Features
1 of 9
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
SGC4263Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
RFMD’s SGC4263Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC4263Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC4263Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Gain, RL and NF versus Frequency
-30
-20
-10
0
10
20
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
dB
Gain
IRL
ORL
S11
Bias Tee Dat a, ZS = ZL = 50 Ohm s, TL
Single Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P1dB=15.1dBm at 1950MHz
OIP3=30dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
DS111011
Package: SOT-363
SGC4263Z
50MHz to
4000MHz
Active Bias Sili-
con Germa-
nium
Cascadable
Gain Block
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain, (G) 15.0 dB 500MHz
13.2 14.7 16.2 dB *850MHz
12.6 14.0 15.4 dB 1950MHz
Output Power at 1dB Compression
(P1dB) 15.2 dBm 500MHz
15.1 dBm 850MHz
13.6 15.1 dBm 1950MHz
Output Third Order Intercept Point
(OIP3) 32.0 dBm 500MHz
30.5 dBm 850MHz
27.0 30.0 dBm 1950MHz
Input Return Loss, (IRL) 17.0 23.5 dB 1950MHz
Output Return Loss, (ORL) 17.0 21.0 dB 1950MHz
Noise Figure (NF) 3.3 4.5 dB 1930MHz
Device Operating Voltage, (VD)3.0V
Device Operating Current, (ID)475563mA
Thermal Resistance 130 °C/W (Junction - Lead) (Rth, j-l)
Test Conditions: VD=3V, ID=55mA Typ., TL=25°C, OIP3 Tone Spacing=1MHz. *Bias Tee Data, ZS=ZL=50POUT per tone=0dBm, Application Circuit
Data Unless Otherwise Noted