PDTC323TK,115 - NXP - Pdf.Support

1. Product profile

1.1 General description

500 mA NPN Resistor-Equipped Transistor (RET) in a small SOT346 (SC-59A) SMD

plastic package.

PNP complement: PDTA323TK.

1.2 Features

1.3 Applications

1.4 Quick reference data

PDTC323TK

NPN 500 mA, 15 V resistor-equipped transistor;

R1 = 2.2 kΩ, R2 = open

Rev. 02 — 16 November 2009 Product data sheet

Built-in bias resistors Reduces component count

Simplifies circuit design Reduces pick and place costs

500 mA output current capability

Digital application in automotive and

industrial segments

Cost saving alternative for BC817 series

in digital applications

Controlling IC inputs Switching loads

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 15 V

IOoutput current - - 500 mA

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ

Product data sheet Rev. 02 — 16 November 2009 2 of 8

NXP Semiconductors PDTC323TK

NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Table 2. Pinning

Pin Description Simplified outline Symbol

1 input (base)

2 GND (emitter)

3 output (collector)

sym012

Table 3. Ordering i nformation

Type number Package

Name Description Version

PDTC323TK SC-59A plastic surface mounted package; 3 leads SOT346

Table 4. Marking codes

Type number Marking code

PDTC323TK 57

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 30 V

VCEO collector-emitter voltage open base - 15 V

VEBO emitter-base voltage open collector - 5 V

VIinput voltage

positive - +12 V

negative - −5V

IOoutput current - 500 mA

Ptot total power dissipation Tamb ≤25 °C[1] -250mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Product data sheet Rev. 02 — 16 November 2009 3 of 8

NXP Semiconductors PDTC323TK

NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7. Characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] --500K/W

Table 7. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off

current VCB =30V; I

E= 0 A - - 100 nA

ICEO collector-emitter

cut-off current VCE =15V; I

B=0A - - 0.5 μA

IEBO emitter-base cut-off

current VEB =5V; I

C= 0 A - - 100 nA

hFE DC current gain VCE =5V; I

C= 50 mA 100 300 -

VCEsat collector-emitter

saturation voltage IC=50mA; I

B=2.5mA - 25 80 V

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ

Cccollector capacitance VCB =10V; I

E=i

e=0A;

f=1MHz -7-pF

Product data sheet Rev. 02 — 16 November 2009 4 of 8

NXP Semiconductors PDTC323TK

NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open

VCE =5V

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−40 °C

Fig 1. DC current gain as a function of collector

current; typical values Fig 2. Collector- em itter satura tio n voltage as a

function of collector current; typical values

006aaa447

IC (mA)

10−1103

102

110

103

hFE

102

(1)

(2)

(3)

006aaa448

IC (mA)

10−1102

101

10−1

VCEsat

(V)

10−2

(1)

(2)

(3)

Product data sheet Rev. 02 — 16 November 2009 5 of 8

NXP Semiconductors PDTC323TK

NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open

8. Package outline

9. Packing information

[1] For further information and the availability of packing methods, see Section 12.

Fig 3. Package outline SOT346 (SC-59A/TO-236)

04-11-11Dimensions in mm

3.0

2.5

1.7

1.3

0.26

0.10

1.9

0.50

0.35

1.3

1.0

3.1

2.7

0.6

0.2

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 10000

PDTC323TK SOT346 4 mm pitch, 8 mm tape and reel -115 -135

Product data sheet Rev. 02 — 16 November 2009 6 of 8

NXP Semiconductors PDTC323TK

NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open

10. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PDTC323TK_2 20091116 Product data sheet - PDTC323TK_1

Modifications: •This data sheet was changed to reflec t the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical

content.

PDTC323TK_1 20050603 Product data sheet - -

Product data sheet Rev. 02 — 16 November 2009 7 of 8

NXP Semiconductors PDTC323TK

NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warrant ies as to t he accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short dat a sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conf lict with the short data sheet, the

full data sheet shall pre va il.

11.3 Disclaimers

General — In formation in this document is believed to be accurate and

reliable. However, NXP Semiconductors does no t give any repr esenta tions or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descripti ons, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or application s and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ra tings System of IEC 60134) may cause permane nt

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercia l sale, as published

at http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Not hing in this document may be interpret ed or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respective ow ners.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objecti ve specification for product development .

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.

Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors PDTC323TK

NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of rele ase: 16 November 2009

Document identifier: PDTC323TK_2

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Packing information . . . . . . . . . . . . . . . . . . . . . 5

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 7

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

12 Contact information. . . . . . . . . . . . . . . . . . . . . . 7

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8