Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GD 60 DLC Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 600 V Tc= 65C IC,nom. 100 A Tc= 25C IC 130 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP= 1ms, Tc= 65C ICRM 200 A Gesamt-Verlustleistung total power dissipation Tc= 25C, Transistor Ptot 430 W VGES +/- 20V V IF 100 A IFRM 200 A I2t 3.200 A2s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP= 1ms Grenzlastintegral der Diode 2 I t - value, Diode VR= 0V, tp= 10ms, Tvj= 125C Isolations-Prufspannung insulation test voltage RMS, f= 50Hz, t= 1min. Charakteristische Werte / Characteristic values min. typ. max. - 1,95 2,45 V - 2,20 - V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage IC= 100A, VGE= 15V, Tvj= 25C IC= 100A, VGE= 15V, Tvj= 125C VCE sat Gate-Schwellenspannung gate threshold voltage IC= 1,5mA, VCE= VGE, Tvj= 25C Eingangskapazitat input capacitance f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V Cies - 4,3 - nF Ruckwirkungskapazitat reverse transfer capacitance f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V Cres - 0,4 - nF - 1 500 A - 1 - mA - - 400 nA Kollektor-Emitter Reststrom collector-emitter cut-off current VCE= 600V, VGE= 0V, Tvj= 25C VCE= 600V, VGE= 0V, Tvj= 125C Gate-Emitter Reststrom gate-emitter leakage current VCE= 0V, VGE= 20V, Tvj= 25C prepared by: Andreas Vetter date of publication: 2000-04-26 approved by: Michael Hornkamp revision: 1 1 (8) ICES IGES BSM 100 GD 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GD 60 DLC Charakteristische Werte / Characteristic values min. typ. max. - 25 - ns - 25 - ns - 10 - ns - 11 - ns - 130 - ns - 150 - ns - 20 - ns - 30 - ns Eon - 1,0 - mJ Eoff - 2,9 - mJ ISC - 450 - A LCE - 28 - nH RCC'+EE' - 1,8 - m min. typ. max. - 1,25 1,6 V - 1,20 - V - 150 - A - 180 - A - 7,7 - C - 13 - C - - - mJ - 3,2 - mJ Transistor / Transistor IC= 100A, VCC= 300V Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) VGE= 15V, RG= 2,2, Tvj= 25C td,on VGE= 15V, RG= 2,2, Tvj= 125C IC= 100A, VCC= 300V Anstiegszeit (induktive Last) rise time (inductive load) VGE= 15V, RG= 2,2, Tvj= 25C tr VGE= 15V, RG= 2,2, Tvj= 125C IC= 100A, VCC= 300V Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) VGE= 15V, RG= 2,2, Tvj= 25C td,off VGE= 15V, RG= 2,2, Tvj= 125C IC= 100A, VCC= 300V Fallzeit (induktive Last) fall time (inductive load) VGE= 15V, RG= 2,2, Tvj= 25C tf VGE= 15V, RG= 2,2, Tvj= 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC= 100A, VCC= 300V, VGE= 15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC= 100A, VCC= 300V, VGE= 15V Kurzschluverhalten SC Data RG= 2,2, Tvj= 125C, L = 15nH RG= 2,2, Tvj= 125C, L = 15nH tP 10sec, VGE 15V Tvj125C, VCC=360V, VCEmax= VCES -LCE *di/dt Modulinduktivitat stray inductance module Modul-Leitungswiderstand, Anschlusse - Chip lead resistance, terminals - chip Tc= 25C Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage IF= 100A, VGE= 0V, Tvj= 25C IF= 100A, VGE= 0V, Tvj= 125C VF IF= 100A, -diF/dt= 4400A/sec Ruckstromspitze peak reverse recovery current VR= 300V, VGE= -10V, Tvj= 25C IRM VR= 300V, VGE= -10V, Tvj= 125C IF= 100A, -diF/dt= 4400A/sec Sperrverzogerungsladung recoverred charge VR= 300V, VGE= -10V, Tvj= 25C Qr VR= 300V, VGE= -10V, Tvj= 125C IF= 100A, -diF/dt= 4400A/sec Abschaltenergie pro Puls reverse recovery energy VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C 2 (8) Erec BSM 100 GD 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GD 60 DLC Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,29 K/W - - 0,55 K/W Innerer Warmewiderstand thermal resistance, junction to case Transistor / transistor, DC Diode / diode, DC RthJC Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Modul / per module Paste= 1W/m*K / grease= 1W/m*K RthCK - 0,01 Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj - - 150 C Betriebstemperatur operation temperature Top -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 125 C K/W Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Al2O3 CTI comperative tracking index Anzugsdrehmoment fur mech. Befestigung mounting torque 225 Schraube M5 screw M5 4 M Nm -15 Gewicht weight G +15 % 310 Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (8) BSM 100 GD 60 DLC 2000-02-08 g Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GD 60 DLC Ausgangskennlinie (typisch) Output characteristic (typical) I C= f (VCE) VGE= 15V 200 180 Tvj = 25C 160 Tvj = 125C IC [A] 140 120 100 80 60 40 20 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) I C= f (VCE) Tvj= 125C 200 180 VGE = 8V 160 VGE = 9V VGE = 10V 140 VGE = 12V VGE = 15V 120 VGE = 20V 100 80 60 40 20 0 0,0 0,5 1,0 1,5 2,0 2,5 4 (8) 3,0 3,5 4,0 4,5 5,0 BSM 100 GD 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GD 60 DLC Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C= f (VGE) VCE= 20V 200 180 Tvj = 25C Tvj = 125C 160 IC [A] 140 120 100 80 60 40 20 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) I F= f (VF) 200 180 Tvj = 25C Tvj = 125C 160 IF [A] 140 120 100 80 60 40 20 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 VF [V] 5 (8) BSM 100 GD 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GD 60 DLC Schaltverluste (typisch) Switching losses (typical) E on= f (IC), Eoff= f (IC), Erec= f (IC) RG,on= 2,2, ,= , VCC= 300V, Tvj= 125C , =RG,off = 2,2 5,0 4,5 Eon Eoff 4,0 Erec E [mJ] 3,5 3,0 2,5 2,0 1,5 1,0 0,5 0,0 0 20 40 60 80 100 120 140 160 180 200 IC [A] Schaltverluste (typisch) Switching losses (typical) E on= f (RG), Eoff= f (RG), Erec= f (RG) IC= 100A , VCC= 300V , Tvj = 125C 4,0 3,5 3,0 E [mJ] 2,5 2,0 1,5 1,0 Eon Eoff 0,5 Erec 0,0 0 1 2 3 4 5 6 7 8 9 10 RG [ ] 6 (8) BSM 100 GD 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GD 60 DLC Transienter Warmewiderstand Transient thermal impedance Z thJC = f (t) 1 ZthJC [K / W] 0,1 Zth:IGBT Zth:Diode 0,01 0,001 0,001 0,01 0,1 1 10 t [sec] i ri [K/kW] i [sec] ri [K/kW] i [sec] : IGBT 1 12,3 2 152,0 3 102,2 4 23,5 : IGBT 0,0018 0,0240 0,0651 0,6626 : Diode 193,8 185,9 116,8 53,5 : Diode 0,0487 0,0169 0,1069 0,9115 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE= +15V, R G,off = 2,2, , Tvj= 125C 220 200 180 160 140 120 IC [A] 100 80 IC,Modul 60 IC,Chip 40 20 0 0 100 200 300 400 500 600 700 VCE [V] 7 (8) BSM 100 GD 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GD 60 DLC Gehausemae / Schaltbild Package outline / Circuit diagram Econo 3 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 19.05 3.81 19 18 17 16 15 1 2 3 4 5 6 7 8 9 10 11 12 3.81 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally P+ / 21 1 2 5 6 9 10 3 4 7 8 11 12 N- / 20 P+ / 13 19 17 15 N- / 14 IS8 8 (8) BSM 100 GD 60 DLC 2000-02-08 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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