Contents Features................................................................................................... 1 Applications.............................................................................................. 1 Package Name ........................................................................................ 1 Block Diagram.......................................................................................... 2 The meaning of product model number ................................................... 3 Selection Guide........................................................................................ 3 Pin Assignment ........................................................................................ 4 Absolute Maximum Ratings...................................................................... 4 Electrical Characteristics (1)..................................................................... 5 Electrical Characteristics (2) .................................................................... 6 Electrical Characteristics (3)..................................................................... 7 Electrical Characteristics (4)..................................................................... 7 Measurement Circuits .............................................................................. 8 Description of Operation ........................................................................ 10 Operation Timing Chart.......................................................................... 16 Battery Protection IC Connection Example ............................................ 19 Precautions ............................................................................................ 20 Characteristic (typical characteristic)...................................................... 21 Dimensions ............................................................................................ 24 Rev.3.2 BATTERY PROTECTION IC (FOR A SINGLE-CELL PACK) S-8241 Series The S-8241 is a series of lithium-ion/lithium polymer rechargeable battery protection ICs incorporating high-accuracy voltage detection circuits and delay circuits. These ICs are suitable for protection of single-cell lithium ion/lithium polymer battery packs from overcharge, overdischarge and overcurrent. !"Features (1) Internal high-accuracy voltage detection circuit !" Overcharge detection voltage 3.9 V to 4.4 V !" Overcharge release voltage 3.8 V to 4.4 V (*1) (5 mV-step) Accuracy of 25 mV(+25#C) or 30 mV(-5#C to +55#C) Accuracy of 50 mV *1: Overcharge release voltage = Overcharge detection voltage - Overcharge hysteresis The overcharge hysteresis can be selected in the range 0.0, or 0.1 to 0.4 V in 50mV steps. (However, selection "Overcharge release voltage<3.8 V" is impossible.) !" !" Overdischarge detection voltage Overdischarge release voltage 2.0 V to 3.0 V (100 mV-step) Accuracy of 80 mV 2.0 V to 3.4 V (*2) Accuracy of 100 mV *2: Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis The overdischarge hysteresis can be selected in the range 0.0 to 0.7 V in 100mV steps. (However, selection "Overdischarge release voltage$3.4 V" is impossible.) (2) !" Overcurrent 1 detection voltage 0.05 V to 0.3 V (5 mV-step) Accuracy of 20 mV !" Overcurrent 2 detection voltage 0. 5 V (fixed) Accuracy of 100 mV A high voltage withstand device is used for charger connection pins (VM and CO pins: Absolute maximum rating = 26 V) (3) Delay times (overcharge: tCU; overdischarge: tDL; overcurrent 1: tlOV1; overcurrent 2: tlOV2) are generated by an internal circuit. (External capacitors are unnecessary.) Accuracy of 30 % (4) Internal three-step overcurrent detection circuit (overcurrent 1, overcurrent 2, and load short-circuiting) (5) Either the 0V battery charging function or 0V battery charge inhibiting function can be selected. (6) Versions with and without a power-down feature can be selected. (7) Charger detection function and abnormal charge current detection function !" (8) The overdischarge hysteresis is released by detecting a negative VM pin voltage (typ. -1.3 V). (Charger detection function) !" If the output voltage at DO pin is high and the VM pin voltage becomes equal to or lower than the charger detection voltage (typ. -1.3 V), the output voltage at CO pin goes low. (Abnormal charge current detection function) Low current consumption (9) !" Operation 3.0 %A typ. !" Power-down mode 0.1 %A max. Wide operating temperature range: (10) Small package 5.0 %A max. -40 to +85 #C SOT-23-5 (5-pin), SON-5 (5-pin) ! Package Name ! Applications !" Lithium-ion rechargeable battery packs ! SOT-23-5 (5-pin) (PKG drawing code : MP005-A) !" Lithium- polymer rechargeable battery packs ! SON-5 (5-pin) (PKG drawing code : PN005-A) Seiko Instruments Inc. 1 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series Rev.3.2 ! Block Diagram Delay circuit Clock generation circuit VDD DO Counter circuit Load shortcircuiting detection circuit & + 0V battery/charging circuit RCOL '/charge inhibition circuit Overdischarge detection comparator RVMD + + & Charger detection circuit The overdischarge hysterisis is released when a charger is detected. VSS & Overcurrent 1 detection comparator + & Overcurrent 2 detection comparator Note: The diode in the IC is a parasitic diode. "Figure 1 Block Diagram 2 CO Level conversion circuit Overcharge detection comparator Seiko Instruments Inc. VM RVMS Rev.3.2 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series !"The meaning of product model number (##-product ()-reel orientation (T2 or TF) Model number: S-8241AB( abbreviation (GB( ## Symbol Meaning Description ( Serial number Is set from A to Z in sequence. ## Package form MC:SOT-23-5, PN:SON-5 !"Selection Guide Model No./Item Overcharge detection voltage Overcharge release voltage Overdischarge detection voltage Overdischarge release voltage Overcurrent 1 detection voltage 0V battery charging function Delay time combination* Power down feature S-8241ABAMC-GBA-T2 4.275 V 4.075 V 2.3 V 2.9 V 0.100 V unavailable (1) Available S-8241ABCMC-GBC-T2 4.350 V 4.100 V 2.3 V 2.8 V 0.075 V unavailable (1) Available S-8241ABDMC-GBD-T2 4.275 V 4.175 V 2.3 V 2.4 V 0.100 V available (1) Available S-8241ABEMC-GBE-T2 4.295 V 4.095 V 2.3 V 3.0 V 0.200 V unavailable (1) Available S-8241ABFMC-GBF-T2 4.325 V 4.075 V 2.5 V 2.9 V 0.100 V unavailable (1) Available S-8241ABGMC-GBG-T2 