TPN13008NH
1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN13008NH
TPN13008NH
TPN13008NH
TPN13008NH
Start of commercial production
2012-08
1.
1.
1.
1. Applications
Applications
Applications
Applications
• DC-DC Converters
• Switching Voltage Regulators
• Motor Drivers
2.
2.
2.
2. Features
Features
Features
Features
(1) Small, thin package
(2) High-speed switching
(3) Small gate charge: QSW = 6.7 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 10.8 mΩ (typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)
(6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
TSON Advance
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
2019-10-30
Rev.3.0
©2019
Toshiba Electronic Devices & Storage Corporation
TPN13008NH
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Power dissipation
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(Silicon limit)
(Tc = 25 )
(t = 1 ms)
(Tc = 25 )
(t = 10 s)
(t = 10 s)
(Note 1), (Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 4)
(Note 5)
Symbol
VDSS
VGSS
ID
ID
IDP
PD
PD
PD
EAS
IAR
Tch
Tstg
Rating
80
±20
40
18
98
42
1.9
0.7
114
18
150
-55 to 150
Unit
V
V
A
A
W
W
W
mJ
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5.
5.
5.
5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Channel-to-ambient thermal resistance
(Tc = 25 )
(t = 10 s)
(t = 10 s)
(Note 3)
(Note 4)
Symbol
Rth(ch-c)
Rth(ch-a)
Rth(ch-a)
Max
2.97
65.7
178
Unit
/W
/W
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Limited by silicon chip capability.
Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 5: VDD = 60 V, Tch = 25 (initial), L = 0.3 mH, RG = 1.0 Ω, IAR = 18 A
Fig.
Fig.
Fig.
Fig. 5.1
5.1
5.1
5.1 Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Board (a)
Board (a)
Board (a)
Board (a)
Fig.
Fig.
Fig.
Fig. 5.2
5.2
5.2
5.2 Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Board (b)
Board (b)
Board (b)
Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2019-10-30
Rev.3.0
©2019
Toshiba Electronic Devices & Storage Corporation
TPN13008NH
3
6.
6.
6.
6. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
IGSS
IDSS
V(BR)DSS
V(BR)DSX
Vth
RDS(ON)
Test Condition
VGS = ±20 V, VDS = 0 V
VDS = 80 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = -20 V
VDS = 10 V, ID = 0.2 mA
VGS = 10 V, ID = 9 A
Min
80
60
2.0
Typ.
10.8
Max
±0.1
10
4.0
13.3
Unit
µA
V
mΩ
6.2.
6.2.
6.2.
6.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Ciss
Crss
Coss
rg
tr
ton
tf
toff
Test Condition
VDS = 40 V, VGS = 0 V, f = 1 MHz
See Fig. 6.2.1
Min
Typ.
1230
20
290
0.9
4.5
14
5.0
18
Max
1600
50
1.4
Unit
pF
Ω
ns
Fig.
Fig.
Fig.
Fig. 6.2.1
6.2.1
6.2.1
6.2.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
6.3.
6.3.
6.3.
6.3. Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Gate switch charge
Symbol
Qg
Qgs1
Qgd
QSW
Test Condition
VDD ≈ 40 V, VGS = 10 V, ID = 18 A
Min
Typ.
18
6.5
4.0
6.7
Max
Unit
nC
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (Ta
a
a
a = 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Reverse drain current (pulsed)
Diode forward voltage
(Note 6)
Symbol
IDRP
VDSF
Test Condition
IDR = 18 A, VGS = 0 V
Min
Typ.
Max
98
-1.2
Unit
A
V
Note 6: Ensure that the channel temperature does not exceed 150 .
2019-10-30
Rev.3.0
©2019
Toshiba Electronic Devices & Storage Corporation
TPN13008NH
4
7.
7.
7.
7. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 Marking
Marking
Marking
Marking
2019-10-30
Rev.3.0
©2019
Toshiba Electronic Devices & Storage Corporation
TPN13008NH
5
8.
8.
8.
8. Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Characteristics Curves (Note)
Fig.
Fig.
Fig.
Fig. 8.1
8.1
8.1
8.1 I
I
I
ID
D
D
D - V
- V
- V
- VDS
DS
DS
DS Fig.
Fig.
Fig.
Fig. 8.2
8.2
8.2
8.2 I
I
I
ID
D
D
D - V
- V
- V
- VDS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.3
8.3
8.3
8.3 I
I
I
ID
D
D
D - V
- V
- V
- VGS
GS
GS
GS Fig.
Fig.
Fig.
Fig. 8.4
8.4
8.4
8.4 V
V
V
VDS
DS
DS
DS - V
- V
- V
- VGS
GS
GS
GS
Fig.
Fig.
Fig.
Fig. 8.5
8.5
8.5
8.5 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - I
- I
- I
- ID
D
D
DFig.
Fig.
Fig.
Fig. 8.6
8.6
8.6
8.6 R
R
R
RDS(ON)
DS(ON)
DS(ON)
DS(ON) - T
- T
- T
- Ta
a
a
a
2019-10-30
Rev.3.0
©2019
Toshiba Electronic Devices & Storage Corporation
TPN13008NH
6
Fig.
Fig.
Fig.
Fig. 8.7
8.7
8.7
8.7 I
I
I
IDR
DR
DR
DR - V
- V
- V
- VDS
DS
DS
DS Fig.
Fig.
Fig.
Fig. 8.8
8.8
8.8
8.8 Capacitance - V
Capacitance - V
Capacitance - V
Capacitance - VDS
DS
DS
DS
Fig.
Fig.
Fig.
Fig. 8.9
8.9
8.9
8.9 V
V
V
Vth
th
th
th - T
- T
- T
- Ta
a
a
aFig.
Fig.
Fig.
Fig. 8.10
8.10
8.10
8.10 Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Dynamic Input/Output Characteristics
Fig.
Fig.
Fig.
Fig. 8.11
8.11
8.11
8.11 P
P
P
PD
D
D
D - T
- T
- T
- Ta
a
a
a
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
Fig.
Fig.
Fig.
Fig. 8.12
8.12
8.12
8.12 P
P
P
PD
D
D
D - T
- T
- T
- Tc
c
c
c
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
2019-10-30
Rev.3.0
©2019
Toshiba Electronic Devices & Storage Corporation
TPN13008NH
7
Fig.
Fig.
Fig.
Fig. 8.13
8.13
8.13
8.13 r
r
r
rth
th
th
th - t
- t
- t
- tw
w
w
w
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
Fig.
Fig.
Fig.
Fig. 8.14
8.14
8.14
8.14 Safe Operating Area
Safe Operating Area
Safe Operating Area
Safe Operating Area
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
(Guaranteed Maximum)
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
2019-10-30
Rev.3.0
©2019
Toshiba Electronic Devices & Storage Corporation
TPN13008NH
8
Package Dimensions
Package Dimensions
Package Dimensions
Package Dimensions
Unit: mm
Weight: 0.029 g (typ.)
Package Name(s)
TOSHIBA: 2-3X1S
Nickname: TSON Advance
2019-10-30
Rev.3.0
©2019
Toshiba Electronic Devices & Storage Corporation
TPN13008NH
9
https://toshiba.semicon-storage.com/
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RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
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AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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2019-10-30
Rev.3.0
©2019
Toshiba Electronic Devices & Storage Corporation