MBR1550CT thru MBR1560CT
Symbol Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=125 C
IFSM
Maximum Ratings
15
150
A
A
Unit
o
IRMaximum DC Reverse Current
At Rated DC Blocking Voltage @TJ=25 C
@TJ=125 C
CJTypical Junction Capacitance Per Element (Note 3)
TJOperating Temperature Range
1.0
50
3.0
400
-55 to +150
-55 to +175
mA
pF
o
o
Typical Thermal Resistance (Note 2)ROJC C/W
o
C
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR) 10000 V/us
C
o
TSTG Storage Temperature Range
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
Maximum Forward
Voltage (Note 1)
IF=7.5A @TJ=125 C
IF=15A @TJ=25 C
IF=15A @TJ=125 C
VF0.65
0.90
0.80 V
o
o
o
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Dimensions TO-220AB
A=Anode, C=Cathode, TAB=Cathode
A
A
C
C(TAB)
A C A
MBR1550CT
MBR1560CT
VRRM
V
50
60
VRMS
V
35
42
VDC
V
50
60
MBR1550CT thru MBR1560CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
PERCENT OF RATE D PEAK REVERSE VOLTAGE (%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.001
0.1
1.0
100
10
60 80 100
TJ= 125 C
0.01
TJ= 25 C
TJ= 75 C
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTI CS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1 1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
TJ= 25 C
FIG.5 - TY PICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10
1100
10000
1000
100 0.1 4
TJ= 25 C, f= 1MHz
FIG.2 - MAXIMUM NON-REPETI TIVE SURGE CURRENT
NUM BER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 100
220
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAG E F ORWARD CURRE NT
AM PERES
25
75 100 125 150
050
15
175
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
10
0
5
RESISTIVE OR
INDUCTIVE LOAD
CASE TEMPERATURE , C
