This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- PAO S ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear ReMOS [F FIELD EFFECT POWER TRANSISTOR el IRFP 250,251 D88FN2,.M2 30 AMPERES 200, 150 VOLTS RpDS(ON) = 9.085 0 N-CHANNEL Ao @ CASE STYLE T0O-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) applications such as audio amplifiers and servo motors. 057 (1.45)-2] j= bee e815 (15.62) 0} 128 (9.25) Features _* toa on ae Peery 6.46) e Polysilicon gate Improved stability and reliability 25 \ | e No secondary breakdown Excellent ruggedness | : . a Ultra-fast switching Independent of temperature as, e Voltage controlled High transconductance 927 | | (18.93) e Low input capacitance Reduced drive requirement e Excellent thermal stability Ease of paralleling 4 11007) ays 5) {fo | Pees 018 (0.46) 1 fo 048 (1.22) ~ fF i 210 (" (5.56) UNIT TYPE | TERM.1 [ TERM.2 | TERM.3 | TAB POWER MOS FET | 10 247 GATE DRAIN | SOURCE | DRAIN maximum ratings (Tc = 25 C) (unless otherwise specified) RATING SYMBOL IRFP250/D88FN2 | iRFP251/D88FM2 UNIT Drain-Source Voitage Voss 200 150 Volts Drain-Gate Voltage, Rag = 1MO VpoGR 200 150 Volts Continuous Drain Current @ To = 25C Ip 30 30 A @ Tc = 100C 19 19 A Pulsed Drain Current lpm 120 120 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 150 150 Watts Derate Above 25C 1.2 1.2 W/C Operating and Storage Junction Temperature Range Ty, TstG -55 to 150 -55 to 150 c thermal characteristics Thermal Resistance, Junction to Case Rac 0.83 0.83 C/W Thermal Resistance, Junction to Ambient Roa 40 40 . C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 305electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC {symBot | MIN | TYP MAX UNIT | off characteristics Drain-Source Breakdown Voltage IRFP251/D88FM2 BVpss 150 _ Volts (Vas = OV, Ip = 250 uA) IRFP250/D88FN2 200 _ Zero Gate Voltage Drain Current Ipss . (Vps = Max Rating, Vgg = OV, To = 25C) _ _ 250 LA (Vps = Max Rating, 0.8, Vgg = OV, To = 125C) 1000 Gate-Source Leakage Current _ _ on characteristics Gate Threshold Voltage To = 25C | VasctH) 2.0 _ 4.0 Volts (Vos = Vas, Ip = 250 wA) On-State Drain Current _ _ (Vas = 10V, Vps = 10V) incon) | 90 A Static Drain-Source On-State Resistance _ (Vas = 10V, Ip = 16A) Rps(ON) 0.075 0.085 Ohms Forward Transconductance _ (Vps = 10V, Ip = 16A) Ofs 7.2 10 mhos dynamic characteristics Input Capacitance Vas = OV Ciss _ 2800 3000 pF Output Capacitance Vos = 25V Coss _ 520 1200 pF Reverse Transfer Capacitance f=1 MHz Crss 120 500 pF switching characteristics Turn-on Delay Time Vps = 90V td(on) _ 20 _ ns Rise Time Ip = 16A, Veg = 15V tr _ 75 _ ns Turn-off Delay Time RaGen = 500, Reg = 12.52 | taoffy _ 90 _ ns Fall Time (Res (EQUIV.) = 100) tf _ 65 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is _ _ 30 A Pulsed Source Current Ism _ _ 120 A Diode Forward Voltage . _ (To = 28C, Vag = OV, Ig = 40A) Vsp 1.3 2.0 Volts Reverse Recovery Time trr _ 345 _ ns (Ig = 30A, dig/dt = 100A/us, To = 125C) Qrr _ 4.5 uC Pulse Test: Pulse width = 300 ys, duty cycle < 2% ip. DRAIN CURRENT (AMPERES) RATION IN THIS AREA MAY BE LIMITED BY Rogion; 100ms IRFP251/D88FM2 IRFP250/D88FN2 400 600 1000 ) | SINGLE PULSE To= 25C 1 2 4 6 810 20 40 60 80100 Vpg- ORAIN SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 306 ) CONDITIONS: Rog(on) CONDITIONS: Ip = 16 A, Vgg = 10V V@g(TH) CONDITIONS: Ip = 250uA, Vog = Vag 1.8 1.6 14 1.2 1.0 0.8 Rosion) AND Vaginiy) NORMALIZED 0.4 0.2 40 9 40 80 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rygion, AND Vagiry VS. TEMP. 120 160