDM TC= 25°C, pulse width limited by TJM 1.8 A
IATC= 25°C1A
EAS TC= 25°C 100 mJ
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C63W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062) from case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.50 g
TO-220 3.00 g
DS99870A (04/08)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 1200 V
VGS(th) VDS = VGS, ID = 50μA 2.5 4.5 V
IGSS VGS = ±20V, VDS = 0V ±50 nA
IDSS VDS = VDSS 5 μA
VGS = 0V TJ = 125°C 200 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 15.5 20 Ω
PolarTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA1N120P
IXTP1N120P
VDSS = 1200V
ID25 = 1A
RDS(on) ≤≤
≤≤
≤ 20ΩΩ
ΩΩ
Ω
G = Gate D = Drain
S = Source TAB = Drain
Features
zInternational standard packages
zUnclamped Inductive Switching
(UIS) rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
TO-263 (IXTA)
TO-220 (IXTP)
D(TAB)
G
S
GS
(TAB)
Applications:
zHigh Voltage Switched-mode and
resonant-mode power supplies
zHigh Voltage Pulse Power Applications
zHigh Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
zHigh Voltage DC-DC converters
zHigh Voltage DC-AC inverters
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA1N120P
IXTP1N120P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS= 30V, ID = 0.5 • ID25, Note 1 0.55 0.92 S
Ciss 445 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 25 pF
Crss 5.4 pF
td(on) Resistive Switching Times 20 ns
trVGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 28 ns
td(off) RG = 30Ω (External) 54 ns
tf 27 ns
Qg(on) 17.6 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 3.5 nC
Qgd 10.6 nC
RthJC 2.0 °C/W
RthCS (TO-220) 0.50 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0V 1.0 A
ISM Repetitive, pulse width limited by TJM 3.0 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr IF = 1.0A, -di/dt = 100A/μs, 900 ns
VR = 100V, VGS = 0V
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Pins: 1 - Gate 2 - Drain
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
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© 2008 IXYS CORPORATION, All rights reserved
IXTA1N120P
IXTP1N120P
Fi g . 1. Ou tput C h ar acter i sti cs
@ 25ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 3 6 9 12 15 18 21 24 27 30
V
DS
- Vo lts
I
D
- A m p ere s
V
GS
= 10V
7V
6V
5V
Fi g . 2. Ou tp u t C h ar acter i sti cs
@ 125ºC
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
I
D
- A m p ere s
V
GS
= 10V
6V
5V
Fig. 3. R
DS(on)
Normalized to I
D
= 0.5A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrad e
R
DS(on)
- N orma liz ed
V
GS
= 10V
I
D
= 1A
I
D
= 0. 5A
Fig. 4. R
DS(on)
Normalized to I
D
= 0.5A Valu e
vs. D r ai n C u r r en t
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I
D
- Amperes
R
DS(on)
- N orma liz ed
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 6. I nput Admittan ce
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
GS
- Vo lts
I
D
- Am peres
T
J
= 12 5ºC
25ºC
- 40ºC
Fi g . 5. Maxi mu m Dr ai n C u r r en t vs.
Case Temper atu r e
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Cen tigrad e
I
D
- A mp e res
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA1N120P
IXTP1N120P
IXYS REF: T_1N120P(2A-245) 04-01-08-A
Fig. 7. Transconductance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I
D
- Amperes
g
f s
- Siem ens
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volt s
I
S
- Am peres
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
024681012141618
Q
G
- NanoCoulom bs
V
GS
- V o lts
V
DS
= 600V
I
D
= 500mA
I
G
= 10mA
Fig. 10. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
DS
- Volt s
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 11 . Maximu m Tr a n si ent The r mal I mp e d an ce
0.0
0.1
1.0
10.0
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
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