APT30M17JLL 300V 135A 0.017W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP (R) D * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package MAXIMUM RATINGS S S G S All Ratings: TC = 25C unless otherwise specified. APT30M17JLL Parameter UNIT L A C I N H C N E T O I E T C MA N A OR V AD INF 300 Drain-Source Voltage Volts 135 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 690 Watts Linear Derating Factor 5.52 W/C VGSM PD TJ,TSTG 540 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 135 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, I D = 250A) 300 Volts 135 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.017 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 500 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) UNIT Ohms A 100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-7157 Rev - 11-2001 Symbol DYNAMIC CHARACTERISTICS Symbol APT30M17JLL Characteristic MIN Test Conditions TYP Ciss Input Capacitance VGS = 0V 14240 Coss Output Capacitance VDS = 25V 3400 Reverse Transfer Capacitance f = 1 MHz 161 Crss Qg Qgs Total Gate Charge 3 td(on) Turn-on Delay Time tf 72 ID = ID[Cont.] @ 25C 102 VGS = 15V 19 L A C I N H C N E T O I E T C MA N A OR V AD INF Gate-Drain ("Miller") Charge td(off) 266 Gate-Source Charge Qgd tr VGS = 10V VDD = 0.5 VDSS VDD = 0.5 VDSS 31 ID = ID[Cont.] @ 25C 44 RG = 0.6W 13 Rise Time Turn-off Delay Time Fall Time MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS MIN Characteristic / Test Conditions TYP Continuous Source Current (Body Diode) MAX 135 ISM Pulsed Source Current 1 (Body Diode) 540 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) 620 Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) 14.0 dv/ dt Peak Diode Recovery dv/dt 5 UNIT Amps Volts ns C 5 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic RqJC Junction to Case RqJA Junction to Ambient MIN TYP 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 0.40mH, R = 25W, Peak I = 135A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS TJ 150C APT Reserves the right to change, without notice, the specifications and information contained herein. SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) 050-7157 Rev - 11-2001 r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) * Source Drain 30.1 (1.185) 30.3 (1.193) * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 C/W 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058