4.200 V 4.100 V 2.3 V 3.0 V 0.100 V unavailable (1) Available S-8241ABHMC-GBH-T2 4.325 V 4.125 V 2.3 V 2.3 V 0.100 V available (1) Available S-8241ABIMC-GBI-T2 4.280 V 4.080 V 2.3 V 2.3 V 0.160 V unavailable (1) Available S-8241ABKMC-GBK-T2 4.325 V 4.075 V 2.5 V 2.9 V 0.150 V unavailable (1) Available S-8241ABLMC-GBL-T2 4.320 V 4.070 V 2.5 V 2.9 V 0.100 V unavailable (1) Available S-8241ABNPN-KBN-TF 4.350V 4.050V 2.35V 2.65V 0.150V available (1) Available S-8241ABOMC-GBO-T2 4.350V 4.15V 2.3V 3.0V 0.150V available (2) Available S-8241ABPMC-GBP-T2 4.350V 4.15V 2.3V 3.0V 0.200 V available (2) Available S-8241ABDPN-KBD-TF *The delay time combination (1), (2) is as follows. Overdischarge Delay time Overcharge detection combination detection delay time delay time Overcurrent 1 detection delay time (1) 1.0 s 125 ms 8 ms (2) 0.125s 31ms 16ms It is possible to change the detection voltage for products other than those listed above. Also, delay time can be changed within the following range. For details, please contact our sales office. Delay time Symbol Optional range Remarks Overcharge detection delay time tCU 0.25 s 0.5 s 1.0 s Choose from the list at left. Overdischarge detection delay time tDL 31 ms 62.5 ms 125 ms Choose from the list at left. Overcurrent 1 detection delay time tlOV1 4 ms 8 ms 16 ms Choose from the list at left. * Boxes in bold line indicate standard products. Seiko Instruments Inc. 3 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series Rev.3.2 !"Pin Assignment For details of package, refer to the attached drawing. 5 4 SOT-23-5 Top view 1 2 3 Figure 2 5 4 SON-5 Top view 1 2 3 Pin No. Symbol Description 1 VM Voltage detection pin between VM and VSS (Overcurrent detection pin) 2 VDD Positive power input pin 3 VSS Negative power input pin 4 DO FET gate connection pin for discharge control (CMOS output) 5 CO FET gate connection pin for charge control (CMOS output) Pin No. Symbol Description 1 VM Voltage detection pin between VM and VSS (Overcurrent detection pin) 2 VDD 3 CO FET gate connection pin for charge control (CMOS output) 4 DO FET gate connection pin for discharge control (CMOS output) 5 VSS Negative power input pin Figure 3 Positive power input pin !"Absolute Maximum Ratings (Ta = 25#C unless otherwise specified) Item Symbol Applicable pin Rating Unit Input voltage between VDD and VSS * VDS VDD VSS -0.3 to VSS +12 V VM Input pin voltage VVM VM VDD -26 to VDD +0.3 V CO output pin voltage VCO CO VM -0.3 to VDD +0.3 V DO output pin voltage VDO DO VSS -0.3 to VDD +0.3 V Power dissipation PD 250 SON-5 150 mW Operating temperature range Topr -40 to +85 #C Storage temperature range Tstg -40 to +125 #C Note: This IC contains a circuit that protects it from static discharge, but take special care that no excessive static electricity or voltage which exceeds the limit of the protection circuit is applied to the IC. * 4 SOT-23-5 Pulse (%sec) noise exceeding the above input voltage (VSS + 12 V) may cause damage to the IC. Seiko Instruments Inc. Rev.3.2 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series !"Electrical Characteristics (1) Other than detection delay time (25##C) Item Symbol (Ta = 25#C unless otherwise specified) Measurement conditions Remarks Min. Typ. Max. & VCU -0.025 VCU VCU +0.025 Ta= -5#C to 55#C(*1) VCU -0.030 VCU VCU +0.030 When VCL ) VCU VCL -0.050 VCL VCL +0.050 When VCL = VCU VCL -0.025 VCL VCL +0.025 & VDL -0.080 VDL VDL +0.080 When VDU ) VDL VDU -0.100 VDU VDU +0.100 When VDU = VDL VDU -0.080 VDU VDU +0.080 & VIOV1 -0.020 VIOV1 VIOV1 +0.020 Unit Measurement circuit V 1 V 1 V 1 V 1 V 1 DETECTION VOLTAGE Overcharge detection voltage VCU=3.9 to 4.4 V 5mV Step VCU 1 Overcharge release voltage VCU&VCL=0 to 0.4 V 50mV Step VCL 1 Overdischarge detection voltage VDL=2.0 to 3.0 V 100mV Step VDL 1 Overdischarge release voltage VDU&VDL=0 to 0.7 V 100mV Step Overcurrent 1 detection voltage VIOV1=0.05 to 0.3V 5mV Step VDU VIOV1 1 2 Overcurrent 2 detection voltage VIOV2 2 & 0.4 0.5 0.6 V 1 Load short-circuiting detection voltage VSHORT 2 VM voltage based on VDD -1.7 -1.3 -0.9 V 1 & -2.0 -1.3 -0.6 V 1 0 0.5 mV/#C & Charger detection voltage VCHA 3 Overcharge detection voltage temperature factor(*1) TCOE1 & Ta= -5#C to 55#C -0.5 Overcurrent 1 detection voltage temperature factor(*1) TCOE2 & Ta= -5#C to 55#C -0.1 0 0.1 mV/#C & INPUT VOLTAGE, OPERATING VOLTAGE Input voltage between VDD and VSS VDS1 & absolute maximum rating -0.3 & 12 V & Input voltage between VDD and VM VDS2 & absolute maximum rating -0.3 & 26 V & 1.5 & 8 V & Operating voltage between VDD and VSS VDSOP1 & Internal circuit operating voltage Operating voltage between VDD and VM VDSOP2 & Internal circuit operating voltage 1.5 & 24 V & CURRENT CONSUMPTION Power-down feature available Current consumption during normal operation I OPE 4 VDD=3.5V, VM=0V 1.0 3.0 5.0 %A 1 Current consumption at power down I PDN 4 VDD=VM =1.5V & & 0.1 %A 1 CURRENT CONSUMPTION Power-down feature unavailable Current consumption during normal operation I OPE 4 VDD=3.5V, VM=0V 1.0 3.0 5.0 %A 1 Overdischarge current consumption I OPED 4 VDD=VM =1.5V 1.0 2.0 3.5 %A 1 OUTPUT RESISTANCE CO pin H resistance RCOH 6 CO=3.0V,VDD=3.5V,VM=0V 0.1 2 10 k* 1 CO pin L resistance RCOL 6 CO=0.5V,VDD=4.5V,VM=0V 150 600 2400 k* 1 DO pin H resistance RDOH 7 DO=3.0V,VDD=3.5V,VM=0V 0.1 1.3 6.0 k* 1 DO pin L resistance RDOL 7 DO=0.5V,VDD=VM=1.8V 0.1 0.5 2.0 k* 1 Internal resistance between VM and VDD RVMD 5 VDD=1.8V, VM =0V 100 300 900 k* 1 Internal resistance between VM and VSS RVMS 5 VDD=VM =3.5V 50 100 150 k* 1 VM INTERNAL RESISTANCE 0V BATTERY CHARGING FUNCTION The 0 V battery function is either "0 V battery charging function" or "0 V battery charge inhibiting function" depending upon the product type. 0V battery charge starting charger voltage V0CHA 10 0V batt. cha. Available 0.0 0.8 1.5 V 1 0V battery charge inhibiting battery voltage V0INH 11 0V batt. cha. Unavailable 0.6 0.9 1.2 V 1 (*1) : Since products are not screened by high and low temperatures, the specification for this temperature range is guaranteed by design, not production tested. Seiko Instruments Inc. 5 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series Rev.3.2 !"Electrical Characteristics (2) Other than detection delay time (-40 to 85##C*1) 1 Item Symbol Measurement conditions VCU 1 (Ta = (-40 to 85#C* )unless otherwise specified) Remarks Min. Typ. Max. Unit Measurement