SERIAL PRESENCE DETECT M392B2G70DM0-YK002 Organization : 2G x 72 Composition : DDP 2G x 4 * 18ea Used component part # : K4B8G0446D-MYK0 # of rows in module : 2 Row # of banks in component : 8 Banks Feature : 18.75mm height & double sided component Refresh : 8K/64ms Bin Sort : K0(DDR3 1600@CL=11) RCD Vendor and Revision : IDT Alpine Byte # Function Supported Hex Value YK002 YK002 CRC coverage 0~116Byte, SP D Byte Total :256Byte, SPD Byte Use : 176Byte 92h Function Described Note Number of Serial PD Bytes Written / SPD Device Size / CRC Coverage 0 1 SPD Revision 2 Key Byte / DRAM Device Type Version 1.2 12h DDR3 SDRAM 0Bh 3 Key Byte / Module Type 4 SDRAM Density and Banks Registered DIMM 01h 4Gb 8banks 5 SDRAM Addressing 04h Row : 16, Column : 11 6 Module Nominal Voltage, VDD 22h 1.35V and 1.5V 7 02h Module Organization 2Rank / x4 08h 8 Module Memory Bus Width ECC, 64bit 0Bh 9 Fine Timebase Dividend and Divisor 1ps 11h 10 Medium Timebase Dividend 1/8 (0.125ns) 01h 11 Medium Timebase Divisor 1/8 (0.125ns) 08h 12 SDRAM Minimum Cycle Time (tCKmin) 1.25ns 0Ah 13 Reserved 14 Reserved 00h CAS Latencies Supported, Least Significant Byte 6, 7, 8, 9, 10, 11 FCh 15 CAS Latencies Supported, Most Significant Byte 6, 7, 8, 9, 10, 11 00h 16 Minimum CAS Latency Time(tAAmin) 13.125ns 69h 17 Minimum Write Recovery Time (tWRmin) 15ns 78h 18 Minimum RAS# to CAS# Delay Time (tRCDmin) 13.125ns 69h 19 Minimum Row Active to Row Active Delay Time (tRRDmin) 6ns 30h 20 Minimum Row Precharge Time (tRPmin) 13.125ns 69h 21 Upper Nibbles for tRAS and tRC 22 Minimum Active to Precharge Time (tRASmin), Least Significant Byte 23 Minimum Active to Active/Refresh Time (tRCmin), Least Significatn Byte 24 - 11h 35ns 18h 48.125ns 81h Minimum Refresh Recovery Time (tRFCmin), Least Significant Byte 260ns 20h 25 Minimum Refresh Recovery Time (tRFCmin), Most Significant Byte 260ns 08h 26 Minimum Internal Write to Read Command Delay Time (tWTRmin) 7.5ns 3Ch 27 Minimum Internal Read to Precharge Command Delay Time (tRTPmin) 7.5ns 3Ch 28 Upper Nibble for tFAW 30ns 00h 29 Minimum Four Activate WIndow Delay Time (tFAWmin), Least Significant Byte 30 SDRAM Output Drivers supported 31 SDRAM Thermal and Refresh Options 32 Module Thermal Sensor 33 SDRAM Device Type 34 Fine Offset for SDRAM Minimum Cycle Time(tCKmin) 35 Fine Offset for Minimum CAS Latency Time(tAAmin) 36 Fine Offset for Minimum RAS# to CAS# Delay Time(tRCDmin) 13.125ns 00h 37 Fine Offset for Minimum Row Precharge Delay Time(tRPmin) 13.125ns 00h 38 Fine Offset for Minimum Active to Active/Refresh Delay Time(tRCmin) 48.125ns 00h 30ns F0h DLL off Mode, RZQ/6, RZQ/7 83h No ODTS, No ASR 01h with TS 80h Non-Standard Device 80h 1.25ns 00h 13.125ns 00h AUG. 2013 SERIAL PRESENCE DETECT Byte # 39~40 41 42~59 Function Supported Hex Value YK002 YK002 Function Described Note Reserved, General Section SDRAM Maximum Activate Count (MAC) Value Reserved 00h Unlimited MAC_pTRR Complian t 88h Reserved, General Section Reserved 00h 60 Module Nominal Height 18.75mm 04h 61 Module Maximum Thickness 62 Reference Raw Card Used 63 DDP Double sides(With Flat Type H/S) 33h R/C N, 1.0 2Ch DIMM Module Attributes 2 Rows of DRAM / 1 Register used 09h 64 Heat Spreader Solution with HS 80h 65 Register vendor ID code(LSB) IDT 80h 66 Register vendor ID code(MSB) IDT B3h 67 Register Revision Number IDT Alpine 64h 68 Register Type SSTE32882 00h 69 Register Control Word Functions(RC0/RC1) Default 00h 70 Register Control Word Functions(RC2/RC3) R/C N A0h 71 Register Control Word Functions(RC4/RC5) R/C N 55h 72 Register Control Word Functions(RC6/RC7) Default 00h 73 Register Control Word Functions(RC8/RC9) Default 00h 74 Register Control Word Function(RC10, RC11) Default 00h 75 Register Control Word Function(RC12, RC13) Default 00h 76 Register Control Word Function(RC14, RC15) Default 00h - 00h 77~116 Reserved 117 Module Manufacturer ID Code, Least Significant Byte Samsung 80h 118 Module Manufacturer ID Code, Most Significant Byte Samsung CEh 119 Module ID: Module Manufacturing Location Onyang Korea 01h 120 Module ID: Module Manufacturing Date - 00h 121 Module ID: Module Manufacturing Date - 00h - 00h 122~125 Module ID : Module Serial Number 126 Cyclical Redundancy Code - 16h 127 Cyclical Redundancy Code - DDh 128 Module Part Number M 4Dh 129 Module Part Number 3 33h 130 Module Part Number 9 39h 131 Module Part Number 2 32h 132 Module Part Number B 42h 133 Module Part Number 2 32h 134 Module Part Number G 47h 135 Module Part Number 7 37h 136 Module Part Number 0 30h 137 Module Part Number D-die 44h 138 Module Part Number M 4Dh 139 Module Part Number 0 30h 140 Module Part Number - 2Dh 141 Module Part Number Y 59h 142 Module Part Number K 4Bh 143 Module Part Number 0 30h 144 Module Part Number Blank 20h AUG. 2013 SERIAL PRESENCE DETECT Byte # 145 Function Supported Hex Value YK002 YK002 Blank 20h - 00h Function Described Note Module Part Number 146~147 Module Revision Code 148 SDRAM Manufacturer's JEDEC ID Code Samsung 80h 149 SDRAM Manufacturer's JEDEC ID Code Samsung CEh 150~175 Manufacturer's Specific Data - 00h 176~255 Open for customer use - 00h Note : 1. ### #####. 2. ### #####. 3. ### #####. AUG. 2013