VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RE
C
TIFIER
S
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5802 thru 1N5806
1N5802 – 1N5806
Copyright © 2007
1-15-2007 REV A
DESCRIPTION APPEARANCE
These “Ultrafast Recovery” rectifier diodes are military qualified to MIL-PRF-19500/477
and are ideal for high-reliability applications where a failure cannot be tolerated. These
industry-recognized 2.5 Amp rated rectifiers for working peak reverse v oltages from 50 to
150 volts are hermetically sealed with voidless-glass construction using an internal
“Category I” metall urgical bon d. They are also avail able in surface-mount packages (see
separate data sheet for 1N5802US thru 1N5806US). Microsemi also offers numerous
other rectifier products to meet higher and lower current ratings with various recovery
time speed requirements including standard, fast and ultrafast in thru-hole and surface-
mount packages.
“A” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
• Popular JEDEC registered 1N5802 to 1N5806 series
• Voidless hermetically s ealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, JANTXV, and JANS available per MIL-PRF-
19500/477
• Surface mount equivalents also avai lable in a square end-cap
MELF configuration with “US” suffix (see separate data sheet
for 1N5802US thru 1N5806US)
• Ultrafast recovery 2.5 Amp rectifier series 50 to 150V
• Military and other high-reliability applications
• Switching power supplies or other applications
requiring extremely fast switching & low forward loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Junction Temperature: -65oC to +175oC
• Storage Temperature: -65oC to +175oC
• Average Rectified For ward Current (IO): 2.5 A @ TL = 75ºC
• Thermal Resistance: 36 ºC/W junctio n to lea d (L= .375 in)
• Thermal Impedance: 4.5oC/W @ 10 ms heating time
• Forward Surge Current: 35 Amps @ 8.3 ms half-sine
• Capacitance: 25 pF @ VR = 10 Volts, f = 1 MHz
• Solder temperature: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs (package dim ensions on last page)
• TERMINATIONS: Axial-le ads are Tin/Lead (Sn/Pb)
over Copper. Note: Previous JANS inventor y had
solid Silver axial-leads and no finish.
• MARKING: Body painted and part number, etc.
• POLARITY: Cathode indicated by band
• Tape & Reel option: Standard per EIA-296
• Weight: 340 mg
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
BREAKDOWN
VOLTAGE
(MIN.)
@ 100μA
VBR
AVERAGE
RECTIFIED
CURRENT
IO1 @
TL=+75ºC
(NOTE 1)
AVERAGE
RECTIFIED
CURRENT
IO2 @
TA=+55ºC
(Note 2)
MAXIMUM
FORWARD
VOLTAGE
@ 1 A
(8.3 ms pulse)
VF
REVERSE
CURRENT
(MAX)
@ VRWM
IR
SURGE
CURRENT
(MAX)
IFSM
(NOTE 3)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
trr
VOLTS VOLTS AMPS AMPS VOLTS μA AMPS ns
25oC 100oC25
oC 100oC
1N5802
1N5803
1N5804
1N5805
1N5806
50
75
100
125
150
55
80
110
135
160
2.5
2.5
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
0.875
0.875
0.875
0.800
0.800
0.800
1
1
1
1
1
50
50
50
50
50
35
35
35
35
35
25
25
25
25
25
NOTE 1: IO1 is rated at 2.5 A @ TL = 75ºC at 3/8 inch lead length. Derate at 25 mA/ºC for TL above 75ºC.
NOTE 2: IO2 is rated at 1.0 A @ TA = 55ºC for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC. Derate at 8.33 mA/ºC for TA above 55ºC.
NOTE 3: TA = 25oC @ IO = 1.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: IF = 0.5 A, IRM = 0.5 A, IR(REC) = .05 A
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RECTIFIERS
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5802 thru 1N5806
1N5802 – 1N5806
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimu m voltage the device will exhibit at a specified current
VRWM Working Peak Reverse Voltage: The maximum peak voltage that can be applie d over the operating temperature
range
IOAverage Rectified Output Current: Output Current Averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle
VFMaximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current
IRMaximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature
C Capacitance: The capacitanc e in pF at a frequency of 1 MHz and specified voltage
trr Reverse Recovery Time: The time interval between the instant the current passes through zero when changing
from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse
current occurs.
GRAPHS
FIGURE 1
OUTPUT CURRENT v s. LEAD TEMP.
PACKAGE DIMENSIONS inches/[mm]
NOTE: Lead tolerance = +0.002/-0.003 inches
Microsemi
Scottsdale Division Page 2
Copyright © 2007
1-15-2007 REV A 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Microsemi:
JAN1N5802 1N5804 JANS1N5806 1N5803 JANTX1N5802 JAN1N5806 1N5806 JANS1N5804 1N5805
JANTXV1N5806 JANTXV1N5804 JANTXV1N5802 JANTX1N5804 JANS1N5802 JAN1N5804 JANTX1N5806
1N5802 1N5806/TR 1N5806e3/TR
