T4-LDS-0231-1, Rev. 1 (111902) ©2011 Microsemi Corporation Page 1 of 5
1N5415US thru 1N5420US
Available on
commercial
versions
VOIDLESS-HERME TICALLY SEALED S URFACE
MOUNT FAST RECOVERY GLASS RECTIFIE RS
Qualified per MIL-PRF-19500/411
Qualified Levels:
JAN, JANT X, J AN TXV
and JA N S
DESCRIPTION
This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications
where a failure cannot be tolerated. These i ndustry-recognized 3.0 amp rated rectifiers for working peak
reverse vol tages from 50 to 600 volts are hermetically sealed with voi dless-glass construction usi ng an
internal “Category 1” metallurgical bond. These devices are also available in axial-leaded pack ages for
thru-hole mounting. Microsemi also offers numerous other rectifier products to meet higher and lower
current ratings with various recovery time speed requirem ents including fast and ultrafast device types in
both through-hole and surface mount pa cka ges.
“B” SQ-MELF
(D-5B) Package
Also available in:
“B” Package
(axial-leaded)
1N5415 – 1N5420
Important: For the latest infor mation, visit our web site http://www.microsemi.com.
FEATURES
• Sur face mount equiv alent of JEDE C registered 1N5415 thru 1N5420 series.
• Voidless hermetically sealed glass package.
• Quadruple-layer passivation.
• Internal “Category 1” metallurgical bonds.
• Working peak reverse voltage 50 to 600 volts.
• JAN, JANTX, JANTXV and JANS qualifications available per MIL-PRF-19500/411.
• RoHS compliant versions available (commercial grade only).
APPL ICAT IONS / BENEFITS
• Fast recovery 3 amp 50 to 600 vol t rectifiers.
• Military and other high-reliability applications.
• General recti fier applications including bridges, half-bridges, catch diodes, etc.
• High forward surge current capability.
• Extremely robust construction.
• Low thermal resistance.
• Controlled avalanche with peak reverse power capability.
• Inherently radiation hard as desc ribed in Microsemi “Micr oNote 050 ”.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resistance Junction-to-End Cap
RӨJEC
6.5
oC/W
Forward Surge Current @ 8.3 ms half-sine
IFSM
80
A
Average Rectified Forward Current
(3)
@ T A = +55
o
C
@ T A = +100
o
C
IO
( 1, 2)
IO (2) 3
2 A
Working Peak Reverse Vol tage 1N5415US
1N5416US
1N5417US
1N5418US
1N5419US
1N5420US
VRWM
50
100
200
400
500
600
V
Maximum Reverse Recovery Time (5) 1N5415US
1N5416US
1N5417US
1N5418US
1N5419US
1N5420US
trr
150
150
150
150
250
400
ns
Solder Temperature @ 10 s
TSP
260
oC
S ee n ot es on ne xt page.
T4-LDS-0231-1, Rev. 1 (111902) ©2011 Microsemi Corporation Page 2 of 5
1N5415US thru 1N5420US
MAXIMUM RATINGS
Notes: 1. De rat e li ne ar ly at 2 2 mA/oC for 55 oC < TA < 100 oC.
2. Above TA = 100 oC, derate linearl y at 26.7 mA/oC to zero at TA = 175 oC.
3. These ambient ratings are for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max)
does not exceed 175 oC.
• CASE: Hermetically seal ed voidless hard glass with tung sten slug s.
• TERMINALS: End c aps are copper with tin/lead (Sn/Pb) finish. Note: Previous inventory had solid silver with tin/lead (Sn/Pb)
finish. RoHS compliant matte-tin is av ailable for co mmercia l grade only.
• MARKING: Cathode band only.
• POLARITY: Cathode indicated by band.
• TAPE & REEL option: Standard per EIA-481-B. Contact factory for quantities.
• WEIGHT: 539 milligrams.
• See Package Dimensions and recommended Pad Layout on last page.
JAN 1N5415 US (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
JEDEC type number
See Electrical Characteristics
table
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
MELF Package
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specifi ed current.
VRWM
Working Peak Reverse Vol tage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B).
IO
Average Rectified Output Current: The Output Current averaged o ver a full cycl e with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Reverse Current: The maxim um reverse (leakage) current that will flow at the specified voltage and
temperature.
trr
Reverse Recovery Ti me: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
T4-LDS-0231-1, Rev. 1 (111902) ©2011 Microsemi Corporation Page 3 of 5
1N5415US thru 1N5420US
TYPE
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50
µ
A
Volts
FORWARD
VOLTAGE
VF @ 9 A
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
CAPACITANCE
C
VR @ 4 V
pF
MIN.
Volts
MAX.
Volts
25 oC
µA
100 oC
µA
1N5415US
1N5416US
1N5417US
1N5418US
1N5419US
1N5420US
55
110
220
440
550
660
0.6
0.6
0.6
0.6
0.6
0.6
1.5
1.5
1.5
1.5
1.5
1.5
1.0
1.0
1.0
1.0
1.0
1.0
20
20
20
20
20
20
550
430
250
165
140
120
NOTE 1: IF = 0.5 A, IRM = 1 A, IR(REC) = 0.250 A.
T4-LDS-0231-1, Rev. 1 (111902) ©2011 Microsemi Corporation Page 4 of 5
1N5415US thru 1N5420US
% PIV H eating Tim e ( sec)
FIGURE 1 FIGURE 2
Typical Reverse C urrent vs. P IV Max i mum Th er mal Impedanc e
VF – Voltage (V)
FIGURE 3
Typical For ward Cur r ent vs. Forward Voltage
I
F
– Current (µA)
Z
ӨJX
(oC/Watt)
I
F
– Current (A)
T4-LDS-0231-1, Rev. 1 (111902) ©2011 Microsemi Corporation Page 5 of 5
1N5415US thru 1N5420US
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. Dimensions are pre-solder dip.
4. Minimum clearance of glass body to mounting surface on all orientations.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
6. This package outline has also previously been identified as “D-5B”.
INCH MILLIMETERS
MIN
MAX
MIN
MAX
BL 0.200 0.225 5.08 5.72
BD 0.137 0.148 3.48 3.76
ECT 0.019 0.028 0.48 0.71
S 0.003 --- 0.08 ---
INCH
MILLIMETERS
A
0.288 7.32
B
0.070
1.78
C
0.155
3.94
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diamet er contact may be
placed in the center between the pads
as an optional spot for c ement .