Discrete POWER & Signal Technologies SES A CaS T CARS ne SOT-223 PNP Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. Absolute Maxi mum Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units Voeo Collector-Emitter Voltage 60 Vv Voso Collector-Base Voltage 80 Vv VeBo Emitter-Base Voltage 5.0 Vv Io Collector Current - Continuous 4.0 A Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units *NZT751 Pp Total Device Dissipation 12 WwW Derate above 25C 97 mw/C Resa Thermal Resistance, Junction to Ambient 103 C/W Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 om?, 1997 Fairchild Semiconductor Corporation LSZLZNElectrical Characteristics PNP Current Driver Transistor (continued) TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Visriceo Collector-Emitter Sustaining Voltage lo = 10 mA, Ip = 0 60 Vv Visricso Collector-Base Breakdown Voltage lo = 100 HA, Ie = 0 80 Vv Visr)eB0 Emitter-Base Breakdown Voltage le=10uA, Io =0 5.0 Vv loBo Collector-Cutoff Current Vop = 80 V, Ie =0 100 nA leBo Emitter-Cutoff Current Vep=4.0V, Ilo =0 0.1 HA ON CHARACTERISTICS* Hre DC Current Gain lo = 50 mA, Voge = 2.0 V 75 le = 500 mA, Vce = 2.0 V 75 lo=1.0A, Vee = 2.0 V 75 Ilc=2.0A, Vce= 2.0 V 40 Veesat) Collector-Emitter Saturation Voltage lo= 1.0 A, Ip = 100 mA 0.3 Vv lc=2.0A, lp =200 mA 0.5 Vv Veeisaty Base-Emitter Saturation Voltage lo=1.0A, lg = 100 mA 1.2 Vv Vee(on Base-Emitter On Voltage Ic=1.0A, Voge = 2.0 V 1.0 Vv SMALL SIGNAL CHARACTERISTICS f Current Gain - Bandwidth Product lo = 50 mA, Voge = 5.0 V, 75 MHz f= 100 MHz *Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0% DC Typical Characteristics Typical Pulsed Current Gain vs Collector Current Vog = 5V 140 120 100 0.01 0.1 1 I - COLLECTOR CURRENT (A) here - TYPICAL PULSED CURRENT GAIN oO 9 2S 2 2 yb O BR TD OD 10 Voegar> COLLECTOR-EMITTER VOLTAGE (V) Collector-Emitter Saturation Voltage vs Collector Current B =10 1 Ic - COLLECTOR CURRENT (A) LSZLZNPNP Current Driver Transistor (continued) DC Typical Characteristics (continuea) Base-Emitter Saturation Voltage vs Collector Current ND a Vaesar BASE-EMITT ER VOLTAGE (V) O a 2 1 I c - COLLECTOR CURRENT (A) Base-Emitter ON Voltage vs Collector Current oO o 2 A OD Vog= 5V 9 i) Vee(onj BASE-EMITTER ON VOLTAGE (V) ford 1 10 I, - COLLECTOR CURRENT (A) Collector-Cutoff Current vs Ambient Temperature ao Q oO Vog= 50V Q oO Iggor COLLECTOR CURRENT (nA) _ 3S nN a 50 75 100 125 150 Ta - AMBIENT TEMPERATURE (C) AC Typical Characteristics POWER DISSIPATION vs AMBIENT TEMPERATURE P p- POWER DISSIPATION (W) o o o o = yb KR OD & = WN Qo 0 25 50 TEMPERATURE (%) 75 100 125 150 LSZLZN