BSM100GD60DLC - Eupec Power Semiconductors

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM 100 GD 60 DLC

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Kollektor-Emitter-Sperrspannung

collector-emitter voltage VCES 600 V

Tc= 65°C IC,nom. 100 A

Tc= 25°C IC130 A

Periodischer Kollektor Spitzenstrom

repetitive peak collector current tP= 1ms, Tc= 65°C ICRM 200 A

Gesamt-Verlustleistung

total power dissipation Tc= 25°C, Transistor Ptot 430 W

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage VGES +/- 20V V

Dauergleichstrom

DC forward current IF100 A

Periodischer Spitzenstrom

repetitive peak forw. current tP= 1ms IFRM 200 A

Grenzlastintegral der Diode

I2t - value, Diode VR= 0V, tp= 10ms, Tvj= 125°C I2t3.200 A2s

Isolations-Prüfspannung

insulation test voltage RMS, f= 50Hz, t= 1min. VISOL 2,5 kV

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

IC= 100A, VGE= 15V, Tvj= 25°C - 1,95 2,45 V

IC= 100A, VGE= 15V, Tvj= 125°C - 2,20 - V

Gate-Schwellenspannung

gate threshold voltage IC= 1,5mA, VCE= VGE, Tvj= 25°C VGE(th) 4,5 5,5 6,5 V

Eingangskapazität

input capacitance f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Cies - 4,3 - nF

Rückwirkungskapazität

reverse transfer capacitance f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Cres - 0,4 - nF

VCE= 600V, VGE= 0V, Tvj= 25°C - 1 500 µA

VCE= 600V, VGE= 0V, Tvj= 125°C -1-mA

Gate-Emitter Reststrom

gate-emitter leakage current VCE= 0V, VGE= 20V, Tvj= 25°C IGES - - 400 nA

prepared by: Andreas Vetter date of publication: 2000-04-26

approved by: Michael Hornkamp revision: 1

Kollektor-Dauergleichstrom

DC-collector current

VCE sat

ICES

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

Kollektor-Emitter Reststrom

collector-emitter cut-off current

1 (8) BSM 100 GD 60 DLC

2000-02-08

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM 100 GD 60 DLC

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

IC= 100A, VCC= 300V

VGE= ±15V, RG= 2,2Ω, Tvj= 25°C td,on -25-ns

VGE= ±15V, RG= 2,2Ω, Tvj= 125°C -25-ns

IC= 100A, VCC= 300V

VGE= ±15V, RG= 2,2Ω, Tvj= 25°C tr-10-ns

VGE= ±15V, RG= 2,2Ω, Tvj= 125°C -11-ns

IC= 100A, VCC= 300V

VGE= ±15V, RG= 2,2Ω, Tvj= 25°C td,off - 130 - ns

VGE= ±15V, RG= 2,2Ω, Tvj= 125°C - 150 - ns

IC= 100A, VCC= 300V

VGE= ±15V, RG= 2,2Ω, Tvj= 25°C tf-20-ns

VGE= ±15V, RG= 2,2Ω, Tvj= 125°C -30-ns

IC= 100A, VCC= 300V, VGE= 15V

RG= 2,2Ω, Tvj= 125°C, Lσ= 15nH

IC= 100A, VCC= 300V, VGE= 15V

RG= 2,2Ω, Tvj= 125°C, Lσ= 15nH

tP ≤ 10µsec, VGE ≤ 15V

Tvj≤125°C, VCC=360V, VCEmax= VCES -LσCE ·di/dt

Modulinduktivität

stray inductance module LσCE - 28 - nH

Modul-Leitungswiderstand, Anschlüsse - Chip

lead resistance, terminals - chip Tc= 25°C RCC'+EE' - 1,8 - mΩ

Charakteristische Werte / Characteristic values

Diode / Diode min. typ. max.

Durchlaßspannung IF= 100A, VGE= 0V, Tvj= 25°C - 1,25 1,6 V

forward voltage IF= 100A, VGE= 0V, Tvj= 125°C - 1,20 - V

IF= 100A, -diF/dt= 4400A/µsec

VR= 300V, VGE= -10V, Tvj= 25°C IRM - 150 - A

VR= 300V, VGE= -10V, Tvj= 125°C - 180 - A

IF= 100A, -diF/dt= 4400A/µsec

VR= 300V, VGE= -10V, Tvj= 25°C Qr- 7,7 - µC

VR= 300V, VGE= -10V, Tvj= 125°C -13-µC

IF= 100A, -diF/dt= 4400A/µsec

VR= 300V, VGE= -10V, Tvj= 25°C Erec ---mJ

VR= 300V, VGE= -10V, Tvj= 125°C - 3,2 - mJ

Abschaltenergie pro Puls

reverse recovery energy

Rückstromspitze

peak reverse recovery current

Sperrverzögerungsladung

recoverred charge

ISC - 450 -

- 2,9 - mJ

- 1,0 - mJ

Einschaltverzögerungszeit (ind. Last)

turn on delay time (inductive load)

Anstiegszeit (induktive Last)

rise time (inductive load)

Abschaltverzögerungszeit (ind. Last)

turn off delay time (inductive load)

Fallzeit (induktive Last)

fall time (inductive load)

Eoff

Eon

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

Kurzschlußverhalten

SC Data

2 (8) BSM 100 GD 60 DLC

2000-02-08

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM 100 GD 60 DLC

Thermische Eigenschaften / Thermal properties min. typ. max.