circuit & VCU -0.055 VCU VCU +0.040 V 1 When VCL ) VCU VCL -0.095 VCL VCL +0.060 When VCL = VCU VCL -0.055 VCL VCL +0.040 V 1 & VDL -0.120 VDL VDL +0.120 V 1 When VDU ) VDL VDU -0.140 VDU VDU +0.140 VDU -0.120 1 VDU VDU +0.120 V When VDU = VDL & VIOV1 -0.026 VIOV1 VIOV1 +0.026 V 1 DETECTION VOLTAGE Overcharge detection voltage VCU=3.9 to 4.4 V 5mV Step Overcharge release voltage VCU&VCL=0 to 0.4 V 50mV Step VCL 1 Overdischarge detection voltage VDL=2.0 to 3.0 V 100mV Step VDL 1 Overdischarge release voltage VDU&VDL=0 to 0.7 V 100mV Step Overcurrent 1 detection voltage VIOV1=0.05 to 0.3V 5mV Step VDU VIOV1 1 2 Overcurrent 2 detection voltage VIOV2 2 & 0.37 0.5 0.63 V 1 Load short-circuiting detection voltage VSHORT 2 VM voltage based on VDD -1.9 -1.3 -0.7 V 1 Charger detection voltage VCHA 3 & -2.2 -1.3 -0.4 V 1 Overcharge detection voltage temperature factor(*1) TCOE1 & Ta= -40#C to 85#C -0.7 0 0.7 mV/#C & Overcurrent 1 detection voltage temperature factor(*1) TCOE2 & Ta= -40#C to 85#C -0.2 0 0.2 mV/#C & INPUT VOLTAGE, OPERATING VOLTAGE Input voltage between VDD and VSS VDS1 & absolute maximum rating -0.3 & 12 V & Input voltage between VDD and VM VDS2 & absolute maximum rating -0.3 & 26 V & 1.5 & 8 V & Operating voltage between VDD and VSS VDSOP1 & Internal circuit operating voltage Operating voltage between VDD and VM VDSOP2 & Internal circuit operating voltage 1.5 & 24 V & CURRENT CONSUMPTION Power-down feature available Current consumption during normal operation I OPE 4 VDD=3.5V, VM=0V 0.7 3.0 6.0 %A 1 Current consumption at power down I PDN 4 VDD=VM =1.5V & & 0.1 %A 1 CURRENT CONSUMPTION Power-down feature unavailable Current consumption during normal operation I OPE 4 VDD=3.5V, VM=0V 0.7 3.0 6.0 %A 1 Overdischarge current consumption I OPED 4 VDD=VM =1.5V 0.6 2.0 4.5 %A 1 OUTPUT RESISTANCE CO pin H resistance RCOH 6 CO=3.0V,VDD=3.5V,VM=0V 0.07 2 13 k* 1 CO pin L resistance RCOL 6 CO=0.5V,VDD=4.5V,VM=0V 100 600 3500 k* 1 DO pin H resistance RDOH 7 DO=3.0V,VDD=3.5V,VM=0V 0.07 1.3 7.3 k* 1 DO pin L resistance RDOL 7 DO=0.5V,VDD=VM=1.8V 0.07 0.5 2.5 k* 1 Internal resistance between VM and VDD RVMD 5 VDD=1.8V, VM =0V 78 300 1310 k* 1 Internal resistance between VM and VSS RVMS 5 VDD=VM =3.5V 39 100 220 k* 1 VM INTERNAL RESISTANCE 0V BATTERY CHARGING FUNCTION The 0 V battery function is either "0 V battery charging function" or "0 V battery charge inhibiting function" depending upon the product type. 0V battery charge starting charger voltage V0CHA 10 0V batt. cha. Available 0.0 0.8 1.7 V 1 0V battery charge inhibiting battery voltage V0INH 11 0V batt. cha. Unavailable 0.4 0.9 1.4 V 1 (*1) : Since products are not screened by high and low temperatures, the specification for this temperature range is guaranteed by design, not production tested. 6 Seiko Instruments Inc. Rev.3.2 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series !"Electrical Characteristics (3) Detection delay time (25##C) Item Symbol (Ta = 25#C unless otherwise specified) Measurement conditions Remarks Min. Typ. Max. Unit Measurement circuit DELAY TIME Overcharge detection delay time tCU 8 & 0.7 1.0 1.3 s 1 Overdischarge detection delay time tDL 8 & 87.5 125 162.5 ms 1 Overcurrent 1 detection delay time tlOV1 9 & 5.6 8 10.4 ms 1 Overcurrent 2 detection delay time tlOV2 9 & 1.4 2 2.6 ms 1 tSHORT 9 & & 10 50 %s 1 Load short-circuiting detection delay time 1 !"Electrical Characteristics (4) Detection delay time (-40 to 85##C* ) 1 Item (Ta = -40 to 85#C * unless otherwise specified) Symbol Measurement conditions Remarks Min. Typ. Max. Unit Measurement circuit tCU 8 & 0.55 1.0 1.7 s 1 8 & 69 125 212 ms 1 9 & 4.4 8 14 ms 1 tIOV2 9 & 1.1 2 3.4 ms 1 tSHORT 9 & & 10 73 %s 1 DELAY TIME Overcharge detection delay time Overdischarge detection delay time Overcurrent 1 detection delay time Overcurrent 2 detection delay time Load short-circuiting detection delay time tDL tIOV1 (*1) : Since products are not screened by high and low temperatures, the specification for this temperature range is guaranteed by design, not production tested. Seiko Instruments Inc. 7 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series Rev.3.2 !"Measurement Circuits Unless otherwise specified, the output voltage levels "H" and "L" at CO and DO pins are judged by the threshold voltage (1.0 V) of a Nch FET. Judge the CO pin level with respect to VM and the DO pin level with respect to VSS. (1) Measurement Condition 1, Measurement Circuit 1 ++ Overcharge detection voltage, Overcharge release voltage, Overdischarge detection voltage, Overdischarge release voltage,, Set V1=3.5V and V2=0V under normal condition. Increase V1 from 3.5 V gradually. The voltage between VDD and VSS when CO='L' is the overcharge detection voltage (VCU). Decrease V1 gradually. The voltage between VDD and VSS when CO='H' is the overcharge release voltage (VCL). Further decrease V1 gradually. The voltage between VDD and VSS when DO='L' is the overdischarge detection voltage (VDL). Increase V1 gradually. The voltage between VDD and VSS when DO='H' is the overdischarge release voltage (VDU). (2) Measurement Condition 2, Measurement Circuit 1 ++ Overcurrent 1 detection voltage, Overcurrent 1 release voltage, Overcurrent 2 detection voltage, Load short-circuiting detection voltage ,, Set V1=3.5V and V2=0V under normal condition. Increase V2 from 0 V gradually. The voltage between VM and VSS when DO='L' is the overcurrent 1 detection voltage (VIOV1). Set V1=3.5V and V2=0V under normal condition. Increase V2 from 0 V at a rate of 1 ms to 4 ms. The voltage between VM and VSS when DO='L' is the overcurrent 2 detection voltage (VIOV2). Set V1=3.5V and V2=0V under normal condition. Increase V2 from 0 V at a rate of 1 %s to 50 %s. The voltage between VM and VDD when DO='L' is the load short-circuiting detection voltage (VSHORT). (3) Measurement Condition 3, Measurement Circuit 1 ++ Charger detection voltage, (=abnormal charge current detection voltage) ,, !" For products with overdischarge hysteresis only Set V1=1.8V and V2=0V under overdischarge condition. Increase V1 gradually, set V1=(VDU+VDL)/2 (within overdischarge hysteresis, overdischarge condition), then decrease V2 from 0 V gradually. The voltage between VM and VSS when DO='H' is the charger detection voltage (VCHA). Set V1=3.5V and V2=0V under normal condition. Decrease V2 from 0 V gradually. The voltage between VM and VSS when CO='L' is the abnormal charge current detection voltage. The abnormal charge current detection voltage has the same value as the charger detection voltage (VCHA) . (4) Measurement Condition 4, Measurement Circuit 1 ++ Normal operation current consumption, Power-down current consumption, Overdischarge current consumption ,, Set V1=3.5V and V2=0V under normal condition. The current IDD flowing through VDD pin is the normal operation consumption current (IOPE). For products with power-down feature Set V1=V2=1.5V under overdischarge condition. The current IDD flowing through VDD pin is the power-down current consumption (IPDN). For products without power-down feature Set V1=V2=1.5V under overdischarge condition. The current IDD flowing through VDD pin is the overdischarge current consumption (IOPED). 