DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product specification Supersedes data of 2003 Jan 20 2003 May 13 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z FEATURES QUICK REFERENCE DATA * Low collector-emitter saturation voltage SYMBOL * High collector current capability: IC and ICM VCEO collector-emitter voltage -50 V IC collector current (DC) -3 A * Higher efficiency leading to less heat generation ICM peak collector current -5 A * Reduced PCB area requirements compared to DPAK. RCEsat equivalent on-resistance <150 m * High collector current gain (hFE) at high IC PARAMETER MAX. UNIT PINNING APPLICATIONS * Power management PIN DESCRIPTION - DC/DC converters 1 base - Supply line switching 2 collector - Battery charger 3 emitter - Linear voltage regulation (LDO). 4 collector * Peripheral drivers - Driver in low supply voltage applications, e.g. lamps, LEDs 4 handbook, halfpage - Inductive load driver, e.g. relays, buzzers, motors. 2, 4 DESCRIPTION 1 PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4350Z. 3 1 Top view MARKING TYPE NUMBER PBSS5350Z 2003 May 13 MARKING CODE Fig.1 PB5350 2 2 3 MAM288 Simplified outline (SOT223) and symbol. Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - -60 V VCEO collector-emitter voltage open base - -50 V VEBO emitter-base voltage open collector - -6 V IC collector current (DC) - -3 A ICM peak collector current - -5 A IBM peak base current - -1 A Ptot total power dissipation Tamb 25 C; notes 1 and 3 - 1.35 W Tamb 25 C; notes 2 and 3 - 2 W Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see "Thermal considerations for SOT223 in the General Part of associated Handbook". THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air; notes 1 and 3 92 K/W in free air; notes 2 and 3 62.5 K/W Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see "Thermal considerations for SOT223 in the General Part of associated Handbook". 2003 May 13 3 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS collector-base cut-off current VCB = -50 V; IE = 0 MAX. UNIT - - -100 nA - - -50 A - - -100 nA IC = -500 mA 200 - - IC = -1 A; note 1 200 - - emitter-base cut-off current VEB = -5 V; IC = 0 hFE DC current gain VCE = -2 V; IC = -2 A; note 1 collector-emitter saturation voltage TYP. VCB = -50 V; IE = 0; Tj = 150 C IEBO VCEsat MIN. 100 - - IC = -500 mA; IB = -50 mA - - -100 mV IC = -1 A; IB = -50 mA - - -180 mV IC = -2 A; IB = -200 mA; note 1 - - -300 mV RCEsat equivalent on-resistance IC = -2 A; IB = -200 mA; note 1 - 120 <150 m VBEsat base-emitter saturation voltage IC = -2 A; IB = -200 mA; note 1 - - -1.2 V VBEon base-emitter turn-on voltage VCE = -2 V; IC = -1 A; note 1 - - -1.1 V fT transition frequency IC = -100 mA; VCE = -5 V; f = 100 MHz 100 - - MHz Cc collector capacitance VCB = -10 V; IE = Ie = 0; f = 1 MHz - - 40 pF Note 1. Pulse test: tp 300 s; 0.02. 2003 May 13 4 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z MGW167 1000 MGW168 -1.2 handbook, halfpage handbook, halfpage hFE VBE (V) 800 (1) -0.8 (1) 600 (2) (2) 400 -0.4 (3) (3) 200 0 -10 -1 -1 -10 -102 0 -10 -1 -103 -104 I C (mA) -1 VCE = -2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = -2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MGW169 -103 handbook, halfpage -10 -102 -103 -104 I C (mA) Base-emitter voltage as a function of collector current; typical values. MGW170 -1.4 VBEsat (V) -1.2 handbook, halfpage VCEsat (mV) -1.0 -102 (1) (1) -0.8 (2) (2) (3) -0.6 -10 (3) -0.4 -1 -10 -1 -1 -10 -102 -0.2 -10 -1 -103 -104 I C (mA) -1 IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2003 May 13 5 -10 -102 -103 -104 I C (mA) Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z MGW171 -1000 handbook, halfpage (3) -800 (1) (2) (3) IC (A) (2) IC (mA) MGW172 -5 (1) handbook, halfpage (4) (5) (6) (7) -4 (4) (8) (5) (9) (6) -600 -3 (7) (10) (8) -400 -2 (9) (10) (11) -200 -1 (12) 0 0 -0.4 0 -0.8 -1.2 -1.6 -2 VCE (V) Tamb = 25 C. (1) (2) (3) (4) (5) (6) (7) (8) IB = -2.64 mA. IB = -2.31 mA. IB = -1.98 mA. IB = -1.65 mA. (1) IB = -250 mA. (2) IB = -225 mA. (3) IB = -200 mA. (4) IB = -175 mA. (9) IB = -1.32 mA. (10) IB = -0.99 mA. (11) IB = -0.66 mA. (12) IB = -0.33 mA. Collector current as a function of collector-emitter voltage; typical values. Fig.7 MGU390 103 handbook, halfpage RCEsat () 102 10 1 (1) 10-1 -10-1 (2) (3) -1 -10 -102 -103 -104 IC (mA) IC/IB = 20. (1) Tamb = 150 C. Fig.8 (2) Tamb = 25 C. (3) Tamb = -55 C. Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 May 13 -0.8 -1.2 -1.6 -2 VCE (V) Tamb = 25 C. IB = -3.96 mA. IB = -3.63 mA. IB = -3.30 mA. IB = -2.97 mA. Fig.6 -0.4 0 6 (5) IB = -150 mA. (6) IB = -125 mA. (7) IB = -100 mA. (8) IB = -75 mA. (9) IB = -50 mA. (10) IB = -25 mA. Collector current as a function of collector-emitter voltage; typical values. Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 2003 May 13 REFERENCES IEC JEDEC EIAJ SC-73 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 May 13 8 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z NOTES 2003 May 13 9 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z NOTES 2003 May 13 10 Philips Semiconductors Product specification 50 V low VCEsat PNP transistor PBSS5350Z NOTES 2003 May 13 11 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 (c) Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/04/pp12 Date of release: 2003 May 13 Document order number: 9397 750 11058