TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/527
Devices Qualified Level
2N6648 2N6649 2N6650
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol
2N6648
2N6649
2N6650
Unit
Collector-Emitter Voltage VCEO -40 -60 -80 Vdc
Collector-Base Voltage VCBO -40 -60 -80 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Base Current IB -0.25 Adc
Collector Current IC -10 Adc
Total Power Dissipation @ TA = +250C (1)
@ TC = +250C (2) PT 5.0
85 W
W
Operating & Storage Junction Temperature Range
TJ, Tstg -65 to +175 0C
THERMAL CHARACTERISTICS
Characteristics Symbol
Max. Unit
Thermal Resistance Junction-to-Case RθJC 1.76 0C/W
1) Derate linearly 33.3 mW/0C for TA > +250C
2) Derate linearly 567 mW/0C for TC > +250C
TO-3* (TO-204AA)
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc 2N6648
2N6649
2N6650
V(BR)CEO
-40
-60
-80
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, RBB = 100 2N6648
2N6649
2N6650
V(BR)CER
-40
-60
-80
Vdc
Collector-Base Cutoff Current
VCB = -40 Vdc 2N6648
VCB = -60 Vdc 2N6649
VCB = -80 Vdc 2N6650
ICBO
-1.0
-1.0
-1.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6648, 2N6649, 2N6650 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
Emitter-Base Cutoff Current
VEB = 5.0 Vdc IEBO
-10 mAdc
Collector-Emitter Cutoff Current
VCE = -40 Vdc 2N6648
VCE = -60 Vdc 2N6649
VCE = -80 Vdc 2N6650
ICEO
-1.0
-1.0
-1.0
mAdc
Collector-Emitter Cutoff Current
VCE = -40 Vdc, VBE = 1.5 Vdc 2N6648
VCE = -60 Vdc, VBE = 1.5 Vdc 2N6649
VCE = -80 Vdc, VBE = 1.5 Vdc 2N6650
ICEX
-0.3
-0.3
-0.3
mAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = -1.0 Adc, VCE = 3.0 Vdc
IC = -5.0 Adc, VCE = 3.0 Vdc
IC = -10 Adc, VCE = 3.0 Vdc
hFE
300
1,000
100
20,000
Collector-Emitter Saturation Voltage
IC =-5 .0 Adc, IB = -10 mAdc
IC = -10 Adc, IB = -0.1 Adc VCE(sat)
-2.0
-3.0 Vdc
Base-Emitter Voltage
IC = -5.0 Adc, VCE = -3.0 Vdc
IC = -10 Adc, VCE = -3.0 Vdc VBE(on)
-2.8
-4.5 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC =- 1.0 Adc, VCE = -5.0 Vdc, f = 1.0 MHz hfe 50 400
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz Cobo 300 pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = -30 Vdc; IC = -5.0 Adc; IB1 =- 20 mAdc ton 2.5 µs
Turn-Off Time
VCC = -30 Vdc; IC = -5.0 Adc; IB1 = -IB2 = 20 mAdc toff 10 µs
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = -8.5 Vdc, IC = -10 Adc
Test 2
VCE = -25 Vdc, IC = -3.4 Adc
Test 3
VCE = -40 Vdc, IC = -0.9 Adc 2N6648
VCE = -60 Vdc, IC = -0.3 Adc 2N6449
VCE = -80 Vdc, IC = -0.14 Adc 2N6650
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2