8 Seiko Instruments Inc. Rev.3.2 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series (5) Measurement Condition 5, Measurement Circuit 1 ++ Internal resistance between VM and VDD, Internal resistance between VM and VSS ,, Set V1=1.8V and V2=0V under overdischarge condition. Measure current IVM flowing through VM pin. 1.8V/|IVM| is the internal resistance (RVMD) between VM and VDD. Set V1=V2=3.5V under overcurrent condition. Measure current IVM flowing through VM pin. 3.5V/|IVM| is the internal resistance (RVMS) between VM and VSS. (6) Measurement Condition 6, Measurement Circuit 1 ++ CO pin H resistance, CO pin L resistance ,, Set V1=3.5V, V2=0V and V3=3.0V under normal condition. Measure current ICO flowing through CO pin. 0.5V/|ICO| is the CO pin H resistance (RCOH). Set V1=4.5V, V2=0V and V3=0.5V under overcharge condition. Measure current ICO flowing through CO pin. 0.5V/|ICO| is the CO pin L resistance (RCOL). (7) Measurement Condition 7, Measurement Circuit 1 ++ DO pin H resistance, DO pin L resistance ,, Set V1=3.5V, V2=0V and V4=3.0V under normal condition. Measure current IDO flowing through DO pin. 0.5V/|IDO| is the DO pin H resistance (RDOH). Set V1=1.8V, V2=0V and V4=0.5V under overdischarge condition. Measure current IDO flowing through DO pin. 0.5V/|IDO| is the DO pin L resistance (RDOL). (8) Measurement Condition 8, Measurement Circuit 1 ++ Overcharge detection delay time, Overdischarge detection delay time ,, Set V1=3.5V and V2=0V under normal condition. Increase V1 gradually to overcharge detection voltage (VCU) - 0.2 V and increase V1 to the overcharge detection voltage (VCU) + 0.2 V momentarily (within 10 %s). The time after V1 becomes the overcharge detection voltage until CO goes "L" is the overcharge detection delay time (tCU). Set V1=3.5V and V2=0V under normal condition. Decrease V1 gradually to overdischarge detection voltage (VDL) + 0.2 V and decrease V1 to the overdischarge detection voltage (VDL) - 0.2 V momentarily (within 10 %s). The time after V1 becomes the overdischarge detection voltage (VDL) until DO goes "L" is the overdischarge detection delay time (tDL). (9) Measurement Condition 9, Measurement Circuit 1 ++ Overcurrent 1 detection delay time, Overcurrent 2 detection delay time, Load short-circuiting detection delay time, Abnormal charge current detection delay time ,, Set V1=3.5V and V2=0V under normal condition. Increase V2 from 0 V to 0.35 V momentarily (within 10 %s). The time after V2 becomes overcurrent 1 detection voltage (VIOV1) until DO goes "L" is overcurrent 1 detection delay time (tIOV1). Set V1=3.5V and V2=0V under normal condition. Increase V2 from 0 V to 0.7 V momentarily (within 1 %s). The time after V2 becomes overcurrent 1 detection voltage (VIOV1) until DO goes "L" is overcurrent 2 detection delay time (tIOV2). Note! , Overcurrent 2 detection delay time begins when overcurrent 1 is detected. (Because the delay circuit is shared.) Set V1=3.5V and V2=0V under normal condition. Increase V2 from 0 V to 3.0 V momentarily (within 1 %s). The time after V2 becomes the load short-circuiting detection voltage (VSHORT) until DO goes "L" is the load short-circuiting detection delay time (tSHORT). Set V1=3.5V and V2=0V under normal condition. Decrease V2 from 0 V to -2.5 V momentarily (within Seiko Instruments Inc. 9 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series Rev.3.2 10 %s). The time after V2 becomes the charger detection voltage (VCHA) until CO goes "L" is the abnormal charge current detection delay time. The abnormal charge current detection delay time has the same value as the overcharge detection delay time. (10) Measurement Condition 10, Measurement Circuit 1 (Product with 0V battery charging function) ++ 0V battery charge start charger voltage ,, Set V1=V2=0V and decrease V2 gradually. The voltage between VDD and VM when CO='H' (VM + 0.1 V or higher) is the 0V battery charge start charger voltage (V0CHA). (11) Measurement Condition 11, Measurement Circuit 1 (Product with 0V battery charge inhibiting function) ++ 0V battery charge inhibiting battery voltage ,, Set V1=0V and V2=-4V. Increase V1 gradually. The voltage between VDD and VSS when CO='H' (VM + 0.1 V or higher) is the 0V battery charge inhibiting battery voltage (V0INH). IDD VDD A S-8241 series V1 VSS VM A IVM CO DO V2 IDO A V4 V VDO VCO V A ICO V3 COM Measurement circuit 1 Figure 4 !"Description of Operation Normal condition This IC monitors the voltage of the battery connected to VDD and VSS pins and the differences in voltages between VM and VSS pins to control charging and discharging. If the battery voltage is in the range from the overdischarge detection voltage (VDL) to the overcharge detection voltage (VCU), and the VM pin voltage is in the range from the charger detection voltage (VCHA) to the overcurrent 1 detection voltage (VIOV1) (the current flowing through the battery is equal to or lower than a specified value), both the charging and discharging control FETs turn on. In this condition, charging and discharging can be carried out freely. This condition is called the normal condition. Overcurrent condition If the discharging current becomes equal to or higher than a specified value (the VM pin voltage is equal to or higher than the overcurrent detection voltage) during discharging under normal condition and it continues for the overcurrent detection delay time or longer, the discharging control FET turns off to stop discharging. This condition is called an overcurrent condition. (The overcurrent means overcurrent 1, overcurrent 2, or load short-circuiting.) 