
DG406/407
Vishay Siliconix
Document Number: 70061
S-00399—Rev. H, 13-Sep-99 www.siliconix.com S FaxBack 408-970-5600
5-3
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V–
V+ 44 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND 25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputsa, VS, VD(V–) –2 V to (V+) +2 V or. . . . . . . . . . . . . . . . . . . . . . . .
20 mA, whichever occurs first
Current (Any Terminal,) 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle Max) 100 mA. . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature (AK, AZ Suffix) –65 to 150_C. . . . . . . . . . . . . .
(DJ, DN Suffix) –65 to 125_C. . . . . . . . . . . . . .
Power Dissipation (Package)b
28-Pin Plastic DIPc625 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28-Pin CerDIPd1.2 W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28-Pin Plastic PLCCc450 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LCC-28e1.35 W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28-Pin Widebody SOIC 450 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Signals on SX, DX or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 6 mW/_C above 75_C
d. Derate 12 mW/_C above 75_C
e. Derate 13.5 mW/_C above 75_C
SPECIFICATIONSa
Test Conditions
Unless Otherwise Specified A Suffix
–55 to 125_CD Suffix
–40 to 85_C
Parameter Symbol V+ = 15 V, V– = –15 V
VAL = 0.8 V, VAH = 2.4 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full –15 15 –15 15 V
Drain-Source On-Resistance rDS(on) VD = "10 V, IS = –10 mA
Sequence Each Switch On Room
Full 50 100
125 100
125 W
rDS(on) Matching Between
ChannelsgDrDS(on) VD = "10 V Room 5 %
Source Off
Leakage Current IS(off)
Room
Full 0.01 –0.5
–50 0.5
50 –0.5
–5 0.5
5
Drain Off
VEN = 0 V
VD = "10 V
V
= #10 V DG406 Room
Full 0.04 –1
–200 1
200 –1
–40 1
40
Leakage Current
D(off)
DG407 Room
Full 0.04 –1
–100 1
100 –1
–20 1
20 nA
Drain On
VS = VD = "10 V
DG406 Room
Full 0.04 –1
–200 1
200 –1
–40 1
40
Leakage Current
D(on)
Switch On DG407 Room
Full 0.04 –1
–100 1
100 –1
–20 1
20
Digital Control
Logic High Input Voltage VINH Full 2.4 2.4
Logic Low Input Voltage VINL Full 0.8 0.8
Logic High Input Current IAH VA = 2.4 V, 15 V Full –1 1 –1 1
Logic Low Input Current IAL VEN = 0 V, 2.4 V, VA = 0 V Full –1 1 –1 1 m
Logic Input Capacitance Cin f = 1 MHz Room 7 pF
Dynamic Characteristics
Transition Time tTRANS See Figure 2 Room
Full 200 350
450 350
450
Break-Before-Make Interval tOPEN See Figure 4 Room
Full 50 25
10 25
10
Enable T urn-On T ime tON(EN)
Room
Full 150 200
400 200
400
ns
Enable T urn-Of f Time tOFF(EN)
Room
Full 70 150
300 150
300
Charge Injection Q CL = 1 nF, VS = 0 V, Rs = 0 WRoom 15 pC
Off IsolationhOIRR VEN = 0 V, RL = 1 kW
f = 100 kHz Room –69 dB
Source Off Capacitance CS(off) VEN = 0 V, VS = 0 V, f = 1 MHz Room 8
Room 130
D(off) VEN = 0 V, VD = 0 V
DG407 Room 65 pF
f = 1 MHz DG406 Room 140
D(on) DG407 Room 70