- - 0,29 K/W

- - 0,55 K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink pro Modul / per module

λPaste= 1W/m*K / λgrease= 1W/m*K RthCK - 0,01 K/W

Höchstzulässige Sperrschichttemperatur

maximum junction temperature Tvj - - 150 °C

Betriebstemperatur

operation temperature Top -40 - 125 °C

Lagertemperatur

storage temperature Tstg -40 - 125 °C

Mechanische Eigenschaften / Mechanical properties

4Nm

-15 +15 %

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.

Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics.

It is valid in combination with the belonging technical notes.

RthJC

Transistor / transistor, DC

Diode / diode, DC

Gehäuse, siehe Anlage

case, see appendix

Innere Isolation

internal insulation

Innerer Wärmewiderstand

thermal resistance, junction to case

CTI

comperative tracking index

Gewicht

weight G

Schraube M5

screw M5

Anzugsdrehmoment für mech. Befestigung

mounting torque

Al2O3

225

g310

3 (8) BSM 100 GD 60 DLC

2000-02-08

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM 100 GD 60 DLC

IC [A]

VCE [V]

100

120

140

160

180

200

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5

Tvj = 25°C

Tvj = 125°C

Ausgangskennlinie (typisch) IC= f (VCE)

Output characteristic (typical) VGE= 15V

100

120

140

160

180

200

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0

VGE = 8V

VGE = 9V

VGE = 10V

VGE = 12V

VGE = 15V

VGE = 20V

Ausgangskennlinienfeld (typisch) IC= f (VCE)

Output characteristic (typical) Tvj= 125°C

4 (8) BSM 100 GD 60 DLC

2000-02-08

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM 100 GD 60 DLC

IC [A]

VGE [V]

IF [A]

VF [V]

100

120

140

160

180

200

5 6 7 8 9 10 11 12 13

Tvj = 25°C

Tvj = 125°C

Übertragungscharakteristik (typisch) IC= f (VGE)

Transfer characteristic (typical) VCE= 20V

100

120

140

160

180

200

0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6

Tvj = 25°C

Tvj = 125°C

Durchlaßkennlinie der Inversdiode (typisch) IF= f (VF)

Forward characteristic of inverse diode (typical)

5 (8) BSM 100 GD 60 DLC

2000-02-08

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM 100 GD 60 DLC

E [m J]

IC [A]

E [m J]

RG [Ω

ΩΩ

Ω]

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

5,0

0 20 40 60 80 100 120 140 160 180 200

Eon

Eoff

Erec

Schaltverluste (typisch) E on= f (IC), Eoff= f (IC), Erec= f (IC)

Switching losses (typical) RG,on= 2,2Ω,

Ω,Ω,

Ω,=

=RG,off= 2,2Ω

ΩΩ

Ω, VCC= 300V, Tvj= 125°C

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

012345678910

Eon

Eoff

Erec

Schaltverluste (typisch) Eon= f (RG), Eoff= f (RG), Erec= f (RG)

Switching losses (typical) IC= 100A , VCC= 300V , Tvj = 125°C

6 (8) BSM 100 GD 60 DLC

2000-02-08

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM 100 GD 60 DLC

ZthJC

[K / W]

t [sec]

i 1234

ri [K/kW] : IGBT 12,3 152,0 102,2 23,5

τi [sec] : IGBT 0,0018 0,0240 0,0651 0,6626

ri [K/kW] : Diode 193,8 185,9 116,8 53,5

τi [sec] : Diode 0,0487 0,0169 0,1069 0,9115

IC [A]

VCE [V]

Sicherer Arbeitsbereich (RBSOA)

Reverse bias safe operation area (RBSOA) VGE= +15V, RG,off= 2,2Ω,

Ω,Ω,

Ω, Tvj= 125°C

Transienter Wärmewiderstand Z thJC = f (t)

Transient thermal impedance

100

120

140

160

180

200

220

0 100 200 300 400 500 600 700

IC,Modul

IC,Chip

0,001

0,01

0,1

0,001 0,01 0,1 1 10

Zth:IGBT

Zth:Diode

7 (8) BSM 100 GD 60 DLC

2000-02-08

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM 100 GD 60 DLC

Gehäusemaße / Schaltbild

Package outline / Circuit diagram

connections to be made externa lly

P+ / P+ /

N- / N- /

IS8

119

94.5

118.11

123 5

612

3.8115.24 5 x 15.24 =76.2

110

19.05 3.81

4 x 19.0 5 = 7 6.2

99.9

121.5

1.15x1.0

789 1110

17 16 15

Econo 3

8 (8) BSM 100 GD 60 DLC

2000-02-08

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Attention

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warranty is granted exclusively pursuant the terms and conditions of the supply

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Due to technical requirements the products may contain dangerous substances.

For information on the types in question please contact your local Sales Office via

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