10 Seiko Instruments Inc. Rev.3.2 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series The VM and VSS pins are shorted by the RVMS resistor in the IC under the overcurrent condition. When a load is connected, the VM pin voltage equals the VDD potential due to the load. The overcurrent condition returns to the normal condition when the load is released and the impedance between the EB+ and EB- pins (see Figure 9 for a connection example) is the automatic recoverable load resistance (see the equation [1] below) or higher. When the load is removed, the VM pin, which and the VSS pin are shorted with the RVMS resistor, goes back to the VSS potential. The IC detects that the VM pin potential returns to overcurrent 1 detection voltage (VIOV1) or lower and returns to the normal condition. Automatic recoverable load resistance = {Battery voltage / (Minimum value of overcurrent 1 detection voltage) - 1} x (RVMS maximum value) --- [1] Example: Battery voltage = 3.5 V and overcurrent 1 detection voltage (VIOV1) = 0.1 V Automatic recoverable load resistance = (3.5 V / 0.07 V -1) x 200k* = 9.8M* *Note: The automatic recoverable load resistance is different with the battery voltage and overcurrent 1 detection voltage settings. To enable automatic recovery from over current, check the overcurrent 1 detection voltage setting for the IC to be used, and determine the minimum value of the open load using the above equation [1]. Overcharge condition If the battery voltage becomes higher than the overcharge detection voltage (VCU) during charging under normal condition and it continues for the overcharge detection delay time (tCU) or longer, the charging control FET turns off to stop charging. This condition is called an overcharge condition. The overcharge condition is released in two cases ($ and %) for each of the products with and without overcharge hysteresis: -" Products with overcharge hysteresis (overcharge detection voltage (VCU) > overcharge release voltage (VCL)) $ If the battery voltage falls below the overcharge release voltage (VCL), the charging control FET turns on and the normal condition returns. % If a load is installed and discharging starts, the charging control FET turns on and the normal condition returns. The release mechanism is as follows: the discharge current flows through an internal parasitic diode of the charging FET immediately after a load is installed and discharging starts, and the VM pin voltage increases by about 0.7 V (Vf voltage of the diode) from the VSS pin voltage momentarily. The IC detects this voltage (overcurrent 1 detection voltage or higher) and releases the overcharge condition. Consequently, if the battery voltage is equal to or lower than the overcharge detection voltage (VCU), the normal condition returns immediately. If the battery voltage is higher than the overcharge detection voltage (VCU), the normal condition does not return until the battery voltage falls below the overcharge detection voltage (VCU) even if a load is installed. If the VM pin voltage is equal to or lower than the overcurrent 1 detection voltage when a load is installed and discharging starts, the normal condition does not return. !Note: If the battery is charged to a voltage higher than the overcharge detection voltage (VCU) and the battery voltage does not fall below the overcharge detection voltage (VCU) even when a heavy load (which causes an overcurrent) is installed, detection/delay of overcurrent 1 and overcurrent 2 do not work until the battery voltage falls below the overcharge detection voltage (VCU). However, an actual battery has an internal impedance of several dozens of m*, and the battery voltage drops immediately after a heavy load which causes an overcurrent is installed, and therefore, detection/delay of overcurrent 1 and overcurrent 2 work. Detection/delay of load short-circuiting work regardless of the battery voltage. Seiko Instruments Inc. 11 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series Rev.3.2 -" Products without overcharge hysteresis (Overcharge detection voltage (VCU) = Overcharge release voltage (VCL)) $ If the battery voltage falls below the overcharge release voltage (VCL), the charging control FET turns on and the normal condition returns. % If a load is installed and discharging starts, the charging control FET turns on and the normal condition returns. The release mechanism is as follows: the discharge current flows through an internal parasitic diode of the charging FET immediately after a load is installed and discharging starts, and the VM pin voltage increases by about 0.7 V (Vf voltage of the diode) from the VSS pin voltage momentarily. The IC detects this voltage (overcurrent 1 detection voltage or higher), increases the overcharge detection voltage by about 50 mV, and releases the overcharge condition. Consequently, if the battery voltage is equal to or lower than the overcharge detection voltage (VCU) + 50 mV, the normal condition returns immediately. If the battery voltage is higher than the overcharge detection voltage (VCU) + 50 mV, the normal condition does not return until the battery voltage falls below the overcharge detection voltage (VCU) + 50 mV even if a load is installed. If the VM pin voltage is equal to or lower than the overcurrent 1 detection voltage when a load is installed and discharging starts, the normal condition does not return. !Note: If the battery is charged to a voltage higher than the overcharge detection voltage (VCU) and the battery voltage does not fall below the overcharge detection voltage (VCU) + 50 mV even when a heavy load (which causes an overcurrent) is installed, detection/delay of overcurrent 1 and overcurrent 2 do not work until the battery voltage falls below the overcharge detection voltage (VCU) + 50 mV. However, an actual battery has an internal impedance of several dozens of m*, and the battery voltage drops immediately after a heavy load which causes an overcurrent is installed, and therefore, detection/delay of overcurrent 1 and overcurrent 2 work. Detection/delay of load short-circuiting work regardless of the battery voltage. Overdischarge condition (for products with power-down feature) If the battery voltage falls below the overdischarge detection voltage (VDL) during discharging under normal condition and it continues for the overdischarge detection delay time (tDL) or longer, the discharging control