THYRISTOR MODULE P D T 1 0 0 8 100A / 800V P D H 1 0 0 8 FEATURES OUTLINE DRAWING * Isolated Base * Dual Thyristors or Thyristor and Diode Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS PDT * Rectified For General Use PDH Maximum Ratings Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Approx Net Weight:155g Symbol Conditions Average Rectified Output Current IO(AV) RMS On-State Current IT(RMS) I Squared t ITSM I2t Critical Rate of Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Value per 1 Arm PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor Unit 800 960 800 960 VDRM VDSM VRRM VRSM Parameter Surge On-State Current Grade PDT/PDH1008 50Hz Half Sine Wave condition Tc=82C 50 Hz Half Sine Wave,1Pulse, Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125C IG=200mA, diG/dt=0.2A/s * V V Max Rated Value Unit 100 A 156 A 2000 A 20000 A2s 100 A/s 5 W 1 W 2 A 10 V 5 V -40 to +125 C -40 to +125 C Base Plate to Terminals, AC1min 2000 V M5 Screw 2.4 to 2.8 N *m M5 Screw 2.4 to 2.8 Electrical * Thermal Characteristics Characteristics VDM= VDRM, Tj= 125C VRM= VRRM, Tj= 125C ITM= 300A, Tj=25C Tj=-40C VD=6V,IT=1A Tj=25C Tj=125C Tj=-40C VD=6V,IT=1A Tj=25C Tj=125C VD=2/3VDRM Tj=125C Maximum Value. Min. Typ. Max. 20 20 1.38 200 100 50 4 2.5 2 0.25 dv/dt VD=2/3VDRM Tj=125C 500 tq ITM=IO,VD=2/3VDRM dv/dt=20V/s, VR=100V -di/dt=20A/s, Tj=125C Symbol Peak Off-State Current Peak Reverse Current Peak Forward Voltage IDM IRM VTM Gate Current to Trigger IGT Gate Voltage to Trigger VGT Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage VGD Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance Value Per 1Arm tgt td tr IL IH Rth(j-c) Test Conditions VD=2/3VDRM Tj=125C IG=200mA, diG/dt=0.2A/s Tj=25C Tj=25C Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound Unit mA mA V mA V V V/s 100 s 6 2 4 100 50 s s s mA 0.3 0.2 C/W PDT/PDH1008 OUTLINE DRAWING (Dimensions in mm) PDT PDH