FET turns off and discharging stops. This condition is called the overdischarge condition. When the discharging control FET turns off, the VM pin is pulled up by the RVMD resistor between VM and VDD in the IC. If the potential difference between VM and VDD falls below 1.3 V (typ.) (load short-circuiting detection voltage), the IC's current consumption is reduced to the power-down current consumption (IPDN). This condition is called the power-down condition. The VM and VDD pins are shorted by the RVMD resistor in the IC under the overdischarge and power-down conditions. The power-down condition is released when the charger is connected and the potential difference between VM and VDD becomes 1.3 V (typ.) or higher (load short-circuiting detection voltage). At this time, the FET is still off. When the battery voltage becomes the overdischarge detection voltage (VDL) or higher (see note), FET turns on and the overdischarge condition changes to the normal condition. Note: If the VM pin voltage has not reached the charger detection voltage (VCHA), when an overdischarged battery is connected to the charger, the overdischarge condition is released (discharge control FET turns on) as designed, when the battery voltage reaches the overdischarge release voltage (VDU) or higher. Overdischarge condition (for products without power-down feature) If the battery voltage falls below the overdischarge detection voltage (VDL) during discharging under normal conditions and this condition continues for the overdischarge detection delay time (tDL) or longer, the discharging control FET turns off and discharging stops. When the discharging control FET turns off, the VM pin is pulled up by the RVMD resistor between VM and VDD in the IC. If the potential difference between VM and VDD falls below 1.3 V (typ.) (load short-circuiting detection voltage), the IC's current consumption is reduced to the overdischarge current consumption (IOPED). This condition is called the overdischarge condition. The VM and VDD pins are shorted by the RVMD resistor in the IC under the overdischarge condition. If the charger is connected, the overdischarge condition is released in the same way as explained 12 Seiko Instruments Inc. Rev.3.2 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series above in respect to products having the power-down feature. For products without the power-down feature, however, since the VM pin is pulled down by the RVMS resistor between VM and VSS in the IC when the battery voltage reaches the overdischarge release voltage (VDU) or higher even if the charger is not connected, the discharge control FET turns on when the potential difference between VM and VSS falls below the overcurrent 1 detection voltage (VIOV1) if the load is cut off, and the overdischarge condition changes to the normal condition. Charger detection If the VM pin voltage is lower than the charger detection voltage (VCHA) when an over-discharged battery is connected with a charger, overdischarge hysteresis is released, and when the battery voltage becomes equal to or higher than the overdischarge detection voltage (VDL), the overdischarge condition is released (the discharging control FET turns on). This action is called charger detection. (The charge time can be reduced via the internal parasitic diode in the discharging control FET by using this charger detection.) If the VM pin voltage has not reached the charger detection voltage (VCHA), when an overdischarged battery is connected to the charger, the overdischarge condition is released (discharge control FET turns on) as designed, when the battery voltage reaches the overdischarge release voltage (VDU) or higher. Abnormal charge current detection If the VM pin voltage falls below the charger detection voltage (VCHA) during charging under normal condition and it continues for the overcharge detection delay time (tCU) or longer, the charging control FET turns off and charging stops. This action is called abnormal charge current detection. Abnormal charge current detection works if the discharging control FET turns on (DO pin voltage is "H") and the VM pin voltage falls below the charger detection voltage (VCHA). Consequently, if an abnormal charge current flows to an over-discharged battery, the charging control FET turns off and charging stops after the battery voltage becomes the overdischarge detection voltage or higher (DO pin voltage becomes "H") and the overcharge detection delay time (tCU) elapses. Abnormal charge current detection is released when the voltage difference between VM pin and VSS pin becomes less than charger detection voltage (VCHA) by separating the charger. Since the 0V battery charging function has higher priority than the abnormal charge current detection function, abnormal charge current may not be detected while the battery voltage is low for product with the 0V battery charging function. Delay circuits The following detection delay times are generated by dividing the about 2 kHz clock with a counter. [Ex.] Overcharge detection delay time (= abnormal charge current detection delay time): 1.0s Overdischarge detection delay time: 125 ms Overcurrent 1 detection delay time: 8 ms Overcurrent 2 detection delay time: 2 ms Seiko Instruments Inc. 13 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series Rev.3.2 Note! !" Overcurrent 2 detection delay time starts when overcurrent 1 is detected. Consequently, if overcurrent 2 is detected after overcurrent 2 detection delay time passes after overcurrent 1 detection, the discharging control FET turns off. At this time, overcurrent 2 detection delay time may seem to be increased (or overcurrent 1 detection delay time may seem to be decreased.). VDD DO pin VSS Overcurrent 2 detection delay time (tIOV2) Time VDD VIOV2 VM pin VIOV1 VSS Time Figure 5 !" If an overcurrent condition (overcurrent 1, overcurrent 2 and load short-circuiting) is detected and it continues for the overdischarge detection delay time or longer without releasing a load, the condition changes to the power-down condition when the battery voltage falls below the overdischarge detection voltage. If the battery voltage falls below the overdischarge detection voltage due to an overcurrent, the discharging control FET turns off when the overcurrent is detected. If the battery voltage restores late and the battery voltage after the overdischarge detection delay time is equal to or lower than the overdischarge detection voltage, the condition changes to the power-down condition. 14 Seiko Instruments Inc. Rev.3.2 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series 0V battery charging function (*1) (*2) This function is used to recharge the connected battery after it self-discharges to 0 V. When the 0V battery charging start charger voltage (V0CHA) or higher is applied to between EB+ and EB- pins by connecting the charger, the charging control FET gate is fixed to VDD potential. When the voltage between the gate and source of the charging control FET becomes equal to or higher than the turn-on voltage by the charger voltage, the charging control FET turns on to start charging. At this time, the discharging control FET turns off and the charging current flows through the internal parasitic diode in the discharging control FET. If the battery voltage becomes equal to or higher than the overdischarge release voltage (VDU), the normal condition returns. 0V battery charge inhibiting function (*1) This function is used to inhibit recharge the connected battery if it is short-circuited (0 V) internally. If the battery voltage becomes 0.9 V (typ.) or lower, the charging control FET gate is fixed to EB- potential to inhibit charging. If the battery voltage is the 0V battery charge inhibiting battery voltage (V0INH) or higher, charging can be performed. (*1) Some battery providers do not recommend charge for 0V batteries(complete self-discharged). Please refer to battery providers. (*2) The 0V battery charging function has higher priority than the abnormal charge current detection function. Consequently, a product with the 0V battery charging function can be charged and abnormal charge current cannot be detected when the battery voltage is low (maximum 1.8 V or lower). (*3) When a battery is connected to an IC for the first time, the IC may not enter the normal condition (not dischargeable condition). If this occurs, set the VM pin voltage equal to the VSS voltage (short the VM and VSS pins or connect a charger) to enter the normal condition. Seiko Instruments Inc. 15 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series Rev.3.2 !"Operation Timing Chart 1-1. Overcharge and overdischarge detection (for products with power-down feature) Battery voltage VCU VCL VDU VDL VDD DO p in VS S VDD CO p in VS S VDD VM p in VIO V 1 VS S VCHA Charger connected Load connected O vercharge detection delay time (tCU) O verdischarge detection delay time (tDL) Mode $ % $ & $ Note: $ Norm al m ode, % O vercharge m ode, & O verdischarge m ode, ' O vercurrent m ode The charger is assum ed to charge with a constant current. Figure 6-1 1-2. Overcharge and overdischarge detection (for products without power-down feature) B a tte ry v o lta g e VCU VCL VDU VDL VDD D O p in VSS VDD C O p in VSS VDD V M p in V IO V 1 VSS VCHA C h arg er c o n n e c te d L oad c o n n e c te d O ve rc h a r g e d e te c tio n d e la y tim e (tC U ) O ve rd is c h a r g e d e te c tio n d e la y tim e (tD L ) O ve rd is c h a r g e d e te c tio n d e la y tim e ( tD L ) M ode $ % $ & $ N o te : $ N o r m a l m o d e , % O v e rc h a rg e m o d e , & O v e r d is c h a rg e m o d e , ' O v e r c u rr e n t m o d e T h e c h a rg e r is a s s u m e d t o c h a r g e w ith a c o n s ta n t c u rr e n t . Figure 6-2 16 Seiko Instruments Inc. & $ Rev.3.2 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series Battery v oltage 2. overcurrent detection VCU VCL VDU VDL DO pin VDD VSS VM pin CO pin VDD VSS VDD VSO RT VSHORT VIO V2 VIO V1 VSS C harger connected Load connected O ver current 1 detection delay time (tIO V 1) O ver current 2 detection delay time (tIO V 2) Load s hort-circuiting detection delay tim e (tS O RT ) M ode $ ' $ ' $ ' $ N ote: $ N orm al m ode, % O ver charge m ode, & O ver discharge m ode, ' O ver current m ode The charger is assum ed to charge w ith a constant current. Figure 7 D O p in B a tte ry v o lta g e 3. Charger detection VCU VCL VDU VDL VDD V M p in C O p in VSS VDD VSS VDD VSS VCHA C h arg er c on n ec ted L oad c on n ec ted If V M p in voltag e < V C H A , over d is c h arg e is releas ed at over d is c h arg e d etec tion voltag e (V D L ). O ver d is c h arg e d etec tion d elay tim e (tD L ) M ode $ $ & N ote: $ N o r m a l m o d e , % O v e r c h a r g e m o d e, & O v e r d is c h a rg e m o d e , ' O v e r c u r r en t m o d e T h e c h a rg e r is a s s u m e d to c h a r g e w ith a c o n s ta n t c u r r en t. Figure 8 Seiko Instruments Inc. 17 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series Rev.3.2 B a tte ry v o lta g e 4. Abnormal charge current detection VCU VCL VDU D O p in VDL VDD V M p in C O p in VSS VDD VSS VDD VSS VCHA C h arg er c on n ec ted L oad c on n ec ted O ver d is c h arg e d etec tion d elay tim e (tD L ) A b n orm al c h arg e c u rren t d etec tion d elay tim e (= O verc h arg e d etec tion d elay tim e tC U ) M ode $ & $ % N ote: $ N o r m a l m o d e , % O v e r c h a r g e m o d e, & O v e r d is c h a rg e m o d e , ' O v e r c u r r en t m o d e T h e c h a r g e r is a s s u m e d to c h a rg e w ith a c o n s ta n t c u rr en t. Figure 9 18 Seiko Instruments Inc. $ Rev.3.2 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series !"Battery Protection IC Connection Example EB+ R1 VDD 470* Battery C1 S-8241 Series 0.1%F VSS DO CO VM R2 1k* FET2 FET1 EB& Figure 10 Table 1 Constant Symbol Parts Purpose Recommend min. max. FET1 Nch MOS_FET Charge control ----- ----- ----- FET2 Nch MOS_FET Discharge control ----- ----- ----- R1 Resistor For ESD For power fluctuation 470* 300* The same value as the R2 C1 Capacitor For power fluctuation 0.1%F 0.01%F 1.0 %F R2 Resistor Protection at reverse connecting a charger 1K* 300* 1.3K* Remarks *1) 0.4 V . Threshold voltage . overdischarge detection voltage Withstand voltage between gate and source / Charger voltage *1) 0.4 V . Threshold voltage . overdischarge detection voltage Withstand voltage between gate and source / Charger voltage *2) Set resistance so that R1 . R2. *3) Install a capacitor of 0.01 %F or higher between VDD and VSS. *4) To prevent a current from occurring in the event of reverse connection of the charger, set the resistance within the range from 300 * to 1.3k*. *1) If an FET with a threshold voltage of 0.4 V or lower is used, the charging current may not be able to be cut. If an FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may stop before overdischarge is detected. If the withstand voltage between the gate and source is lower than the charger voltage, the FET may be destroyed. *2) If R1 has a higher resistance than R2 and the charger is connected reversely, current flows from the charger to the IC, and the voltage between VDD and VSS may exceed the absolute maximum rating. Install a resistor of 300* or higher as R1 for ESD protection. If R1 has a high resistance, the overcharge detection voltage increases by IC current consumption. *3) If a capacitor of less than 0.01 %F is installed as C1, DO may oscillate when load short-circuiting is detected, a charger is connected reversely, or overcurrent 1 or 2 is detected. Be sure to install a capacitor of 0.01 %F or higher as C1. With some types of batteries, DO oscillation may not stop unless the C1 capacity is increased. Set the C1 capacity by evaluating actual applications. *4) If R2 is set to less than 300"*, a current which is higher than the permissible loss (power dissipation) flows through the IC and it may be damaged when the charger is connected reversely. If a resistor of higher than 1.3k* is installed as R2, the charging current may not be cut when a high-voltage charger is connected. Seiko Instruments Inc. 19 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series Rev.3.2 Note!: The above connection diagram and constants do not guarantee proper operations. Evaluate your actual application and set constants properly. !"Precautions 20 !" Pay attention to the operating conditions for input/output voltage and load current so that the loss of the IC does not exceed the permissible loss (power dissipation) of the package. !" Seiko Instruments Inc. shall not be responsible for any patent infringement by products including the S-8241 Series in connection with the method of using the S-8241 Series in such products, the product specifications or the country of destination thereof. Seiko Instruments Inc. Rev.3.2 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series ! Characteristic (typical characteristic) 1. Detection/release voltage temperature characteristics Overcharge detection voltage vs. temperature Overcharge release voltage vs. temperature 4.33 4.23 4.31 VCU (V) 4.29 VCL (V) 4.19 4.27 4.17 4.25 4.15 4.23 4.13 4.21 -50 -25 0 25 Ta(C) 50 75 100 -50 -25 0 25 50 75 100 Ta(C) Overdischarge detection voltage vs. temperature Overdischarge release voltage vs. temperature 2.40 2.50 2.36 2.46 VDL (V) 2.32 VDU (V) 2.42 2.28 2.38 2.24 2.34 2.20 2.30 -50 -25 0 25 50 75 100 -50 -25 0 Ta(C) Overcurrent 1 detection voltage vs. temperature 0.60 0.105 0.55 VIOV1 (V) 0.100 VIOV2 (V) 0.50 0.095 0.45 0.090 0.40 -25 0 25 50 75 100 Overcurrent 2 detection voltage vs. temperature 0.110 -50 25 Ta(C) 50 75 100 -50 -25 0 Ta(C) 25 50 75 100 75 100 Ta(C) 2. Current consumption temperature characteristics Current consumption vs. Temperature in normal mode 6 0.10 5 0.08 4 IPDN (%A) 0.06 IOPE (%A) 3 Current consumption vs. Temperature in power-down mode 0.04 2 1 0.02 0 0.00 -50 -25 0 25 50 75 100 -50 Ta(C) -25 0 25 50 Ta(C) Seiko Instruments Inc. 21 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series Rev.3.2 3. Current comsumption Power voltage characteristics (Ta=25C) Current consumption - power supply volatge dependency VM=VSS 20 15 IOPE (%A) 10 5 0 0 2 4 6 8 10 VDD(V) 4. Detection/release delay time temperature characteristics Overcharge detection delay time vs. temperature 2.0 Overcharge release delay time vs. temperature 1.0 0.8 1.5 tCL 0.6 (ms) tCU (s) 1.0 0.4 0.5 0.2 0.0 0.0 -50 -25 0 25 50 75 100 -50 -25 0 Ta(C) Overdischarge detection delay time vs. temperature 250 50 75 100 Overdischarge release delay time vs. temperature 2.0 1.8 1.6 1.4 tDU 1.2 (%s) 1.0 0.8 0.6 0.4 0.2 0.0 200 tDL 150 (ms) 100 50 0 -50 -25 0 25 50 75 100 -50 Ta(C) -25 0 25 50 75 100 Ta(C) Overcurrent 1 release delay time vs. temperature Overcurrent 1 detection delay time vs. temperature 16 500 12 tIOV1 (%s) 300 400 tIOV1 (ms) 8 Release 200 4 100 0 0 -50 -25 0 25 50 75 100 -50 Ta(C) 22 25 Ta(C) Seiko Instruments Inc. -25 0 25 Ta(C) 50 75 100 Rev.3.2 BATTERY PROTECTION IC FOR A SINGLE-CELL PACK S-8241 Series Overcurrent 2 detection delay time vs. temperature Load short-circuiting delay time vs. temperature 50 4 40 3 tSHORT (%s) 30 tIOV2 (ms) 2 20 1 10 0 0 -50 -25 0 25 50 75 -50 100 -25 0 25 50 75 100 Ta(C) Ta(C) 5. Delay time power-voltage characteristics(Ta=25C) Overcurrent 1 detection delay time vs. power supply voltage dependency 16 Overcurrent 2 detection delay time vs. power supply voltage dependency 4 12 3 tIOV1 (ms) 8 tIOV2 (ms) 2 4 1 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 VDD(V) 3.5 4.0 4.5 5.0 VDD(V) 6. CO pin/DO pin output current characteristics(Ta=25C) CO pin source current characteristics CO pin sink current characteristics VDD=3.5V,VSS=VM=0V -1.4 -1.2 VDD=4.5V,VSS=VM=0V 12 10 -1.0 8 ICO (%A) 6 ICO -0.8 (mA)-0.6 4 -0.4 -0.2 2 0.0 0 0 1 2 3 0 4 1 2 DO pin source current characteristics VDD=3.5V,VSS=VM=0V -1.8 -1.6 -1.4 -1.2 IDO -1.0 (mA)-0.8 -0.6 -0.4 -0.2 0.0 3 4 5 VCO(V) VCO(V) DO pin sink current characteristics VDD=1.8V,VSS=VM=0V 2.5 2.0 IDO 1.5 (mA) 1.0 0.5 0.0 0 1 2 3 4 0.0 VDO(V) 0.5 1.0 1.5 2.0 VDO(V) Seiko Instruments Inc. 23 MP005-A 991105 n SOT-23-5 Unit mm lDimensions 2.90.2 1.90.2 5 0.45 4 1.6 1 +0.2 2.8 -0.3 0.16 3 2 +0.1 -0.06 1.10.1 1.3max 0.950.1 0.40.1 No.:MP005-A-P-SD-1.0 lTaping Specifications lReel Specifications 4.00.1 (10 pitches:40.00.2) 2.00.05 o1.5 +0.1 -0 0.270.05 1.750.1 3000 pcs./reel 12.5max. 3.50.05 8.00.2 3max. o1.0 +0.1 -0 3max. 3.250.15 4.00.1 1.40.2 +1 o60 -0 +0 o180 -3 3.250.15 T2 9.00.3 Winding core 210.5 o130.2 20.2 (60) (60) Feed direction No.:MP005-A-R-SD-1.0 No.:MP005-A-C-SD-1.0 PN005-A 000314 n SON5 (2017) Unit:mm lDimensions 5 4 1 3 2 +0.10 -0.05 No lTaping Specifications PN005-A-P-SD-1.0 lReel Specifications 1 reel holds 3000 ICs. 11.41.0 o1.55 +0.1 -0.05 2.00.1 4.00.1 1.750.1 3.50.1 0.20.05 o180.0 +0 -3 8.00.2 2.4 2.20.1 o60.0 +1 -0 4.00.1 o1.050.1 1.1 2.25 EIAJRRM08B 2.050.1 9.00.3 No. PN005-A-C-SD-1.0 Center expand o210.5 o13.00.2 No. PN005-A-R-SD-1.0 * * * * * * The information described herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. When the products described herein are regulated products subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.